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VT6X11T2R

NPN+NPN GENERAL PURPOSE AMPLIFIC


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-VT6X11T2R
  • Package: 6-SMD, Flat Leads
  • Datasheet: PDF
  • Stock: 429
  • Description: NPN+NPN GENERAL PURPOSE AMPLIFIC (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Power Dissipation-Max (Abs) 0.15W
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Number of Elements 1
Configuration CURRENT MIRROR
Power - Max 150mW
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 400MHz
Frequency - Transition 400MHz
See Relate Datesheet