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  • ZXMP10A18GTA

ZXMP10A18GTA

MOSFET P-CH 100V 2.6A SOT223


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMP10A18GTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 779
  • Description: MOSFET P-CH 100V 2.6A SOT223 (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 150mOhm
Additional Feature HIGH RELIABILITY
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -3.7A
Pin Count 4
Number of Elements 1
Number of Channels 1
Voltage 100V
Power Dissipation-Max 2W Ta
Element Configuration Single
Current 37A
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.9W
Case Connection DRAIN
Turn On Delay Time 4.6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1055pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 26.9nC @ 10V
Rise Time 6.8ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 17.9 ns
Turn-Off Delay Time 33.9 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet