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VMMK-1218-TR1G

Trans JFET 5V 100mA GaAs pHEMT 3-Pin SMD T/R


  • Manufacturer: Broadcom Limited
  • Origchip NO: 107-VMMK-1218-TR1G
  • Package: 0402 (1005 Metric)
  • Datasheet: -
  • Stock: 540
  • Description: Trans JFET 5V 100mA GaAs pHEMT 3-Pin SMD T/R (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
HTS Code 8542.33.00.01
Subcategory FET RF Small Signal
Current Rating (Amps) 100mA
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Frequency 10GHz
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-XBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 20mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type E-pHEMT
Gain 9dB
Drain Current-Max (Abs) (ID) 0.1A
DS Breakdown Voltage-Min 5V
Power - Output 12dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 0.81dB
Voltage - Test 3V
Power Dissipation Ambient-Max 0.3W
RoHS Status RoHS Compliant
Package / Case 0402 (1005 Metric)
Surface Mount YES
Transistor Element Material GALLIUM ARSENIDE
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 5V
See Relate Datesheet