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TP2510N8-G

Trans MOSFET P-CH 100V 0.48A 4-Pin(3+Tab) SOT-89


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-TP2510N8-G
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 296
  • Description: Trans MOSFET P-CH 100V 0.48A 4-Pin(3+Tab) SOT-89 (Kg)

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Details

Tags

Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PSSO-F3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5 Ω @ 750mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Current - Continuous Drain (Id) @ 25°C 480mA Tj
Rise Time 15ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 480mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 2.5A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 52.786812mg
See Relate Datesheet