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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRFH5007TRPBF IRFH5007TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 5 EAR99 6.1468mm ROHS3 Compliant Lead Free No 8 8-PowerTDFN No SVHC 990.6μm 5.15mm 5.9MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 10 ns 3.6W Ta 156W Tc 100A SWITCHING 30 ns SILICON N-Channel 5.9m Ω @ 50A, 10V 4V @ 150μA 4290pF @ 25V 98nC @ 10V 14ns 11 ns 20V 75V 2 V 17A Ta 100A Tc 400A 250 mJ 10V ±20V
    IRLH5030TRPBF IRLH5030TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 5 EAR99 6.1468mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 990.6μm 5.15mm 9.9MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 21 ns 2.5V 3.6W Ta 156W Tc 100A SWITCHING 41 ns SILICON N-Channel 9m Ω @ 50A, 10V 2.5V @ 150μA 5185pF @ 50V 94nC @ 10V 72ns 41 ns 16V 100V 2.5 V 13A Ta 100A Tc 400A 230 mJ 4.5V 10V ±16V
    IPD320N20N3GATMA1 IPD320N20N3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Halogen Free 200V 136W Tc 34A SWITCHING SILICON N-Channel 32m Ω @ 34A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 34A Tc 190 mJ 10V ±20V
    IRLS3034TRLPBF IRLS3034TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 65 ns 375W Tc 195A SWITCHING 0.0017Ohm 97 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 2.5V @ 250μA 10315pF @ 25V 162nC @ 4.5V 827ns 355 ns 20V 40V 195A Tc 255 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 5 EAR99 5.9944mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 9 ns 5V 3.6W Ta 8.3W Tc 32A SWITCHING 17 ns SILICON N-Channel 100m Ω @ 5.7A, 10V 5V @ 150μA 2150pF @ 50V 56nC @ 10V 6.3ns 6.1 ns 20V 250V 3.8A Ta 46A 320 mJ 10V ±20V
    IRFS4115TRL7PP IRFS4115TRL7PP Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE GULL WING R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN 380W 18 ns 380W Tc 105A SWITCHING 0.0118Ohm 37 ns SILICON N-Channel 11.8m Ω @ 63A, 10V 5V @ 250μA 5320pF @ 50V 110nC @ 10V 50ns 23 ns 20V 150V 105A Tc 420A 230 mJ 10V ±20V
    IPL60R199CPAUMA1 IPL60R199CPAUMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2006 CoolMOS™ no Not For New Designs 2A (4 Weeks) 4 EAR99 ROHS3 Compliant 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 4 YES S-PSSO-N4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 139W Tc SWITCHING 0.199Ohm 600V SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1520pF @ 100V 32nC @ 10V 16.4A Tc 650V 51A 436 mJ 10V ±20V
    IPB160N04S203ATMA4 IPB160N04S203ATMA4 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 300W Tc 160A 0.0029Ohm SILICON N-Channel 2.9m Ω @ 60A, 10V 4V @ 250μA 5300pF @ 25V 170nC @ 10V 160A Tc 640A 810 mJ 10V ±20V
    IRFS4310TRLPBF IRFS4310TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead Tin 140A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 7MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 300W 26 ns 4V 300W Tc 68 ns 140A SWITCHING 68 ns SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 110ns 78 ns 20V 100V 100V 4 V 75A 130A Tc 550A 980 mJ 10V ±20V
    IPB014N06NATMA1 IPB014N06NATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Cut Tape (CT) 2008 OptiMOS™ no Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead No 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING 3 R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 214W 22 ns 2.8V 60V 3W Ta 214W Tc 180A SWITCHING 0.0014Ohm 47 ns SILICON N-Channel 1.4m Ω @ 100A, 10V 2.8V @ 143μA 7800pF @ 30V 106nC @ 10V 18ns 14 ns 20V 60V 34A 34A Ta 180A Tc 420 mJ 6V 10V ±20V
    IPB016N06L3GATMA1 IPB016N06L3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 LOGIC LEVEL COMPATIBLE TO-263-7, D2Pak (6 Leads + Tab) No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G6 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 250W 35 ns 60V 250W Tc 180A SWITCHING 131 ns SILICON N-Channel 1.6m Ω @ 100A, 10V 2.2V @ 196μA 28000pF @ 30V 166nC @ 4.5V 79ns 38 ns 20V 180A Tc 634 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm 48MOhm Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 330W 18 ns 330W Tc 45A SWITCHING 30 ns SILICON N-Channel 48m Ω @ 26A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 31ns 21 ns 30V 250V 45A Tc 10V ±30V
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    		 download 12 Weeks Tape & Reel (TR) 2013 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 417W Tc SWITCHING 0.0169Ohm 200V SILICON N-Channel 16.9m Ω @ 51A, 10V 5V @ 250μA 6484pF @ 50V 162nC @ 10V 90A 90A 200V 312A 693 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB Single 12 ns 3.7V 160W Tc 110A SWITCHING 60V 58 ns SILICON N-Channel 5.1m Ω @ 65A, 10V 3.7V @ 100μA 4555pF @ 25V 130nC @ 10V 76ns 56 ns 20V 110A Tc 60V 6V 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 14 ns 40V 94W Tc 80A SILICON N-Channel 3.7m Ω @ 80A, 10V 4V @ 53μA 5260pF @ 25V 66nC @ 10V 12ns 16 ns 20V 80A Tc 200 mJ 10V ±20V
    BSC016N03MSGATMA1 BSC016N03MSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ no Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 125W 31 ns 30V 2.5W Ta 125W Tc 28A SWITCHING 0.002Ohm 42 ns SILICON N-Channel 1.6m Ω @ 30A, 10V 2V @ 250μA 13000pF @ 15V 173nC @ 10V 16ns 16V 28A Ta 100A Tc 400A 340 mJ 4.5V 10V ±20V
    IRF6636TRPBF IRF6636TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 4.826mm ROHS3 Compliant Lead Free 18A No 5 DirectFET™ Isometric ST No SVHC 506μm 3.95mm Surface Mount -40°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 42W 14 ns 2.45V 2.2W Ta 42W Tc 15A SWITCHING 16 ns SILICON N-Channel 4.5m Ω @ 18A, 10V 2.45V @ 250μA 2420pF @ 10V 27nC @ 4.5V 19ns 6.2 ns 20V 20V 18A Ta 81A Tc 28 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.4986mm 3.9878mm 18MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 13 ns 2.5W Ta 8.3A SWITCHING 26 ns SILICON N-Channel 18m Ω @ 8.3A, 10V 4.9V @ 100μA 1640pF @ 25V 39nC @ 10V 6.6ns 6 ns 20V 100V 8.3A Ta 66A 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 5 DirectFET™ Isometric MX No SVHC 508μm 5.0546mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 21 ns 1.8V 2.8W Ta 89W Tc 32A SWITCHING 24 ns SILICON N-Channel 1.7m Ω @ 32A, 10V 2.35V @ 100μA 6190pF @ 15V 74nC @ 4.5V 31ns 16 ns 20V 30V 32A Ta 180A Tc 260A 4.5V 10V ±20V
    BSZ014NE2LS5IFATMA1 BSZ014NE2LS5IFATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 25V 2.1W Ta 69W Tc 40A SWITCHING 0.0021Ohm SILICON N-Channel 1.45m Ω @ 20A, 10V 2V @ 250μA 2300pF @ 12V 33nC @ 10V 3ns 16V Schottky Diode (Body) 31A 31A Ta 40A Tc 160A 4.5V 10V ±16V
    SPA11N80C3XKSA2 SPA11N80C3XKSA2 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2005 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Isolated Tab Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 34W Tc 11A SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 11A Tc 800V 33A 470 mJ 10V ±20V
    IRFP048NPBF IRFP048NPBF Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Bulk 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 36A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 20.3mm 5.3mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 130W 11 ns 4V 140W Tc 140 ns 64A SWITCHING 32 ns SILICON N-Channel 16m Ω @ 37A, 10V 4V @ 250μA 1900pF @ 25V 89nC @ 10V 78ns 48 ns 20V 55V 55V 4 V 62A 64A Tc 270 mJ 10V ±20V
    IPP50N10S3L16AKSA1 IPP50N10S3L16AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 10 ns 100V 100W Tc 50A 0.0209Ohm 28 ns SILICON N-Channel 15.7m Ω @ 50A, 10V 2.4V @ 60μA 4180pF @ 25V 64nC @ 10V 5ns 20V 50A Tc 200A 4.5V 10V ±20V
    SPU07N60C3BKMA1 SPU07N60C3BKMA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ no Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 7.3A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Not Halogen Free 83W 6 ns 600V 83W Tc 7.3A SWITCHING 0.6Ohm 60 ns SILICON N-Channel 600m Ω @ 4.6A, 10V 3.9V @ 350μA 790pF @ 25V 27nC @ 10V 3.5ns 7 ns 20V 7.3A Tc 21.9A 10V ±20V
    BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free 6 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 6-VSSOP, SC-88, SOT-363 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 6 1 SINGLE WITH BUILT-IN DIODE Halogen Free 500mW 20V 500mW Ta 1.5A SILICON N-Channel 140m Ω @ 1.5A, 4.5V 1.2V @ 3.7μA 143pF @ 10V 0.8nC @ 5V 7.8ns 12V 1.5A Ta 9 pF 2.5V 4.5V ±12V
    IRF2804PBF IRF2804PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 2.3Ohm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 TO-220AB DRAIN Single 330W 13 ns 4V 300W Tc 84 ns 270A SWITCHING 130 ns SILICON N-Channel 2.3m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 40V 4 V 75A Tc 540 mJ 10V ±20V
    IRLI540NPBF IRLI540NPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 1998 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6mm ROHS3 Compliant Lead Free 20A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.8mm 53mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 42W 11 ns 2V 54W Tc 290 ns 23A SWITCHING 2kV 39 ns SILICON N-Channel 44m Ω @ 12A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 81ns 62 ns 16V 100V 100V 2 V 23A Tc 4V 10V ±16V
    SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2007 SIPMOS® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 128W 7.6 ns -100V 128W Tc 15A 0.2Ohm 50 ns SILICON P-Channel 200m Ω @ 11.3A, 10V 2V @ 1.54mA 1490pF @ 25V 62nC @ 10V 21ns 29 ns 20V 15A Tc 100V 60A 4.5V 10V ±20V
    IPB025N08N3GATMA1 IPB025N08N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 300W 28 ns 80V 300W Tc 120A SWITCHING 0.0025Ohm 86 ns SILICON N-Channel 2.5m Ω @ 100A, 10V 3.5V @ 270μA 14200pF @ 40V 206nC @ 10V 73ns 33 ns 20V 120A Tc 480A 6V 10V ±20V
    IRLR8729TRPBF IRLR8729TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 55W 10 ns 55W Tc 58A SWITCHING 0.0089Ohm 11 ns SILICON N-Channel 8.9m Ω @ 25A, 10V 2.35V @ 25μA 1350pF @ 15V 16nC @ 4.5V 47ns 10 ns 20V 30V 50A 58A Tc 260A 74 mJ 4.5V 10V ±20V