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ZXMP6A17KTC

MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMP6A17KTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 157
  • Description: MOSFET ENHANCE MODE MOSFET 60V P-CHANNEL (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
JEDEC-95 Code TO-252AA
Resistance 125mOhm
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.4A
Terminal Finish Matte Tin (Sn)
Drain to Source Breakdown Voltage -60V
Subcategory Other Transistors
Height 2.39mm
Length 6.73mm
Technology MOSFET (Metal Oxide)
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
Terminal Form GULL WING
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.11W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 9.25W
Factory Lead Time 17 Weeks
Mount Surface Mount
Case Connection DRAIN
Turn On Delay Time 2.6 ns
Mounting Type Surface Mount
FET Type P-Channel
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Application SWITCHING
Number of Pins 3
Rds On (Max) @ Id, Vgs 125m Ω @ 2.3A, 10V
Weight 3.949996g
Vgs(th) (Max) @ Id 1V @ 250μA
Transistor Element Material SILICON
Input Capacitance (Ciss) (Max) @ Vds 637pF @ 30V
Operating Temperature -55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C 4.4A Ta
Packaging Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 10V
Published 2009
Rise Time 3.4ns
JESD-609 Code e3
Drain to Source Voltage (Vdss) 60V
Pbfree Code no
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Part Status Active
Vgs (Max) ±20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Fall Time (Typ) 11.3 ns
Number of Terminations 2
Turn-Off Delay Time 26.2 ns
Continuous Drain Current (ID) 6.6A
See Relate Datesheet