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  • ZXMP7A17GQTA

ZXMP7A17GQTA

MOSFET P-CH 70V 2.6A SOT223


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXMP7A17GQTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 150
  • Description: MOSFET P-CH 70V 2.6A SOT223 (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 27.9 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -70V
Pulsed Drain Current-Max (IDM) 9.6A
RoHS Status ROHS3 Compliant
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number ZXMP7A17
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 2.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 635pF @ 40V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 3.4ns
Drain to Source Voltage (Vdss) 70V
See Relate Datesheet