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  • ZVP2106GTA

ZVP2106GTA

Trans MOSFET P-CH 60V 0.45A Automotive 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZVP2106GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 317
  • Description: Trans MOSFET P-CH 60V 0.45A Automotive 4-Pin(3+Tab) SOT-223 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Resistance 5Ohm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -450mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 18V
Current - Continuous Drain (Id) @ 25°C 450mA Ta
Rise Time 15ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 450mA
Threshold Voltage -3.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.45A
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 4A
Dual Supply Voltage -60V
Nominal Vgs -3.5 V
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet