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ZXT12P12DXTA

Bipolar Transistors - BJT Dual 12V PNP


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXT12P12DXTA
  • Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Datasheet: PDF
  • Stock: 746
  • Description: Bipolar Transistors - BJT Dual 12V PNP (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Weight 139.989945mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 85MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXT12P12D
Pin Count 8
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 1.25W
Power - Max 1.04W
Transistor Application SWITCHING
Gain Bandwidth Product 85MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 270mV @ 30mA, 3A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 85MHz
Collector Emitter Saturation Voltage -150mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -3A
Height 950μm
Length 3.1mm
Width 3.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet