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  • TPS1101D

TPS1101D

Transistor MOSFET P-CH 15V 2.3A 8-Pin SOIC Tube


  • Manufacturer:
  • Origchip NO: 815-TPS1101D
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 732
  • Description: Transistor MOSFET P-CH 15V 2.3A 8-Pin SOIC Tube (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory Other Transistors
Voltage - Rated DC -15V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2.3A
Base Part Number TPS1101
Pin Count 8
Output Voltage -15V
Number of Elements 1
Power Dissipation-Max 791mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 791mW
Output Current 2.3A
Case Connection ISOLATED
Turn On Delay Time 6.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 11.25nC @ 10V
Rise Time 5.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.7V 10V
Vgs (Max) +2V, -15V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) -2.3A
Gate to Source Voltage (Vgs) 2V
Drain to Source Breakdown Voltage 15V
Nominal Vgs -1.25 V
Height 1.75mm
Length 4.9mm
Width 3.91mm
Thickness 1.58mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet