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  • ZXTN25100DGTA

ZXTN25100DGTA

ZXTN25100DGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTN25100DGTA
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 799
  • Description: ZXTN25100DGTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 5.3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTN25100D
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 1.2W
Case Connection COLLECTOR
Power - Max 3W
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 600mA, 3A
Collector Emitter Breakdown Voltage 130V
Transition Frequency 175MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 7V
hFE Min 300
Max Junction Temperature (Tj) 150°C
Height 1.8mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet