English

All Products

View All >>
  • ZXMN6A07FTA

ZXMN6A07FTA

ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMN6A07FTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 650
  • Description: ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Power Dissipation 806mW
Factory Lead Time 19 Weeks
Turn On Delay Time 1.8 ns
Contact Plating Tin
FET Type N-Channel
Mount Surface Mount
Transistor Application SWITCHING
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs 250m Ω @ 1.8A, 10V
Number of Pins 3
Vgs(th) (Max) @ Id 3V @ 250μA
Weight 7.994566mg
Input Capacitance (Ciss) (Max) @ Vds 166pF @ 40V
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C 1.2A Ta
Packaging Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
Published 2002
Rise Time 1.4ns
JESD-609 Code e3
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Pbfree Code yes
Part Status Active
Vgs (Max) ±20V
Fall Time (Typ) 1.4 ns
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Turn-Off Delay Time 4.9 ns
Number of Terminations 3
Continuous Drain Current (ID) 1.2A
Termination SMD/SMT
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
ECCN Code EAR99
Drain to Source Breakdown Voltage 60V
Resistance 400mOhm
Dual Supply Voltage 60V
Subcategory FET General Purpose Powers
Max Junction Temperature (Tj) 150°C
Nominal Vgs 3 V
Voltage - Rated DC 60V
Height 1.1mm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Length 3.04mm
Peak Reflow Temperature (Cel) 260
Width 1.4mm
Current Rating 1.2A
Radiation Hardening No
Time@Peak Reflow Temperature-Max (s) 40
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pin Count 3
Lead Free Lead Free
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 625mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet