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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRFR4104TRLPBF IRFR4104TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0055Ohm 40V SILICON N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 42A 42A Tc 40V 480A 145 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 45W 8.5 ns 45W Tc 23A SWITCHING 0.045Ohm 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 20A 20A Tc 96A 200 mJ
    BSZ0500NSIATMA1 BSZ0500NSIATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 2.1W Ta 69W Tc 40A SWITCHING 0.0019Ohm SILICON N-Channel 1.5m Ω @ 20A, 10V 2V @ 250μA 3400pF @ 15V 52nC @ 10V 30A 30A Ta 40A Tc 160A 90 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 15 ns 40V 100W Tc 80A 0.0054Ohm 20 ns SILICON N-Channel 5.4m Ω @ 80A, 10V 4V @ 52μA 3250pF @ 25V 47nC @ 10V 10ns 20V 80A Tc 125 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2005 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W 30 ns 60V 150W Tc 90A 0.0038Ohm 40 ns SILICON N-Channel 3.8m Ω @ 90A, 10V 4V @ 90μA 10400pF @ 25V 128nC @ 10V 70ns 5 ns 20V 90A Tc 360A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 161A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 140W 25 ns 2.3V 140W Tc 161A SWITCHING 34 ns SILICON N-Channel 3.3m Ω @ 15A, 10V 2.3V @ 250μA 4380pF @ 15V 50nC @ 4.5V 42ns 19 ns 20V 30V 161A Tc 620A 1440 mJ 4.5V 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 24 ns 140W Tc 42A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 42A Tc 250A 4.5V 10V ±16V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 8 ns -30V 88W Tc 80A SWITCHING 0.0069Ohm 15 ns SILICON P-Channel 6.9m Ω @ 80A, 10V 2V @ 130μA 5700pF @ 25V 80nC @ 10V 4ns 60 ns 5V 80A Tc 30V 4.5V 10V +5V, -16V
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    		 download Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc SWITCHING 0.15Ohm 200V SILICON N-Channel 150m Ω @ 11A, 10V 4V @ 250μA 1160pF @ 25V 67nC @ 10V 18A 18A Tc 200V 72A 247 mJ 10V ±20V
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    		 download 8 Weeks Tape & Reel (TR) 2003 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 110W Tc SWITCHING 0.117Ohm 100V SILICON P-Channel 117m Ω @ 14A, 10V 4V @ 250μA 1450pF @ 25V 110nC @ 10V 23A 23A Tc 100V 92A 84 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 14 ns 30V 136W Tc 80A 0.0024Ohm 62 ns SILICON N-Channel 2.4m Ω @ 80A, 10V 2.2V @ 90μA 9750pF @ 25V 140nC @ 10V 9ns 13 ns 16V 80A Tc 260 mJ 4.5V 10V ±16V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 88W 25 ns -40V 88W Tc 80A 0.0077Ohm 34 ns SILICON P-Channel 7.4m Ω @ 80A, 10V 4V @ 150μA 6085pF @ 25V 89nC @ 10V 15ns 41 ns 20V 80A Tc 40V 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2002 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 80A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.826mm 12.6Ohm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 FET General Purpose Power 1 TO-220AB DRAIN Single 200W 12 ns 200W Tc 75A SWITCHING 55 ns SILICON N-Channel 12.6m Ω @ 48A, 10V 4V @ 250μA 3270pF @ 25V 130nC @ 10V 80ns 49 ns 20V 75V 75V 4 V 75A Tc 280 mJ 10V ±20V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 88W 17 ns -40V 88W Tc -80A 0.0064Ohm 61 ns SILICON P-Channel 6.4m Ω @ 80A, 10V 2.2V @ 150μA 6580pF @ 25V 104nC @ 10V 12ns 44 ns 16V -40V 80A Tc 40V 4.5V 10V ±16V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free P-CHANNEL Single 75W 19 ns -40V 75W Tc -70A 0.0094Ohm 24 ns SILICON N-Channel 9.1m Ω @ 70A, 10V 4V @ 120μA 4810pF @ 25V 70nC @ 10V 15ns 31 ns 20V -40V 72A 72A Tc 40V 288A 24 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 230W 16 ns 230W Tc 97A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 97A Tc 242 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 300W Tc 340A N-Channel 1.65m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 340A Tc 24V 10V ±20V
    IPL60R104C7AUMA1 IPL60R104C7AUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C7 yes Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 600V 122W Tc 20A SWITCHING SILICON N-Channel 104m Ω @ 9.7A, 10V 4V @ 490μA 1819pF @ 400V 42nC @ 10V 20A Tc 83A 97 mJ 10V ±20V
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 16A 3 TO-247-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 10V ±20V
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    		 download Through Hole Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) 7 EAR99 10.67mm ROHS3 Compliant No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-262-7 No SVHC 11.3mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 23 ns 2V 300W Tc 240A SWITCHING 80 ns SILICON N-Channel 2.6m Ω @ 140A, 10V 4V @ 250μA 7820pF @ 25V 200nC @ 10V 130ns 52 ns 20V 55V 160A Tc 680 mJ 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8409 YES FET General Purpose Power Single 375W Tc N-Channel 1.2m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 450nC @ 10V 195A 195A Tc 40V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2011 OptiMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 Halogen Free Single 300W 34 ns 100V 300W Tc 100A SWITCHING 84 ns SILICON N-Channel 3m Ω @ 100A, 10V 3.5V @ 275μA 14800pF @ 50V 206nC @ 10V 58ns 28 ns 20V 100V 100A Tc 400A 6V 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8409 YES FET General Purpose Power Single 375W Tc N-Channel 0.75m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 240A 240A Tc 40V 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 380W 66 ns 1V 380W Tc 195A SWITCHING 0.0024Ohm 110 ns SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 220ns 110 ns 16V 60V 195A Tc 290 mJ 4.5V 10V ±16V
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant No 3 TO-262-3 Wide Leads 9.65mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 300W 19 ns 300W Tc 295A 71 ns N-Channel 1.8m Ω @ 187A, 10V 4V @ 250μA 7978pF @ 25V 225nC @ 10V 241ns 100 ns 20V 40V 240A 240A Tc 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 41W 42 ns 100V 41W Tc 79A SWITCHING 112 ns SILICON N-Channel 3m Ω @ 79A, 10V 3.5V @ 270μA 14800pF @ 50V 206nC @ 10V 38ns 37 ns 20V 79A Tc 6V 10V ±20V
    AUIRLS4030-7TRL AUIRLS4030-7TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2015 Automotive, AEC-Q101, HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W Tc SWITCHING 0.0039Ohm 100V SILICON N-Channel 3.9m Ω @ 110A, 10V 2.5V @ 250μA 11490pF @ 50V 140nC @ 4.5V 190A 190A Tc 100V 750A 320 mJ 4.5V 10V ±16V
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    		 download 18 Weeks Through Hole Tube 2015 CoolMOS™ C7 yes Active 1 (Unlimited) 4 ROHS3 Compliant Lead Free TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T4 1 SINGLE WITH BUILT-IN DIODE Halogen Free 600V 162W Tc 35A SWITCHING 0.06Ohm SILICON N-Channel 60m Ω @ 15.9A, 10V 4V @ 800μA 2850pF @ 400V 68nC @ 10V 35A Tc 159 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2015 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE TO-247-3 4.8mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-247AC 517W Tc 171A SWITCHING 150V SILICON N-Channel 5.9m Ω @ 103A, 10V 5V @ 250μA 10470pF @ 50V 227nC @ 10V 171A Tc 150V 684A 763 mJ 10V ±30V