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WPH4003-1E

N-Channel 1.7 kV 2.5 A 10.5 Ohm Flange Mount Power Mosfet - TO-3PF-3


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-WPH4003-1E
  • Package: TO-3P-3 Full Pack
  • Datasheet: PDF
  • Stock: 255
  • Description: N-Channel 1.7 kV 2.5 A 10.5 Ohm Flange Mount Power Mosfet - TO-3PF-3 (Kg)

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Details

Tags

Parameters
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 2.5A
Drain to Source Breakdown Voltage 1.7kV
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 49 mJ
Height 24.5mm
Length 15.5mm
Width 5.5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Pin Count 3
Number of Elements 1
Power Dissipation-Max 3W Ta 55W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 55W
Case Connection ISOLATED
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.5 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 3A
See Relate Datesheet