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  • ZVP4525ZTA

ZVP4525ZTA

MOSFET P-CH 250V 0.205A SOT-89


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZVP4525ZTA
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 406
  • Description: MOSFET P-CH 250V 0.205A SOT-89 (Kg)

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Details

Tags

Parameters
Pbfree Code no
Vgs (Max) ±40V
Part Status Active
Fall Time (Typ) 3.78 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Turn-Off Delay Time 17.5 ns
Number of Terminations 3
ECCN Code EAR99
Continuous Drain Current (ID) 205mA
Resistance 14Ohm
Gate to Source Voltage (Vgs) 40V
Terminal Finish Matte Tin (Sn)
Drain Current-Max (Abs) (ID) 0.205A
Drain to Source Breakdown Voltage -285V
Subcategory Other Transistors
Height 1.6mm
Voltage - Rated DC -250V
Length 4.6mm
Width 2.6mm
Technology MOSFET (Metal Oxide)
Radiation Hardening No
Terminal Position SINGLE
REACH SVHC No SVHC
Terminal Form FLAT
RoHS Status ROHS3 Compliant
Peak Reflow Temperature (Cel) 260
Lead Free Lead Free
Current Rating -200mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.2W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Case Connection DRAIN
Turn On Delay Time 1.53 ns
FET Type P-Channel
Transistor Application SWITCHING
Factory Lead Time 17 Weeks
Rds On (Max) @ Id, Vgs 14 Ω @ 200mA, 10V
Mount Surface Mount
Vgs(th) (Max) @ Id 2V @ 1mA
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 73pF @ 25V
Package / Case TO-243AA
Current - Continuous Drain (Id) @ 25°C 205mA Ta
Number of Pins 4
Weight 130.492855mg
Gate Charge (Qg) (Max) @ Vgs 3.45nC @ 10V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Rise Time 3.78ns
Packaging Tape & Reel (TR)
Drain to Source Voltage (Vdss) 250V
Published 2001
JESD-609 Code e3
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
See Relate Datesheet