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ZXTDE4M832TA

Bipolar Transistors - BJT 80V NPN / 70V PNP


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTDE4M832TA
  • Package: 8-VDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 910
  • Description: Bipolar Transistors - BJT 80V NPN / 70V PNP (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad
Number of Pins 832
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 1W
Terminal Position QUAD
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 3.5A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTDE4M832
Pin Count 10
JESD-30 Code R-PQFP-F10
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 325mV
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 200mA 2V / 40 @ 1.5A 5V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A
Collector Emitter Breakdown Voltage 70V
Voltage - Collector Emitter Breakdown (Max) 80V 70V
Current - Collector (Ic) (Max) 3.5A 2.5A
Transition Frequency 160MHz
Max Breakdown Voltage 70V
Frequency - Transition 160MHz 180MHz
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 7.5V
hFE Min 200
Continuous Collector Current -2.5A
Height 1mm
Length 3mm
Width 2mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet