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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRLP3034PBF IRLP3034PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant No 3 TO-247-3 No SVHC 20.7mm 5.3086mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-247AC DRAIN Single 341W 65 ns 2.5V 341W Tc 327A SWITCHING 0.0017Ohm 97 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 2.5V @ 250μA 10315pF @ 25V 162nC @ 4.5V 827ns 355 ns 20V 40V 195A 195A Tc 224 mJ 4.5V 10V ±20V
    IPA60R125C6XKSA1 IPA60R125C6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 15 ns 600V 34W Tc 30A SWITCHING 83 ns SILICON N-Channel 125m Ω @ 14.5A, 10V 3.5V @ 960μA 2127pF @ 100V 96nC @ 10V 12ns 7 ns 20V 30A Tc 89A 10V ±20V
    IPD33CN10NGATMA1 IPD33CN10NGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Halogen Free 58W 11 ns 100V 58W Tc 27A SWITCHING 17 ns SILICON N-Channel 33m Ω @ 27A, 10V 4V @ 29μA 1570pF @ 50V 24nC @ 10V 21ns 4 ns 20V 27A Tc 108A 47 mJ 10V ±20V
    BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 38W 4 ns 150V 38W Tc 13A SWITCHING 0.09Ohm 8 ns SILICON N-Channel 90m Ω @ 10A, 10V 4V @ 20μA 510pF @ 75V 7nC @ 10V 3 ns 20V 13A Tc 52A 30 mJ 8V 10V ±20V
    IRL60B216 IRL60B216 Infineon Technologies $0.00
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    		 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 Unknown 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 TO-220AB Single 70 ns 2.4V 375W Tc 195A SWITCHING 0.0019Ohm 60V 190 ns SILICON N-Channel 1.9m Ω @ 100A, 10V 2.4V @ 250μA 15570pF @ 25V 258nC @ 4.5V 20V 195A Tc 60V 780A 1045 mJ 4.5V 10V ±20V
    SPD02N80C3ATMA1 SPD02N80C3ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 2A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 800V MOSFET (Metal Oxide) 42W 25 ns 800V 2.4Ohm PG-TO252-3 42W Tc 2A 65 ns N-Channel 2.7Ohm @ 1.2A, 10V 3.9V @ 120μA 290pF @ 100V 16nC @ 10V 15ns 18 ns 20V 2A Tc 800V 290pF 10V ±20V 2.7 Ω
    SPD18P06PGBTMA1 SPD18P06PGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AB Not Halogen Free 80W 12 ns -60V 80W Tc 18.6A 24.5 ns SILICON P-Channel 130m Ω @ 13.2A, 10V 4V @ 1mA 860pF @ 25V 33nC @ 10V 5.8ns 11 ns 20V 18.6A Tc 60V 74.4A 10V ±20V
    IPD50P04P413ATMA1 IPD50P04P413ATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 17 ns -40V 58W Tc 50A 0.0126Ohm 22 ns SILICON P-Channel 12.6m Ω @ 50A, 10V 4V @ 85μA 3670pF @ 25V 51nC @ 10V 10ns 28 ns 20V 50A Tc 40V 20A 18 mJ 10V ±20V
    IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.9Ohm 800V SILICON N-Channel 900m Ω @ 2.2A, 10V 3.5V @ 110μA 350pF @ 500V 15nC @ 10V 6A Tc 800V 14A 13 mJ 10V ±20V
    IRFR15N20DTRPBF IRFR15N20DTRPBF Infineon Technologies $0.00
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    		 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 17A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 165Ohm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 3W 9.7 ns 5.5V 3W Ta 140W Tc 17A 175°C SWITCHING 17 ns SILICON N-Channel 165m Ω @ 10A, 10V 5.5V @ 250μA 910pF @ 25V 41nC @ 10V 32ns 8.9 ns 30V 200V 200V 5.5 V 17A Tc 68A 260 mJ 10V ±30V
    IPD036N04LGBTMA1 IPD036N04LGBTMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2004 OptiMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 94W Tc SWITCHING 0.0049Ohm 40V SILICON N-Channel 3.6m Ω @ 90A, 10V 2V @ 45μA 6300pF @ 20V 78nC @ 10V 90A 90A Tc 40V 400A 55 mJ 4.5V 10V ±20V
    IRF7820TRPBF IRF7820TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 7.1 ns 4V 2.5W Ta 3.7A SWITCHING 200V 14 ns SILICON N-Channel 78m Ω @ 2.2A, 10V 5V @ 100μA 1750pF @ 100V 44nC @ 10V 3.2ns 12 ns 20V 4 V 3.7A Ta 200V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1999 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 17A No 3 AVALANCHE RATED TO-220-3 No SVHC 2.54mm 19.8mm 4.69mm 70mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 45W 4.9 ns 2V 45W Tc 17A 175°C SWITCHING 19 ns SILICON N-Channel 70m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 55V 4 V 17A Tc 68A 10V ±20V
    BSZ019N03LSATMA1 BSZ019N03LSATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 69W 2V 2.1W Ta 69W Tc 22A SWITCHING 0.0025Ohm 30V SILICON N-Channel 1.9m Ω @ 20A, 10V 2V @ 250μA 2800pF @ 15V 44nC @ 10V 6.8ns 20V 22A Ta . 40A Tc 30V 4.5V 10V ±20V
    IRF7452TRPBF IRF7452TRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Not For New Designs 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 4.5A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 2.5W 9.5 ns 5.5V 2.5W Ta 4.5A SWITCHING 0.06Ohm 16 ns SILICON N-Channel 60m Ω @ 2.7A, 10V 5.5V @ 250μA 930pF @ 25V 50nC @ 10V 11ns 13 ns 30V 100V 5.5 V 4.5A Ta 36A 200 mJ 10V ±30V
    IRF7807ZTRPBF IRF7807ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 11A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.2MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 1 SINGLE WITH BUILT-IN DIODE 2.5W 6.9 ns 1.8V 2.5W Ta 11A SWITCHING 10 ns SILICON N-Channel 13.8m Ω @ 11A, 10V 2.25V @ 250μA 770pF @ 15V 11nC @ 4.5V 6.2ns 3.1 ns 20V 30V 1.8 V 11A Ta 4.5V 10V ±20V
    BSZ100N06NSATMA1 BSZ100N06NSATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2012 OptiMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free 60V 8.5mOhm PG-TSDSON-8-FL 2.1W Ta 36W Tc 40A N-Channel 10mOhm @ 20A, 10V 3.3V @ 14μA 1075pF @ 30V 15nC @ 10V 2ns 20V 40A Tc 60V 1.075nF 6V 10V ±20V 10 mΩ
    IRF9328TRPBF IRF9328TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 11.9MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 Other Transistors 1 Single 2.5W 19 ns -1.8V 2.5W Ta -12A 150°C SWITCHING 80 ns SILICON P-Channel 11.9m Ω @ 12A, 10V 2.4V @ 25μA 1680pF @ 25V 52nC @ 10V 57ns 66 ns 20V -30V -1.8 V 12A Tc 30V 96A 4.5V 10V ±20V
    BSP297H6327XTSA1 BSP297H6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2008 SIPMOS® yes Active 1 (Unlimited) 4 SMD/SMT EAR99 6.5mm ROHS3 Compliant Lead Free No 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA No SVHC 1.6mm 6.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 66A e3 Tin (Sn) DUAL GULL WING 4 200V 1 DRAIN Halogen Free Single 1.8W 5.2 ns 1.4V 200V 1.8W Ta 600mA 49 ns SILICON N-Channel 1.8 Ω @ 660mA, 10V 1.8V @ 400μA 357pF @ 25V 16.1nC @ 10V 3.8ns 19 ns 20V 200V 200V 1.4 V 660mA Ta 4.5V 10V ±20V
    BSP129H6327XTSA1 BSP129H6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2012 SIPMOS® yes Active 1 (Unlimited) 4 SMD/SMT EAR99 6.5mm ROHS3 Compliant Lead Free Tin No 4 TO-261-4, TO-261AA No SVHC 1.8mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) PG-SOT223-4 35A e3 DUAL GULL WING 4 1 240V 1 DRAIN Halogen Free Single 1.7W 4.4 ns -2.1V 240V 1.8W Ta 120mA 150°C 20Ohm 22 ns SILICON N-Channel 6 Ω @ 350mA, 10V 1V @ 108μA 108pF @ 25V 5.7nC @ 5V 4.1ns 35 ns 20V 240V 240V Depletion Mode -1.4 V 350mA Ta 0V 10V ±20V
    IRFL4105TRPBF IRFL4105TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 4 SMD/SMT EAR99 6.6802mm ROHS3 Compliant Contains Lead, Lead Free 3.7A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-261-4, TO-261AA No SVHC 1.8mm 3.7mm 45mOhm Surface Mount -55°C~150°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING R-PDSO-G4 1 1 DRAIN Single 2.1W 7.1 ns 4V 1W Ta 82 ns 3.7A 150°C SWITCHING 19 ns SILICON N-Channel 45m Ω @ 3.7A, 10V 4V @ 250μA 660pF @ 25V 35nC @ 10V 12ns 12 ns 20V 55V 55V 4 V 3.7A Ta 10V ±20V
    IPB054N08N3GATMA1 IPB054N08N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 150W 18 ns 2.8V 80V 150W Tc 80A SWITCHING 0.0054Ohm 38 ns SILICON N-Channel 5.4m Ω @ 80A, 10V 3.5V @ 90μA 4750pF @ 40V 69nC @ 10V 66ns 10 ns 20V 80A Tc 6V 10V ±20V
    IRF1018ESTRLPBF IRF1018ESTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 8.4MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W 13 ns 4V 110W Tc 79A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 4 V 79A Tc 88 mJ 10V ±20V
    IRFR3607TRPBF IRFR3607TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W 16 ns 2V 140W Tc 80mA SWITCHING 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 2 V 56A 56A Tc 10V ±20V
    IRLB8721PBF IRLB8721PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2005 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 8.7mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 65W 9.1 ns 1.8V 65W Tc 24 ns 62A SWITCHING 9 ns SILICON N-Channel 8.7m Ω @ 31A, 10V 2.35V @ 25μA 1077pF @ 15V 13nC @ 4.5V 93ns 17 ns 20V 30V 30V 1.8 V 62A Tc 250A 98 mJ 4.5V 10V ±20V
    IPA60R600P7SXKSA1 IPA60R600P7SXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 21W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 1.7A, 10V 4V @ 80μA 363pF @ 400V 9nC @ 10V 6A Tc 600V 16A 17 mJ 10V ±20V
    IRLU024NPBF IRLU024NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 17A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 65mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 45W 7.1 ns 2V 45W Tc 17A SWITCHING 20 ns SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 74ns 29 ns 16V 55V 55V 2 V 17A Tc 72A 68 mJ 4V 10V ±16V
    IRFS4615TRLPBF IRFS4615TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 144W 15 ns 144W Tc 33A SWITCHING 0.042Ohm 25 ns SILICON N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 35ns 20 ns 20V 150V 33A Tc 10V ±20V
    IRFR3411TRPBF IRFR3411TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 32A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 44MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 130W 11 ns 4V 130W Tc 170 ns 32A SWITCHING 39 ns SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 35ns 35 ns 20V 100V 4 V 32A Tc 10V ±20V
    BSC360N15NS3GATMA1 BSC360N15NS3GATMA1 Infineon Technologies $0.00
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    Min: 1

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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC not_compliant 1.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 1 FET General Purpose Powers Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 74W 9 ns 3V 150V 74W Tc 33A 150°C SWITCHING 0.036Ohm 12 ns SILICON N-Channel 36m Ω @ 25A, 10V 4V @ 45μA 1190pF @ 75V 15nC @ 10V 6ns 20V 150V 33A Tc 8V 10V ±20V