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VN0300L-G

Transistor: N-MOSFET; unipolar; 30V; 1W; TO92; 1A


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-VN0300L-G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 828
  • Description: Transistor: N-MOSFET; unipolar; 30V; 1W; TO92; 1A (Kg)

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Details

Tags

Parameters
Height 5.33mm
Packaging Bulk
Published 2013
Length 5.21mm
Width 4.19mm
JESD-609 Code e3
Part Status Active
Radiation Hardening No
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 20V
Current - Continuous Drain (Id) @ 25°C 640mA Tj
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Factory Lead Time 6 Weeks
Vgs (Max) ±30V
Mount Through Hole
Continuous Drain Current (ID) 640mA
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Gate to Source Voltage (Vgs) 30V
Number of Pins 3
Drain Current-Max (Abs) (ID) 0.64A
Weight 453.59237mg
Transistor Element Material SILICON
Drain to Source Breakdown Voltage 30V
Operating Temperature -55°C~150°C TJ
Feedback Cap-Max (Crss) 50 pF
See Relate Datesheet