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ZXMHC3A01T8TA

MOSFET 2N/2P-CH 30V 2.7A/2A SM8


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMHC3A01T8TA
  • Package: 8-SMD, Gull Wing
  • Datasheet: PDF
  • Stock: 323
  • Description: MOSFET 2N/2P-CH 30V 2.7A/2A SM8 (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 210mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 1.3W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 3.1A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number ZXMHC3A01T8
Pin Count 8
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A 2A
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V
Rise Time 2.3ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 2.3 ns
Turn-Off Delay Time 12.1 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.7A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.6mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 17 Weeks
Mount Surface Mount
See Relate Datesheet