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ZXTD619MCTA

Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTD619MCTA
  • Package: 8-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 892
  • Description: Trans GP BJT NPN 50V 4A 8-Pin DFN EP T/R (Kg)

Purchase & Inquiry

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Purchase

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 2.45W
Peak Reflow Temperature (Cel) 260
Frequency 165MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 2.45W
Case Connection COLLECTOR
Power - Max 1.7W
Transistor Application SWITCHING
Gain Bandwidth Product 165MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 165MHz
Collector Emitter Saturation Voltage 270mV
Max Breakdown Voltage 50V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
See Relate Datesheet