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  • VS-FB190SA10

VS-FB190SA10

MOSFET N-CH 100V 190A SOT227


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-FB190SA10
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 271
  • Description: MOSFET N-CH 100V 190A SOT227 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Mount Chassis Mount, Screw, Surface Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 568W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 568W
Case Connection ISOLATED
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 180A, 10V
Vgs(th) (Max) @ Id 4.35V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 351ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 335 ns
Turn-Off Delay Time 181 ns
Continuous Drain Current (ID) 190A
Threshold Voltage 3.3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 720A
Avalanche Energy Rating (Eas) 700 mJ
Nominal Vgs 3.3 V
Height 12.3mm
Length 38.3mm
Width 25.7mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet