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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPA105N15N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 40.5W | 17 ns | 150V | 40.5W Tc | 37A | 35 ns | SILICON | N-Channel | 10.5m Ω @ 37A, 10V | 4V @ 160μA | 4300pF @ 75V | 55nC @ 10V | 20ns | 9 ns | 20V | 37A Tc | 740 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA50R140CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 34W Tc | SWITCHING | 0.14Ohm | 500V | SILICON | N-Channel | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 2540pF @ 100V | 64nC @ 10V | 23A | 23A Tc | 500V | 56A | 616 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP028N08N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 28 ns | 80V | 300W Tc | 100A | SWITCHING | 0.0028Ohm | 86 ns | SILICON | N-Channel | 2.8m Ω @ 100A, 10V | 3.5V @ 270μA | 14200pF @ 40V | 206nC @ 10V | 73ns | 33 ns | 20V | 100A Tc | 400A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPW15N60C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 15A | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | 156W | 600V | 156W Tc | 15A | 0.28Ohm | 50 ns | SILICON | N-Channel | 280m Ω @ 9.4A, 10V | 3.9V @ 675μA | 1660pF @ 25V | 63nC @ 10V | 5 ns | 20V | 15A Tc | 45A | 460 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPW65R150CFDFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2011 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 1 | Single | 195.3W | 12.4 ns | 650V | 195.3W Tc | 22.4A | SWITCHING | 52.8 ns | SILICON | N-Channel | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 2340pF @ 100V | 86nC @ 10V | 7.6ns | 5.6 ns | 20V | 700V | 22.4A Tc | 72A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP60R125C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2015 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 219W | 15 ns | 600V | 219W Tc | 30A | SWITCHING | 83 ns | SILICON | N-Channel | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 2127pF @ 100V | 96nC @ 10V | 12ns | 7 ns | 20V | 30A Tc | 89A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPW60R099P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 600V | 278W Tc | 37.9A | N-Channel | 99m Ω @ 14.5A, 10V | 4.5V @ 1.21mA | 3330pF @ 100V | 70nC @ 10V | 37.9A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW80R280P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | CoolMOS™ | yes | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 101W Tc | SWITCHING | 0.28Ohm | 800V | SILICON | N-Channel | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 1200pF @ 500V | 36nC @ 10V | Super Junction | 17A Tc | 800V | 45A | 43 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R110CFDFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 16 ns | 650V | 277.8W Tc | 31.2A | SWITCHING | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 31.2A Tc | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP220N25NFDAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | not_compliant | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 14 ns | 250V | 300W Tc | 61A | 0.022Ohm | 26 ns | SILICON | N-Channel | 22m Ω @ 61A, 10V | 4V @ 270μA | 7076pF @ 125V | 86nC @ 10V | 10ns | 8 ns | 20V | 61A Tc | 244A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPW65R065C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 17 ns | 650V | 58mOhm | PG-TO247-3 | 171W Tc | 33A | 72 ns | N-Channel | 65mOhm @ 17.1A, 10V | 4V @ 850μA | 3020pF @ 400V | 64nC @ 10V | 14ns | 7 ns | 20V | 33A Tc | 650V | 3.02nF | 10V | ±20V | 65 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R110CFDAATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Automotive, AEC-Q101, CoolMOS™ | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | No | HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 16 ns | 650V | 277.8W Tc | 31.2A | SWITCHING | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 31.2A Tc | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFI4229PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.63mm | ROHS3 Compliant | No | 3 | TO-220-3 | 9.8mm | 4.83mm | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 260 | 40 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 46W | 18 ns | 46W Tc | 19A | SWITCHING | 0.046Ohm | 32 ns | SILICON | N-Channel | 46m Ω @ 11A, 10V | 5V @ 250μA | 4480pF @ 25V | 110nC @ 10V | 17ns | 13 ns | 30V | 250V | 19A Tc | 72A | 110 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| BSL211SPH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | -4.7A | 6 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SOT-23-6 Thin, TSOT-23-6 | 1mm | 1.6mm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Halogen Free | Single | 2W | 8.7 ns | -20V | 2W Ta | 4.7A | SWITCHING | 25 ns | SILICON | P-Channel | 67m Ω @ 4.7A, 4.5V | 1.2V @ 25μA | 654pF @ 15V | 12.4nC @ 10V | 13.9ns | 23.3 ns | 12V | -20V | 4.7A Ta | 20V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| IRF250P225 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 1999 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 313W Tc | N-Channel | 22m Ω @ 41A, 10V | 4V @ 270μA | 4897pF @ 50V | 96nC @ 10V | 69A Tc | 250V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R190CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | 1 | TO-220AB | Halogen Free | Single | 127W | 9.5 ns | 500V | 127W Tc | 18.5A | SWITCHING | 0.19Ohm | 54 ns | SILICON | N-Channel | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 1137pF @ 100V | 47.2nC @ 10V | 8.5ns | 7.5 ns | 20V | 550V | 18.5A Tc | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL1404PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 160A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 15.24mm | 4.69mm | 4MOhm | Through Hole | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 18 ns | 3V | 200W Tc | 94 ns | 160A | SWITCHING | 38 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 3V @ 250μA | 6590pF @ 25V | 140nC @ 5V | 270ns | 37 ns | 20V | 40V | 160A Tc | 640A | 620 mJ | 4.3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPI024N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount, Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10mm | ROHS3 Compliant | Lead Free | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.25mm | 4.4mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | Halogen Free | Single | 250W | 41 ns | 60V | 250W Tc | 120A | SWITCHING | 0.0024Ohm | 79 ns | SILICON | N-Channel | 2.4m Ω @ 100A, 10V | 4V @ 196μA | 23000pF @ 30V | 275nC @ 10V | 80ns | 24 ns | 20V | 60V | 120A Tc | 480A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFP3415PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 43A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 42mOhm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 200W | 12 ns | 4V | 200W Tc | 43A | SWITCHING | 71 ns | SILICON | N-Channel | 42m Ω @ 22A, 10V | 4V @ 250μA | 2400pF @ 25V | 200nC @ 10V | 55ns | 69 ns | 20V | 150V | 150V | 4 V | 43A Tc | 590 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AUIRF3710ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.3mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-XSSO-G2 | FET General Purpose Power | 1 | Single | 160W | 17 ns | 2V | 160W Tc | 59A | SWITCHING | 41 ns | SILICON | N-Channel | 18m Ω @ 35A, 10V | 4V @ 250μA | 2900pF @ 25V | 120nC @ 10V | 77ns | 56 ns | 20V | 100V | 2 V | 59A Tc | 240A | 200 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP60R299CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 11A | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 96W | 10 ns | 600V | 96W Tc | 11A | SWITCHING | 0.299Ohm | 40 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1100pF @ 100V | 29nC @ 10V | 5ns | 20V | 11A Tc | 650V | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF2204SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tube | 2002 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 170A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.572mm | 9.65mm | 3.6mOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 15 ns | 4V | 200W Tc | 170A | SWITCHING | 62 ns | SILICON | N-Channel | 3.6m Ω @ 130A, 10V | 4V @ 250μA | 5890pF @ 25V | 200nC @ 10V | 140ns | 110 ns | 20V | 40V | 40V | 4 V | 75A | 170A Tc | 850A | 460 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
| IPP60R250CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 104W | 40 ns | 600V | 104W Tc | 12A | SWITCHING | 0.25Ohm | 110 ns | SILICON | N-Channel | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 1200pF @ 100V | 35nC @ 10V | 17ns | 12 ns | 20V | 12A Tc | 650V | 40A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP80N08S2L07AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2004 | OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 1 | Halogen Free | 300W | 75V | 300W Tc | 80A | N-Channel | 7.1m Ω @ 80A, 10V | 2V @ 250μA | 5400pF @ 25V | 233nC @ 10V | 80A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R150CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 12.4 ns | 650V | 34.7W Tc | 22.4A | SWITCHING | 0.15Ohm | 52.8 ns | SILICON | N-Channel | 150m Ω @ 9.3A, 10V | 4.5V @ 1mA | 2340pF @ 100V | 86nC @ 10V | 7.6ns | 5.6 ns | 20V | 700V | 22.4A Tc | 72A | 614 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPW90R500C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | 156W Tc | SWITCHING | 0.5Ohm | 900V | SILICON | N-Channel | 500m Ω @ 6.6A, 10V | 3.5V @ 740μA | 1700pF @ 100V | 68nC @ 10V | 11A | 11A Tc | 900V | 24A | 388 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLTS2242TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | Tin | No | 6 | SOT-23-6 | No SVHC | 1.3mm | 1.75mm | 55MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | Single | 2W | 5.8 ns | -400mV | 2W Ta | 6.9A | SWITCHING | 18 ns | SILICON | P-Channel | 32m Ω @ 6.9A, 4.5V | 1.1V @ 10μA | 905pF @ 10V | 12nC @ 4.5V | 18ns | 68 ns | 12V | -20V | 6.9A Ta | 20V | 55A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IPD50R3K0CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 500V | 26W Tc | 1.7A | SWITCHING | 3Ohm | SILICON | N-Channel | 3 Ω @ 400mA, 13V | 3.5V @ 30μA | 84pF @ 100V | 4.3nC @ 10V | 1.7A Tc | 4.1A | 18 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF9335TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 59MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 9.7 ns | -1.8V | 2.5W Ta | -5.4A | SWITCHING | 16 ns | SILICON | P-Channel | 59m Ω @ 5.4A, 10V | 2.4V @ 10μA | 386pF @ 25V | 14nC @ 10V | 19ns | 15 ns | 20V | -30V | -1.8 V | 5.4A Ta | 30V | 43A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF9333TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 19.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 16 ns | -1.8V | 2.5W Ta | -9.2A | SWITCHING | 55 ns | SILICON | P-Channel | 19.4m Ω @ 9.2A, 10V | 2.4V @ 25μA | 1110pF @ 25V | 38nC @ 10V | 44ns | 49 ns | 20V | -30V | -1.8 V | 9.2A Ta | 30V | 75A | 4.5V 10V | ±20V |