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ZXTP717MATA

ZXTP717MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-ZXTP717MATA
  • Package: 3-UDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 186
  • Description: ZXTP717MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UDFN Exposed Pad
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2016
JESD-609 Code e4
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 2.45W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 110MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2.45W
Case Connection COLLECTOR
Power - Max 3W
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 310mV @ 150mA, 4A
Collector Emitter Breakdown Voltage 12V
Current - Collector (Ic) (Max) 4.5A
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -310mV
Max Breakdown Voltage 12V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) -7.5V
Continuous Collector Current -4A
Height 580μm
Length 2.08mm
Width 2.075mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet