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  • ZVP2106ASTZ

ZVP2106ASTZ

MOSFET P-Chnl 60V


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZVP2106ASTZ
  • Package: E-Line-3
  • Datasheet: PDF
  • Stock: 679
  • Description: MOSFET P-Chnl 60V (Kg)

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Details

Tags

Parameters
Number of Pins 3
Radiation Hardening No
REACH SVHC No SVHC
Weight 453.59237mg
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 5Ohm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Current Rating -280mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 18V
Current - Continuous Drain (Id) @ 25°C 280mA Ta
Rise Time 15ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 280mA
Factory Lead Time 17 Weeks
Gate to Source Voltage (Vgs) 20V
Mount Surface Mount, Through Hole
Drain Current-Max (Abs) (ID) 0.28A
Drain to Source Breakdown Voltage -60V
Mounting Type Through Hole
Height 4.01mm
Package / Case E-Line-3
Length 4.77mm
Width 2.41mm
See Relate Datesheet