English

All Products

View All >>

Infineon Technologies(12661)

Reset
Apply
    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRF7769L1TRPBF IRF7769L1TRPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 Active 1 (Unlimited) 9 EAR99 ROHS3 Compliant Lead Free No 15 DirectFET™ Isometric L8 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 FET General Purpose Power 1 Single DRAIN 3.3W 44 ns 3.3W Ta 125W Tc 124A SWITCHING 0.0035Ohm 92 ns SILICON N-Channel 3.5m Ω @ 74A, 10V 4V @ 250μA 11560pF @ 25V 300nC @ 10V 32ns 41 ns 20V 375A 20A Ta 124A Tc 100V 500A 260 mJ 10V ±20V
    SPB20N60C3ATMA1 SPB20N60C3ATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download Tape & Reel (TR) 2002 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 208W Tc 0.19Ohm 600V SILICON N-Channel 190m Ω @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 114nC @ 10V 20.7A 20.7A Tc 650V 62.1A 690 mJ 10V ±20V
    IRFB4321PBF IRFB4321PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free 83A No 3 TO-220-3 No SVHC 9.02mm 4.82mm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 TO-220AB DRAIN Single 330mW 18 ns 5V 350W Tc 130 ns 83A SWITCHING 25 ns SILICON N-Channel 15m Ω @ 33A, 10V 5V @ 250μA 4460pF @ 50V 110nC @ 10V 60ns 35 ns 30V 150V 150V 5 V 75A 85A Tc 10V ±30V
    IRF7759L2TRPBF IRF7759L2TRPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 9 EAR99 9.144mm ROHS3 Compliant Lead Free No 11 DirectFET™ Isometric L8 No SVHC 508μm 7.112mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N9 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 125W 18 ns 3V 3.3W Ta 125W Tc 26A SWITCHING 0.0023Ohm 80 ns SILICON N-Channel 2.3m Ω @ 96A, 10V 4V @ 250μA 12222pF @ 25V 300nC @ 10V 87ns 33 ns 20V 75V 26A Ta 375A Tc 640A 257 mJ 10V ±20V
    IRF1324PBF IRF1324PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 300W 17 ns 4V 300W Tc 340A SWITCHING 83 ns SILICON N-Channel 1.5m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 190ns 120 ns 20V 24V 24V 4 V 195A Tc 270 mJ 10V ±20V
    IRFB42N20DPBF IRFB42N20DPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 42A No 3 TO-220-3 No SVHC 15.24mm 4.69mm 55Ohm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 18 ns 5.5V 2.4W Ta 330W Tc 330 ns 44A SWITCHING 29 ns SILICON N-Channel 55m Ω @ 26A, 10V 5.5V @ 250μA 3430pF @ 25V 140nC @ 10V 69ns 32 ns 30V 200V 200V 5.5 V 42.6A 44A Tc 10V ±30V
    IRLB3034PBF IRLB3034PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 19.8mm 4.699mm 1.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Not Qualified 1 TO-220AB Single 375W 65 ns 2.5V 375W Tc 195A 175°C SWITCHING 97 ns SILICON N-Channel 1.7m Ω @ 195A, 10V 2.5V @ 250μA 10315pF @ 25V 162nC @ 4.5V 827ns 355 ns 20V 40V 195A Tc 255 mJ 4.5V 10V ±20V
    IRFB52N15DPBF IRFB52N15DPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant Lead Free 51A No 3 TO-220-3 No SVHC 16.51mm 4.82mm 32Ohm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 320W 16 ns 5V 3.8W Ta 230W Tc 210 ns 60A SWITCHING 28 ns SILICON N-Channel 32m Ω @ 36A, 10V 5V @ 250μA 2770pF @ 25V 89nC @ 10V 47ns 25 ns 30V 150V 150V 5 V 51A Tc 240A 470 mJ 10V ±30V
    IRFB7730PBF IRFB7730PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 19.8mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 375W 21 ns 2.1V 375W Tc 195A 175°C 180 ns N-Channel 2.6m Ω @ 100A, 10V 3.7V @ 250μA 13660pF @ 25V 407nC @ 10V 120ns 115 ns 20V 75V 195A Tc 6V 10V ±20V
    SPW11N80C3FKSA1 SPW11N80C3FKSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 18 Weeks Tube 2005 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 156W Tc SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 11A 11A Tc 800V 33A 470 mJ 10V ±20V
    IRFSL4010PBF IRFSL4010PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 4.7MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 375W 21 ns 4V 375W Tc 180A SWITCHING 100 ns SILICON N-Channel 4.7m Ω @ 106A, 10V 4V @ 250μA 9575pF @ 50V 215nC @ 10V 86ns 77 ns 20V 100V 180A Tc 720A 10V ±20V
    IPB017N08N5ATMA1 IPB017N08N5ATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.7mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 375W 40 ns 3V 80V 375W Tc 177A 175°C SWITCHING 102 ns SILICON N-Channel 1.7m Ω @ 100A, 10V 3.8V @ 280μA 16900pF @ 40V 223nC @ 10V 36ns 37 ns 20V 80V 120A Tc 480A 6V 10V ±20V
    IRFB3077PBF IRFB3077PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free 210A No 3 TO-220-3 No SVHC 9.02mm 4.82mm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 370W 25 ns 4V 370W Tc 63 ns 210A SWITCHING 69 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 9400pF @ 50V 220nC @ 10V 87ns 95 ns 20V 75V 75V 4 V 120A Tc 850A 200 mJ 10V ±20V
    IRFP7530PBF IRFP7530PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 15.87mm ROHS3 Compliant Lead Free 3 TO-247-3 No SVHC 20.7mm 5.31mm Through Hole 38.000013g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 341W 52 ns 3.7V 341W Tc 195A 172 ns N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13703pF @ 25V 411nC @ 10V 141ns 104 ns 20V 195A Tc 60V 6V 10V ±20V
    IRFP7430PBF IRFP7430PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2010 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.31mm 1.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 366W 32 ns 2.2V 366W Tc 52 ns 195A SWITCHING 160 ns SILICON N-Channel 1.3m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 105ns 100 ns 20V 40V 195A Tc 722 mJ 6V 10V ±20V
    BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2001 OptiMOS™ Active 1 (Unlimited) 6 EAR99 2.9mm ROHS3 Compliant Contains Lead Tin -6A 6 AVALANCHE RATED SOT-23-6 Thin, TSOT-23-6 No SVHC 1mm 1.6mm Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 Halogen Free Single 2W 9 ns -900mV -20V 2W Ta 6A SWITCHING 42 ns SILICON P-Channel 41m Ω @ 6A, 4.5V 1.2V @ 40μA 1007pF @ 15V 20nC @ 10V 17ns 12V 6A 6A Ta 20V 24A 44 mJ 2.5V 4.5V ±12V
    IRF8721TRPBF IRF8721TRPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 8.2 ns 2.5W Ta 14A SWITCHING 8.1 ns SILICON N-Channel 8.5m Ω @ 14A, 10V 2.35V @ 25μA 1040pF @ 15V 12nC @ 4.5V 11ns 7 ns 20V 30V 2.35 V 14A Ta 4.5V 10V ±20V
    IPA60R125C6XKSA1 IPA60R125C6XKSA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2006 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34W 15 ns 600V 34W Tc 30A SWITCHING 83 ns SILICON N-Channel 125m Ω @ 14.5A, 10V 3.5V @ 960μA 2127pF @ 100V 96nC @ 10V 12ns 7 ns 20V 30A Tc 89A 10V ±20V
    IPD33CN10NGATMA1 IPD33CN10NGATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Halogen Free 58W 11 ns 100V 58W Tc 27A SWITCHING 17 ns SILICON N-Channel 33m Ω @ 27A, 10V 4V @ 29μA 1570pF @ 50V 24nC @ 10V 21ns 4 ns 20V 27A Tc 108A 47 mJ 10V ±20V
    BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 38W 4 ns 150V 38W Tc 13A SWITCHING 0.09Ohm 8 ns SILICON N-Channel 90m Ω @ 10A, 10V 4V @ 20μA 510pF @ 75V 7nC @ 10V 3 ns 20V 13A Tc 52A 30 mJ 8V 10V ±20V
    IRL60B216 IRL60B216 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 Unknown 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 TO-220AB Single 70 ns 2.4V 375W Tc 195A SWITCHING 0.0019Ohm 60V 190 ns SILICON N-Channel 1.9m Ω @ 100A, 10V 2.4V @ 250μA 15570pF @ 25V 258nC @ 4.5V 20V 195A Tc 60V 780A 1045 mJ 4.5V 10V ±20V
    SPD02N80C3ATMA1 SPD02N80C3ATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 2A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 800V MOSFET (Metal Oxide) 42W 25 ns 800V 2.4Ohm PG-TO252-3 42W Tc 2A 65 ns N-Channel 2.7Ohm @ 1.2A, 10V 3.9V @ 120μA 290pF @ 100V 16nC @ 10V 15ns 18 ns 20V 2A Tc 800V 290pF 10V ±20V 2.7 Ω
    SPD18P06PGBTMA1 SPD18P06PGBTMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 18 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AB Not Halogen Free 80W 12 ns -60V 80W Tc 18.6A 24.5 ns SILICON P-Channel 130m Ω @ 13.2A, 10V 4V @ 1mA 860pF @ 25V 33nC @ 10V 5.8ns 11 ns 20V 18.6A Tc 60V 74.4A 10V ±20V
    IPD50P04P413ATMA1 IPD50P04P413ATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 17 ns -40V 58W Tc 50A 0.0126Ohm 22 ns SILICON P-Channel 12.6m Ω @ 50A, 10V 4V @ 85μA 3670pF @ 25V 51nC @ 10V 10ns 28 ns 20V 50A Tc 40V 20A 18 mJ 10V ±20V
    IRF2805STRLPBF IRF2805STRLPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 4.7Ohm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 14 ns 200W Tc 135A SWITCHING 68 ns SILICON N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 75A 135A Tc 700A 10V ±20V
    IRFZ48VPBF IRFZ48VPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free 72A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.82mm 12MOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 150W 7.6 ns 4V 150W Tc 100 ns 72A SWITCHING 157 ns SILICON N-Channel 12m Ω @ 43A, 10V 4V @ 250μA 1985pF @ 25V 110nC @ 10V 200ns 166 ns 20V 60V 60V 4 V 72A Tc 290A 10V ±20V
    IRFS3306TRLPBF IRFS3306TRLPBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 175°C -55°C 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 230W 15 ns 4V 4.2mOhm D2PAK 230W Tc 120A 40 ns N-Channel 4.2mOhm @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 46ns 77 ns 20V 60V 4 V 120A Tc 60V 4.52nF 10V ±20V 4.2 mΩ
    IRLU8743PBF IRLU8743PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 3.1MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 135W 19 ns 1.9V 135W Tc 160A SWITCHING 21 ns SILICON N-Channel 3.1m Ω @ 25A, 10V 2.35V @ 100μA 4880pF @ 15V 59nC @ 4.5V 35ns 17 ns 20V 30V 1.9 V 160A Tc 640A 250 mJ 4.5V 10V ±20V
    IPB65R190CFDATMA1 IPB65R190CFDATMA1 Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 18 Weeks Tape & Reel (TR) 2008 CoolMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 151W Tc SWITCHING 0.19Ohm 650V SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 730μA 1850pF @ 100V 68nC @ 10V 17.5A 17.5A Tc 650V 57.2A 484 mJ 10V ±20V
    IRLIB9343PBF IRLIB9343PBF Infineon Technologies $0.00
    RFQ

    Min: 1

    Mult: 1

    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free -14A No 3 HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 93MOhm Through Hole -40°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-220AB ISOLATED Single 33W 9.5 ns -1V 33W Tc -14A SWITCHING 21 ns SILICON P-Channel 105m Ω @ 3.4A, 10V 1V @ 250μA 660pF @ 50V 47nC @ 10V 24ns 9.5 ns 20V -55V -55V -1 V 14A Tc 55V 60A 4.5V 10V ±20V