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ZXTN04120HKTC

ZXTN04120HKTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTN04120HKTC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 891
  • Description: ZXTN04120HKTC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 2
Weight 200.005886mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.5W
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 150MHz
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 14V
hFE Min 500
Continuous Collector Current 1.5A
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet