Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IPB80N06S207ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 55V | 250W Tc | 80A | 61 ns | N-Channel | 6.3m Ω @ 68A, 10V | 4V @ 180μA | 3400pF @ 25V | 110nC @ 10V | 37ns | 36 ns | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD50R520CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 66W Tc | SWITCHING | 0.52Ohm | 500V | SILICON | N-Channel | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 680pF @ 100V | 17nC @ 10V | 7.1A | 7.1A Tc | 550V | 15A | 166 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPI22N03S4L15AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2007 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | ULTRA LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 31W Tc | 0.0149Ohm | 30V | SILICON | N-Channel | 14.9m Ω @ 22A, 10V | 2.2V @ 10μA | 980pF @ 25V | 14nC @ 10V | 22A | 22A Tc | 30V | 88A | 20 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
IPI50R350CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2007 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | Through Hole | RoHS Compliant | Lead Free | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | Halogen Free | Single | 89W | 35 ns | 3V | 500V | 89W Tc | 10A | SWITCHING | 80 ns | SILICON | N-Channel | 350m Ω @ 5.6A, 10V | 3.5V @ 370μA | 1020pF @ 100V | 25nC @ 10V | 14ns | 12 ns | 20V | 500V | 550V | 3 V | 10A Tc | 22A | 246 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
IPI70N04S307AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 40V | 79W Tc | 80A | 0.0071Ohm | SILICON | N-Channel | 6.5m Ω @ 70A, 10V | 4V @ 50μA | 2700pF @ 25V | 40nC @ 10V | 70A | 80A Tc | 145 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPB50R299CPATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 104W | 35 ns | 500V | 104W Tc | 12A | SWITCHING | 0.299Ohm | 80 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1190pF @ 100V | 31nC @ 10V | 14ns | 12 ns | 20V | 12A Tc | 550V | 26A | 289 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
IRFR13N20DTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2000 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.235Ohm | 200V | SILICON | N-Channel | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 830pF @ 25V | 38nC @ 10V | 13A | 13A Tc | 200V | 52A | 130 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
IPI100N08S207AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-262AB | Halogen Free | 300W | 26 ns | 75V | 300W Tc | 100A | 61 ns | SILICON | N-Channel | 7.1m Ω @ 80A, 10V | 4V @ 250μA | 4700pF @ 25V | 200nC @ 10V | 51ns | 30 ns | 20V | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFR9120NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1998 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 40W Tc | SWITCHING | 0.48Ohm | 100V | SILICON | P-Channel | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 6.6A | 6.6A Tc | 100V | 26A | 100 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFR220NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2000 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 43W Tc | SWITCHING | 0.6Ohm | 200V | SILICON | N-Channel | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 300pF @ 25V | 23nC @ 10V | 5A | 5A Tc | 200V | 20A | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRLMS2002TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Cut Tape (CT) | 2003 | HEXFET® | Obsolete | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | ULTRA-LOW RESISTANCE | SOT-23-6 | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | SWITCHING | 0.03Ohm | 20V | SILICON | N-Channel | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 1310pF @ 15V | 22nC @ 5V | 6.5A | 6.5A Ta | 20V | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||
IRFR13N15DTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Contains Lead | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 86W Tc | 14A | SWITCHING | 0.18Ohm | SILICON | N-Channel | 180m Ω @ 8.3A, 10V | 5.5V @ 250μA | 620pF @ 25V | 29nC @ 10V | 26ns | 14A Tc | 56A | 130 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
IRF7241TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | SILICON | P-Channel | 41m Ω @ 6.2A, 10V | 3V @ 250μA | 3220pF @ 25V | 80nC @ 10V | 6.2A | 6.2A Ta | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRF6622TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 4.826mm | RoHS Compliant | Lead Free | 15A | No | 5 | DirectFET™ Isometric SQ | 506μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 25V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 34W | 9.4 ns | 2.2W Ta 34W Tc | 12A | SWITCHING | 0.0063Ohm | 13 ns | SILICON | N-Channel | 6.3m Ω @ 15A, 10V | 2.35V @ 25μA | 1450pF @ 13V | 17nC @ 4.5V | 16ns | 4.6 ns | 20V | 25V | 15A Ta 59A Tc | 120A | 13 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPA126N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 33W Tc | SWITCHING | 0.0126Ohm | 100V | SILICON | N-Channel | 12.6m Ω @ 35A, 10V | 3.5V @ 45μA | 2500pF @ 50V | 35nC @ 10V | 35A | 35A Tc | 100V | 140A | 90 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRL3803VSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Surface Mount | Tube | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.699mm | 9.65mm | 5.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 16 ns | 3.8W Ta 200W Tc | 140A | SWITCHING | 29 ns | SILICON | N-Channel | 5.5m Ω @ 71A, 10V | 1V @ 250μA | 3720pF @ 25V | 76nC @ 4.5V | 16V | 30V | 75A | 140A Tc | 470A | 400 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
IPD90N06S4L03ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 21 ns | 60V | 150W Tc | 90A | 140 ns | SILICON | N-Channel | 3.5m Ω @ 90A, 10V | 2.2V @ 90μA | 13000pF @ 25V | 170nC @ 10V | 6ns | 20 ns | 16V | 90A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
IPP80N04S4L04AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 7 ns | 40V | 71W Tc | 80A | 22 ns | SILICON | N-Channel | 4.3m Ω @ 80A, 10V | 2.2V @ 35μA | 4690pF @ 25V | 60nC @ 10V | 12ns | 31 ns | 20V | 80A Tc | 100 mJ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||
AUIRFR2407TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 16 ns | 110W Tc | 42A | SWITCHING | 0.026Ohm | 65 ns | SILICON | N-Channel | 26m Ω @ 25A, 10V | 4V @ 250μA | 2400pF @ 25V | 110nC @ 10V | 90ns | 66 ns | 20V | 75V | 42A Tc | 170A | |||||||||||||||||||||||||||||||||||
IRFSL7540PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | 2.084002g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | DRAIN | Single | 12 ns | 3.7V | 160W Tc | 110A | SWITCHING | 58 ns | SILICON | N-Channel | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 4555pF @ 25V | 130nC @ 10V | 76ns | 56 ns | 20V | 60V | 110A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPD100N06S403ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.5mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 150W | 30 ns | 60V | 150W Tc | 100A | 175°C | 40 ns | SILICON | N-Channel | 3.5m Ω @ 100A, 10V | 4V @ 90μA | 10400pF @ 25V | 128nC @ 10V | 20V | 60V | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
BSC159N10LSFGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | R-PDSO-F5 | FET General Purpose Powers | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 114W Tc | SWITCHING | 0.0159Ohm | 100V | SILICON | N-Channel | 15.9m Ω @ 50A, 10V | 2.4V @ 72μA | 2500pF @ 50V | 35nC @ 10V | 9.4A | 9.4A Ta 63A Tc | 100V | 252A | 155 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPA060N06NXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 12 ns | 60V | 33W Tc | 45A | SWITCHING | 0.006Ohm | 20 ns | SILICON | N-Channel | 6m Ω @ 45A, 10V | 3.3V @ 36μA | 2500pF @ 30V | 32nC @ 10V | 7 ns | 20V | 45A Tc | 180A | 60 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSB280N15NZ3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 150V | 2.8W Ta 57W Tc | 30A | SWITCHING | 0.028Ohm | 16 ns | SILICON | N-Channel | 28m Ω @ 30A, 10V | 4V @ 60μA | 1600pF @ 75V | 21nC @ 10V | 6ns | 3 ns | 20V | 9A | 9A Ta 30A Tc | 120A | 120 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFL4310PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 1999 | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | HIGH RELIABILITY | TO-261-4, TO-261AA | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G4 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1W Ta | SWITCHING | 0.2Ohm | 100V | SILICON | N-Channel | 330pF @ 100kHz | 25nC @ 100kHz | 1.6A | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF4905SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Tube | 1997 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252 | DRAIN | 170W Tc | SWITCHING | 0.02Ohm | 55V | SILICON | P-Channel | 20m Ω @ 42A, 10V | 4V @ 250μA | 3500pF @ 25V | 180nC @ 10V | 42A | 42A Tc | 55V | 280A | 140 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF7853PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 18MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Single | 2.5W | 13 ns | 4.9V | 2.5W Ta | 68 ns | 8.3A | 26 ns | N-Channel | 18m Ω @ 8.3A, 10V | 4.9V @ 100μA | 1640pF @ 25V | 39nC @ 10V | 6.6ns | 6 ns | 20V | 100V | 100V | 4.9 V | 8.3A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRLR3110ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 14MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 140mW | 24 ns | 2.5V | 140W Tc | 51 ns | 42A | 33 ns | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 100V | 2.5 V | 42A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
IRF7425PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.0082Ohm | 20V | SILICON | P-Channel | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 7980pF @ 15V | 130nC @ 4.5V | 15A | 15A Ta | 20V | 60A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
IRF5210SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W Ta 170W Tc | SWITCHING | 0.06Ohm | 100V | SILICON | P-Channel | 60m Ω @ 38A, 10V | 4V @ 250μA | 2780pF @ 25V | 230nC @ 10V | 38A | 38A Tc | 100V | 140A | 120 mJ | 10V | ±20V |
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