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ZXM61P02FTA

MOSFET 20V P-Chnl HDMOS


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXM61P02FTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 784
  • Description: MOSFET 20V P-Chnl HDMOS (Kg)

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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 600mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -800mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 2.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 610mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 4.5V
Rise Time 6.7ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6.7 ns
Turn-Off Delay Time 11.2 ns
Continuous Drain Current (ID) 900mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.9A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -700 mV
Height 1.1mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
See Relate Datesheet