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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLHM620TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.2766mm | ROHS3 Compliant | Lead Free | No | 8 | HIGH RELIABILITY | 8-PowerTDFN | No SVHC | 990.6μm | 3.3mm | 3.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | S-PDSO-N5 | FET General Purpose Power | 1 | DRAIN | Single | 37W | 7.5 ns | 800mV | 2.7W Ta 37W Tc | 26A | SWITCHING | 57 ns | SILICON | N-Channel | 2.5m Ω @ 20A, 4.5V | 1.1V @ 50μA | 3620pF @ 10V | 78nC @ 4.5V | 25ns | 37 ns | 12V | 20V | 800 mV | 26A Ta 40A Tc | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IPN60R360P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | 1.8mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7W | 8 ns | 7W Tc | 9A | 150°C | SWITCHING | 0.36Ohm | 42 ns | SILICON | N-Channel | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 555pF @ 400V | 13nC @ 10V | 20V | 600V | 9A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | -12A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W | 13 ns | 4V | 3.8W Ta 45W Tc | -12A | SWITCHING | 23 ns | SILICON | P-Channel | 175m Ω @ 7.2A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 55ns | 37 ns | 20V | -55V | -55V | 4 V | 12A Tc | 55V | 48A | 96 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPZ40N04S5L4R8ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 48W Tc | 40A | 0.0067Ohm | SILICON | N-Channel | 4.8m Ω @ 20A, 10V | 2V @ 17μA | 1560pF @ 25V | 29nC @ 10V | 40A Tc | 160A | 53 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC050NE2LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 2V | 2.5W Ta 28W Tc | 39A | SWITCHING | 0.0076Ohm | 25V | SILICON | N-Channel | 5m Ω @ 30A, 10V | 2V @ 250μA | 760pF @ 12V | 10.4nC @ 10V | 2.2ns | 20V | 60A | 39A Ta 58A Tc | 25V | 240A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7490TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 5.4A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 39MOhm | Surface Mount | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 6.3 mm | Single | 2.5W | 13 ns | 4V | 2.5W Ta | 5.4A | SWITCHING | 51 ns | SILICON | N-Channel | 39m Ω @ 3.2A, 10V | 4V @ 250μA | 1720pF @ 25V | 56nC @ 10V | 4.2ns | 11 ns | 20V | 100V | 100V | 4 V | 5.4A Ta | 43A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSS138WH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | SIPMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | 2mm | ROHS3 Compliant | 3 | SC-70, SOT-323 | 800μm | 1.25mm | Surface Mount | 124.596154mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | Single | 2.2 ns | 500mW Ta | 280mA | 6.7 ns | SILICON | N-Channel | 3.5 Ω @ 200mA, 10V | 1.4V @ 26μA | 43pF @ 25V | 1.5nC @ 10V | 20V | 60V | 0.28A | 280mA Ta | 4.2 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS214NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 500mW | 20V | 500mW Ta | 1.5A | SILICON | N-Channel | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 143pF @ 10V | 0.8nC @ 5V | 7.8ns | 12V | 1.5A Ta | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS806NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | 2.9mm | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | 1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | Single | 7.5 ns | 20V | 41mOhm | SOT-23-3 | 500mW Ta | 2.3A | 12 ns | N-Channel | 57mOhm @ 2.3A, 2.5V | 750mV @ 11μA | 529pF @ 10V | 1.7nC @ 2.5V | 9.9ns | 8V | 2.3A Ta | 20V | 370pF | 1.8V 2.5V | ±8V | 57 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB5615PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 9.02mm | 4.826mm | 39MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 144W | 8.6 ns | 3V | 144W Tc | 120 ns | 35A | AMPLIFIER | 17.1 ns | SILICON | N-Channel | 39m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 40nC @ 10V | 23.1ns | 13.2 ns | 20V | 150V | 3 V | 35A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA80R450P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | Not Applicable | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 29W Tc | 11A | SWITCHING | 0.45Ohm | 800V | SILICON | N-Channel | 450m Ω @ 4.5A, 10V | 3.5V @ 220μA | 770pF @ 500V | 24nC @ 10V | Super Junction | 11A Tc | 800V | 29A | 29 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7440PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | 2.5MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 208W | 24 ns | 3V | 143W Tc | 24 ns | 120A | SWITCHING | 115 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 4730pF @ 25V | 135nC @ 10V | 68ns | 20V | 40V | 3 V | 120A Tc | 772A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFP4332PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.875mm | ROHS3 Compliant | Lead Free | Tin | 57A | No | 3 | ULTRA LOW ON-RESISTANCE | TO-247-3 | No SVHC | 20.3mm | 5.3mm | 33MOhm | Through Hole | -40°C~175°C TJ | 250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 120mW | 5V | 360W Tc | 290 ns | 57A | SWITCHING | SILICON | N-Channel | 33m Ω @ 35A, 10V | 5V @ 250μA | 5860pF @ 25V | 150nC @ 10V | 30V | 250V | 250V | 5 V | 57A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRFBA1405PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.9982mm | ROHS3 Compliant | Lead Free | 174A | No | 3 | HIGH RELIABILITY | TO-273AA | 15mm | 5mm | 5MOhm | Through Hole | -40°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | DRAIN | Single | 330W | 13 ns | 330W Tc | 174A | SWITCHING | 130 ns | SILICON | N-Channel | 5m Ω @ 101A, 10V | 4V @ 250μA | 5480pF @ 25V | 260nC @ 10V | 190ns | 110 ns | 20V | 55V | 174A Tc | 680A | 560 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFB31N20DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 1998 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 31A | No | 3 | TO-220-3 | No SVHC | 8.763mm | 4.69mm | 82mOhm | Through Hole | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 16 ns | 5.5V | 3.1W Ta 200W Tc | 300 ns | 31A | SWITCHING | 26 ns | SILICON | N-Channel | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 2370pF @ 25V | 107nC @ 10V | 38ns | 10 ns | 30V | 200V | 200V | 5.5 V | 31A Tc | 420 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRFU5410PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1999 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | -13A | No | 3 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 2.28mm | 6.22mm | 2.3876mm | Through Hole | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | Other Transistors | 1 | DRAIN | Single | 66W | 15 ns | -4V | 66W Tc | -13A | SWITCHING | 0.205Ohm | 45 ns | SILICON | P-Channel | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 46 ns | 20V | -100V | -100V | -4 V | 13A Tc | 100V | 52A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRL520NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 10A | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 8.77mm | 4.69mm | 220mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 48W | 4 ns | 2V | 48W Tc | 160 ns | 10A | SWITCHING | 23 ns | SILICON | N-Channel | 180m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 35ns | 22 ns | 16V | 100V | 100V | 2 V | 10A Tc | 85 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRLZ44NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 47A | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 2.54mm | 19.8mm | 4.69mm | 22mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 1 | 1 | TO-220AB | DRAIN | Single | 83W | 11 ns | 2V | 3.8W Ta 110W Tc | 120 ns | 47A | 175°C | SWITCHING | 26 ns | SILICON | N-Channel | 22m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | 15 ns | 16V | 55V | 55V | 2 V | 47A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRLZ24NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | PCB, Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Contains Lead, Lead Free | 17A | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 60mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 45W | 7.1 ns | 2V | 45W Tc | 90 ns | 18A | SWITCHING | 20 ns | SILICON | N-Channel | 60m Ω @ 11A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | 29 ns | 16V | 55V | 55V | 2 V | 18A Tc | 72A | 68 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| IPAN80R360P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | CoolMOS™ P7 | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 30W Tc | SWITCHING | 0.36Ohm | 800V | SILICON | N-Channel | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 930pF @ 500V | 30nC @ 10V | 13A Tc | 800V | 34A | 34 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFB8405 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 3.43mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 163W | 14 ns | 3V | 163W Tc | 120A | 55 ns | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 5193pF @ 25V | 161nC @ 10V | 128ns | 77 ns | 20V | 3 V | 120A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN50R950CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-261-3 | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 3V | 5W Tc | 6.6A | N-Channel | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 231pF @ 100V | 10.5nC @ 10V | 6.6A Tc | 500V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R600E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 28W | 10 ns | 650V | 28W Tc | 7.3A | SWITCHING | 0.6Ohm | 64 ns | SILICON | N-Channel | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | 8ns | 11 ns | 20V | 7.3A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3110ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 6.6mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.1mm | 2.3mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 24 ns | 2.5V | 140W Tc | 42A | SWITCHING | 33 ns | SILICON | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 100V | 2.5 V | 42A Tc | 250A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPP083N10N5AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-220-3 | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 13 ns | 100V | 100W Tc | 73A | SWITCHING | 0.0083Ohm | 21 ns | SILICON | N-Channel | 8.3m Ω @ 73A, 10V | 3.8V @ 49μA | 2730pF @ 50V | 37nC @ 10V | 5ns | 5 ns | 20V | 100V | 73A Tc | 292A | 42 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP086N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 125W | 18 ns | 100V | 125W Tc | 80A | SWITCHING | 0.0086Ohm | 31 ns | SILICON | N-Channel | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 3980pF @ 50V | 55nC @ 10V | 42ns | 8 ns | 20V | 80A Tc | 320A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R280P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Halogen Free | 32W | 12 ns | 600V | 252mOhm | PG-TO220-FP | 32W Tc | 13.8A | 36 ns | N-Channel | 280mOhm @ 5.2A, 10V | 4.5V @ 430μA | 1190pF @ 100V | 25.5nC @ 10V | 6ns | 6 ns | 20V | 13.8A Tc | 600V | 1.19nF | 10V | ±20V | 280 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB59N10DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | ROHS3 Compliant | Lead Free | 59A | No | 3 | TO-220-3 | No SVHC | 8.763mm | 4.69mm | 25mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 250 | 30 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 200W | 16 ns | 5.5V | 3.8W Ta 200W Tc | 59A | SWITCHING | 20 ns | SILICON | N-Channel | 25m Ω @ 35.4A, 10V | 5.5V @ 250μA | 2450pF @ 25V | 114nC @ 10V | 90ns | 12 ns | 30V | 100V | 100V | 5.5 V | 59A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPP032N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 3 | 1 | TO-220AB | Halogen Free | Single | 188W | 35 ns | 60V | 188W Tc | 120A | SWITCHING | 62 ns | SILICON | N-Channel | 3.2m Ω @ 100A, 10V | 4V @ 118μA | 13000pF @ 30V | 165nC @ 10V | 120ns | 20 ns | 20V | 60V | 120A Tc | 480A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540NLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2005 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.826mm | 117mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 1 | Other Transistors | 1 | DRAIN | Single | 3.1W | 13 ns | 4V | 3.1W Ta 110W Tc | -23A | SWITCHING | 40 ns | SILICON | P-Channel | 117m Ω @ 14A, 10V | 4V @ 250μA | 1450pF @ 25V | 110nC @ 10V | 67ns | 51 ns | 20V | -100V | 100V | 4 V | 23A Tc | 92A | 84 mJ | 10V | ±20V |