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TTC0002(Q)

TTC0002(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-TTC0002(Q)
  • Package: TO-3PL
  • Datasheet: -
  • Stock: 600
  • Description: TTC0002(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 180W
Frequency 30MHz
Number of Elements 1
Power Dissipation 180W
Gain Bandwidth Product 30MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 18A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 900mA, 9A
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet