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TP0101K-T1-E3

MOSFET P-CH 20V 0.58A SOT23-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-TP0101K-T1-E3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 990
  • Description: MOSFET P-CH 20V 0.58A SOT23-3 (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Packaging Cut Tape (CT)
Published 2014
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 650mOhm
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Max Power Dissipation 350mW
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 580mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 50μA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) -580mA
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.58A
Drain to Source Breakdown Voltage -20V
Nominal Vgs -700 mV
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet