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ZXTC2062E6TA

Bipolar Transistors - BJT 20V 1A Complementary Med power transistor


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTC2062E6TA
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 326
  • Description: Bipolar Transistors - BJT 20V 1A Complementary Med power transistor (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory BIP General Purpose Small Signals
Max Power Dissipation 1.7W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 215MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number Z2062
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 1.7W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 290MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 1A 2V / 170 @ 1A 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 190mV @ 200mA, 4A / 250mV @ 175mA, 3.5A
Collector Emitter Breakdown Voltage 20V
Current - Collector (Ic) (Max) 4A 3.5A
Transition Frequency 215MHz
Max Breakdown Voltage 20V
Frequency - Transition 215MHz 290MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet