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  • VP0550N3-G

VP0550N3-G

Trans MOSFET P-CH 500V 0.054A 3-Pin TO-92


  • Manufacturer: Microchip Technology
  • Origchip NO: 536-VP0550N3-G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 227
  • Description: Trans MOSFET P-CH 500V 0.054A 3-Pin TO-92 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 25V
Current - Continuous Drain (Id) @ 25°C 54mA Tj
Rise Time 8ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) -54mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.054A
Drain to Source Breakdown Voltage -500V
Height 5.33mm
Length 5.21mm
Width 4.19mm
RoHS Status ROHS3 Compliant
See Relate Datesheet