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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    SPD08P06PGBTMA1 SPD08P06PGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead -8.8A 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.5mm Surface Mount -55°C~175°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Not Halogen Free 42W 16 ns -3V -60V 42W Tc -8.83A 175°C 48 ns SILICON P-Channel 300m Ω @ 10A, 6.2V 4V @ 250μA 420pF @ 25V 13nC @ 10V 46ns 14 ns 20V -60V 8.83A Ta 60V 70 mJ 6.2V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 79W Tc SWITCHING 0.115Ohm 100V SILICON N-Channel 115m Ω @ 10A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 16A 16A Tc 100V 60A 150 mJ 10V ±20V
    IRFR4105TRPBF IRFR4105TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 25A No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 2.38mm 45mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 7 ns 4V 68W Tc 86 ns 27A SWITCHING 31 ns SILICON N-Channel 45m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 49ns 40 ns 20V 55V 55V 4 V 20A 27A Tc 65 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 30A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 1.778mm 6.22mm 24.5MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 10 ns 4V 48W Tc 29 ns 30A SWITCHING 26 ns SILICON N-Channel 24.5m Ω @ 18A, 10V 4V @ 250μA 740pF @ 25V 27nC @ 10V 40ns 24 ns 20V 55V 55V 4 V 30A Tc 29 mJ 10V ±20V
    IRF7241TRPBF IRF7241TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -6.2A No 8 HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 41MOhm Surface Mount -55°C~150°C TJ -40V MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING 260 30 Other Transistors 1 Single 2.5W 24 ns -3V 2.5W Ta 48 ns -6.2A SWITCHING 210 ns SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 280ns 100 ns 20V -40V -40V -3 V 6.2A Ta 40V 4.5V 10V ±20V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 4.7Ohm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 14 ns 200W Tc 135A SWITCHING 68 ns SILICON N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 75A 135A Tc 700A 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free 72A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.82mm 12MOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 150W 7.6 ns 4V 150W Tc 100 ns 72A SWITCHING 157 ns SILICON N-Channel 12m Ω @ 43A, 10V 4V @ 250μA 1985pF @ 25V 110nC @ 10V 200ns 166 ns 20V 60V 60V 4 V 72A Tc 290A 10V ±20V
    IRFS3306TRLPBF IRFS3306TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 175°C -55°C 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 230W 15 ns 4V 4.2mOhm D2PAK 230W Tc 120A 40 ns N-Channel 4.2mOhm @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 46ns 77 ns 20V 60V 4 V 120A Tc 60V 4.52nF 10V ±20V 4.2 mΩ
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 3.1MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 135W 19 ns 1.9V 135W Tc 160A SWITCHING 21 ns SILICON N-Channel 3.1m Ω @ 25A, 10V 2.35V @ 100μA 4880pF @ 15V 59nC @ 4.5V 35ns 17 ns 20V 30V 1.9 V 160A Tc 640A 250 mJ 4.5V 10V ±20V
    IPB65R190CFDATMA1 IPB65R190CFDATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2008 CoolMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 151W Tc SWITCHING 0.19Ohm 650V SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 730μA 1850pF @ 100V 68nC @ 10V 17.5A 17.5A Tc 650V 57.2A 484 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 9 EAR99 ROHS3 Compliant Lead Free No 15 DirectFET™ Isometric L8 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 FET General Purpose Power 1 Single DRAIN 3.3W 44 ns 3.3W Ta 125W Tc 124A SWITCHING 0.0035Ohm 92 ns SILICON N-Channel 3.5m Ω @ 74A, 10V 4V @ 250μA 11560pF @ 25V 300nC @ 10V 32ns 41 ns 20V 375A 20A Ta 124A Tc 100V 500A 260 mJ 10V ±20V
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    		 download Tape & Reel (TR) 2002 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 208W Tc 0.19Ohm 600V SILICON N-Channel 190m Ω @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 114nC @ 10V 20.7A 20.7A Tc 650V 62.1A 690 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free 83A No 3 TO-220-3 No SVHC 9.02mm 4.82mm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 TO-220AB DRAIN Single 330mW 18 ns 5V 350W Tc 130 ns 83A SWITCHING 25 ns SILICON N-Channel 15m Ω @ 33A, 10V 5V @ 250μA 4460pF @ 50V 110nC @ 10V 60ns 35 ns 30V 150V 150V 5 V 75A 85A Tc 10V ±30V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 9 EAR99 9.144mm ROHS3 Compliant Lead Free No 11 DirectFET™ Isometric L8 No SVHC 508μm 7.112mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N9 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 125W 18 ns 3V 3.3W Ta 125W Tc 26A SWITCHING 0.0023Ohm 80 ns SILICON N-Channel 2.3m Ω @ 96A, 10V 4V @ 250μA 12222pF @ 25V 300nC @ 10V 87ns 33 ns 20V 75V 26A Ta 375A Tc 640A 257 mJ 10V ±20V
    IRF1324PBF IRF1324PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 300W 17 ns 4V 300W Tc 340A SWITCHING 83 ns SILICON N-Channel 1.5m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 190ns 120 ns 20V 24V 24V 4 V 195A Tc 270 mJ 10V ±20V
    IRFB42N20DPBF IRFB42N20DPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 42A No 3 TO-220-3 No SVHC 15.24mm 4.69mm 55Ohm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 18 ns 5.5V 2.4W Ta 330W Tc 330 ns 44A SWITCHING 29 ns SILICON N-Channel 55m Ω @ 26A, 10V 5.5V @ 250μA 3430pF @ 25V 140nC @ 10V 69ns 32 ns 30V 200V 200V 5.5 V 42.6A 44A Tc 10V ±30V
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 19.8mm 4.699mm 1.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Not Qualified 1 TO-220AB Single 375W 65 ns 2.5V 375W Tc 195A 175°C SWITCHING 97 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 2.5V @ 250μA 10315pF @ 25V 162nC @ 4.5V 827ns 355 ns 20V 40V 195A Tc 255 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Lead Free 51A No 3 TO-220-3 No SVHC 16.51mm 4.82mm 32Ohm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 320W 16 ns 5V 3.8W Ta 230W Tc 210 ns 60A SWITCHING 28 ns SILICON N-Channel 32m Ω @ 36A, 10V 5V @ 250μA 2770pF @ 25V 89nC @ 10V 47ns 25 ns 30V 150V 150V 5 V 51A Tc 240A 470 mJ 10V ±30V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 19.8mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 375W 21 ns 2.1V 375W Tc 195A 175°C 180 ns N-Channel 2.6m Ω @ 100A, 10V 3.7V @ 250μA 13660pF @ 25V 407nC @ 10V 120ns 115 ns 20V 75V 195A Tc 6V 10V ±20V
    SPW11N80C3FKSA1 SPW11N80C3FKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2005 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 156W Tc SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 11A 11A Tc 800V 33A 470 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 4.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 375W 21 ns 4V 375W Tc 180A SWITCHING 100 ns SILICON N-Channel 4.7m Ω @ 106A, 10V 4V @ 250μA 9575pF @ 50V 215nC @ 10V 86ns 77 ns 20V 100V 180A Tc 720A 10V ±20V
    IPB017N08N5ATMA1 IPB017N08N5ATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.7mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 375W 40 ns 3V 80V 375W Tc 177A 175°C SWITCHING 102 ns SILICON N-Channel 1.7m Ω @ 100A, 10V 3.8V @ 280μA 16900pF @ 40V 223nC @ 10V 36ns 37 ns 20V 80V 120A Tc 480A 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free 210A No 3 TO-220-3 No SVHC 9.02mm 4.82mm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 370W 25 ns 4V 370W Tc 63 ns 210A SWITCHING 69 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 9400pF @ 50V 220nC @ 10V 87ns 95 ns 20V 75V 75V 4 V 120A Tc 850A 200 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 15.87mm ROHS3 Compliant Lead Free 3 TO-247-3 No SVHC 20.7mm 5.31mm Through Hole 38.000013g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 341W 52 ns 3.7V 341W Tc 195A 172 ns N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13703pF @ 25V 411nC @ 10V 141ns 104 ns 20V 195A Tc 60V 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2010 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.31mm 1.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 366W 32 ns 2.2V 366W Tc 52 ns 195A SWITCHING 160 ns SILICON N-Channel 1.3m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 105ns 100 ns 20V 40V 195A Tc 722 mJ 6V 10V ±20V
    IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 136W 11 ns 200V 136W Tc 34A SWITCHING 21 ns SILICON N-Channel 32m Ω @ 34A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 9ns 4 ns 20V 34A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 1.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 380W 59 ns 4V 380W Tc 130 ns 350A SWITCHING 160 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 4V @ 250μA 8920pF @ 25V 330nC @ 10V 370ns 190 ns 20V 40V 195A Tc 290 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 46MOhm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 310mW 25 ns 5V 310W Tc 290 ns 44A SWITCHING 44 ns SILICON N-Channel 46m Ω @ 26A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 27ns 19 ns 30V 250V 250V 5 V 44A Tc 10V ±30V
    IPP030N10N5AKSA1 IPP030N10N5AKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB DRAIN Halogen Free Single 25 ns 100V 250W Tc 120A SWITCHING 0.003Ohm 52 ns SILICON N-Channel 3m Ω @ 100A, 10V 3.8V @ 184μA 10300pF @ 50V 139nC @ 10V 15ns 17 ns 20V 100V 120A Tc 480A 6V 10V ±20V
    IPP111N15N3GXKSA1 IPP111N15N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 214W Tc SWITCHING 0.0111Ohm 150V SILICON N-Channel 11.1m Ω @ 83A, 10V 4V @ 160μA 3230pF @ 75V 55nC @ 10V 83A 83A Tc 150V 332A 330 mJ 8V 10V ±20V