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VS-GB75YF120N

VISHAY VS-GB75YF120N IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, EconoPACK


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-GB75YF120N
  • Package: Module
  • Datasheet: PDF
  • Stock: 806
  • Description: VISHAY VS-GB75YF120N IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, EconoPACK (Kg)

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Details

Tags

Parameters
Number of Pins 35
Operating Temperature 150°C TJ
Published 2013
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 480W
Polarity NPN
Power - Max 480W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.8V
Vce(on) (Max) @ Vge, Ic 4.5V @ 15V, 100A
NTC Thermistor No
Height 17mm
Length 107.8mm
Width 45.4mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mount Chassis Mount, PCB, Screw
Mounting Type Chassis Mount
Package / Case Module
See Relate Datesheet