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VEMT2000X01

VISHAY VEMT2000X01 TRANSISTOR, PHOTO, NPN, 860NM, SMD


  • Manufacturer: Vishay Semiconductor Opto Division
  • Origchip NO: 879-VEMT2000X01
  • Package: 2-SMD, Z-Bend
  • Datasheet: PDF
  • Stock: 851
  • Description: VISHAY VEMT2000X01 TRANSISTOR, PHOTO, NPN, 860NM, SMD (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Max Power Dissipation 100mW
Orientation Top View
Number of Functions 1
Polarity NPN
Configuration SINGLE
Number of Channels 1
Power Dissipation 100mW
Viewing Angle 30°
Optoelectronic Device Type PHOTO TRANSISTOR
Lens Style Domed
Breakdown Voltage 20V
Collector Emitter Voltage (VCEO) 7V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 20V
Lens Color Black
Power Consumption 100mW
Wavelength 860nm
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 20V
On-State Current-Max 0.05A
Dark Current 100nA
Infrared Range YES
Light Current-Nom 6mA
Height 2.77mm
Length 2.3mm
Width 2.3mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 17 Weeks
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 2-SMD, Z-Bend
Number of Pins 2
Shape ROUND
Operating Temperature -40°C~100°C TA
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature DAY LIGHT, HIGH SENSITIVITY
Subcategory Photo Transistors
See Relate Datesheet