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  • ZXMN10A07FTA

ZXMN10A07FTA

MOSFET N-CH 100V 700MA SOT23-3


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMN10A07FTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 851
  • Description: MOSFET N-CH 100V 700MA SOT23-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 700mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 800mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 625mW Ta
Element Configuration Single
Current 8A
Operating Mode ENHANCEMENT MODE
Power Dissipation 625mW
Turn On Delay Time 1.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 138pF @ 50V
Current - Continuous Drain (Id) @ 25°C 700mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V
Rise Time 1.5ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.5 ns
Turn-Off Delay Time 4.1 ns
Continuous Drain Current (ID) 800mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet