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  • ZVP2110A

ZVP2110A

Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZVP2110A
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 669
  • Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92 (Kg)

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Details

Tags

Parameters
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Reference Standard CECC
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Factory Lead Time 17 Weeks
Turn On Delay Time 7 ns
Mount Through Hole
FET Type P-Channel
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Transistor Application SWITCHING
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Rds On (Max) @ Id, Vgs 8 Ω @ 375mA, 10V
Operating Temperature -55°C~150°C TJ
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Packaging Bulk
Published 2006
Current - Continuous Drain (Id) @ 25°C 230mA Ta
JESD-609 Code e3
Rise Time 15ns
Pbfree Code yes
Drain to Source Voltage (Vdss) 100V
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Number of Terminations 3
Fall Time (Typ) 15 ns
ECCN Code EAR99
Resistance 8Ohm
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 230mA
Terminal Finish Matte Tin (Sn)
Threshold Voltage -3.5V
Gate to Source Voltage (Vgs) 20V
Subcategory Other Transistors
Drain to Source Breakdown Voltage -100V
Voltage - Rated DC -100V
Height 4.01mm
Technology MOSFET (Metal Oxide)
Length 4.77mm
Width 2.41mm
Terminal Position BOTTOM
Radiation Hardening No
Terminal Form WIRE
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Peak Reflow Temperature (Cel) 260
Lead Free Lead Free
Current Rating -230mA
See Relate Datesheet