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  • TN2640N3-G

TN2640N3-G

MOSFET N-CH 400V 0.22A TO92-3


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-TN2640N3-G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 209
  • Description: MOSFET N-CH 400V 0.22A TO92-3 (Kg)

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Details

Tags

Parameters
Power Dissipation 740mW
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 25V
Current - Continuous Drain (Id) @ 25°C 220mA Tj
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 220mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.22A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 400V
Factory Lead Time 2 Weeks
Mount Through Hole
Height 5.33mm
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Length 5.21mm
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Width 4.19mm
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Radiation Hardening No
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 740mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet