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  • ZXTN2010ZTA

ZXTN2010ZTA

ZXTN2010ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTN2010ZTA
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 499
  • Description: ZXTN2010ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 5A
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 2.1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN2010
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 230mV @ 300mA, 6A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 170mV
Max Breakdown Voltage 60V
See Relate Datesheet