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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 6.7 ns 30V 2.1W Ta 48W Tc 15A SWITCHING 0.0057Ohm 26 ns SILICON N-Channel 4.5m Ω @ 20A, 10V 2V @ 250μA 3600pF @ 15V 46nC @ 10V 4.2ns 3.2 ns 20V 40A 15A Ta 40A Tc 70 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead Tin 8 ULTRA LOW RESISTANCE 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-F3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 2V 25V 2.1W Ta 69W Tc 23A SWITCHING 0.0024Ohm SILICON N-Channel 1.8m Ω @ 30A, 10V 2V @ 250μA 2800pF @ 12V 39nC @ 10V 4.4ns 20V 23A Ta 40A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Single 11 ns 125W Tc 76A SWITCHING 0.0084Ohm 75V 51 ns SILICON N-Channel 8.4m Ω @ 46A, 10V 3.7V @ 100μA 4020pF @ 25V 109nC @ 10V 48ns 39 ns 20V 76A Tc 75V 280A 209 mJ 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 10A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 180MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 4 ns 2V 3.8W Ta 48W Tc 160 ns 10A SWITCHING 23 ns SILICON N-Channel 180m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 35ns 22 ns 16V 100V 100V 2 V 10A Tc 85 mJ 4V 10V ±16V
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    		 download 10 Weeks Tape & Reel (TR) 1998 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 79W Tc SWITCHING 0.2Ohm 100V SILICON P-Channel 200m Ω @ 8.4A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 14A 14A Tc 100V 56A 250 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 20 ns 60V 107W Tc 90A 35 ns SILICON N-Channel 5.1m Ω @ 90A, 10V 4V @ 60μA 6500pF @ 25V 81nC @ 10V 5ns 8 ns 20V 90A Tc 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 66W Tc SWITCHING 0.205Ohm 100V SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 13A 13A Tc 100V 52A 194 mJ 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0033Ohm 30V SILICON N-Channel 3.3m Ω @ 15A, 10V 2.3V @ 250μA 4380pF @ 15V 50nC @ 4.5V 30A 161A Tc 30V 620A 1440 mJ 4.5V 10V ±20V
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    		 download 14 Weeks Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.235Ohm 200V SILICON N-Channel 235m Ω @ 8A, 10V 5.5V @ 250μA 830pF @ 25V 38nC @ 10V 13A 13A Tc 200V 52A 130 mJ 10V ±30V
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    		 download 12 Weeks Tube 2003 CoolMOS™ no Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSIP-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 38W Tc SWITCHING 600V SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3.2A 3.2A Tc 650V 9.6A 100 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 16MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 16 ns 4V 110W Tc 47 ns 42A SWITCHING 44 ns SILICON N-Channel 16m Ω @ 32A, 10V 4V @ 100μA 2190pF @ 25V 75nC @ 10V 65ns 29 ns 20V 75V 75V 4 V 42A Tc 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2013 yes Active 1 (Unlimited) 3 EAR99 150°C -55°C ROHS3 Compliant 8-PowerTDFN not_compliant 1.1mm Surface Mount ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED YES S-PDSO-N3 1 1 SINGLE WITH BUILT-IN DIODE DRAIN N-CHANNEL 2.1W 8.5 ns 3.3mOhm 17A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 25.6 ns 20V 60V 60V
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    		 download 13 Weeks Through Hole Tube 2006 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 100W 14 ns 80V 100W Tc 70A SWITCHING 22 ns SILICON N-Channel 10m Ω @ 46A, 10V 3.5V @ 46μA 2410pF @ 40V 35nC @ 10V 46ns 5 ns 20V 70A Tc 280A 90 mJ 6V 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 13 ns 75V 136W Tc 30A 0.0215Ohm 33 ns SILICON N-Channel 21.5m Ω @ 50A, 10V 4V @ 80μA 1400pF @ 25V 57nC @ 10V 30ns 20 ns 20V 30A Tc 120A 240 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 11 ns 600V 28W Tc 7.3A SWITCHING 0.6Ohm 33 ns SILICON N-Channel 600m Ω @ 2.4A, 10V 4.5V @ 200μA 557pF @ 100V 12nC @ 10V 7ns 14 ns 20V 4.9A Tc 18A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 TO-220AB Single 230W 15 ns 3.7V 230W Tc 173A SWITCHING 82 ns SILICON N-Channel 3.3m Ω @ 100A, 10V 3.7V @ 150μA 7020pF @ 25V 210nC @ 10V 105ns 84 ns 20V 60V 173A Tc 700A 554 mJ 6V 10V ±20V
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    		 download 10 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Not For New Designs 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Single 208W Tc 120A N-Channel 2.5m Ω @ 100A, 10V 3.9V @ 100μA 4730pF @ 25V 135nC @ 10V 120A Tc 40V 6V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 700V 42W Tc 4A SWITCHING 2Ohm SILICON N-Channel 2 Ω @ 1A, 10V 3.5V @ 70μA 163pF @ 100V 7.8nC @ 10V Super Junction 4A Tc 6.3A 11 mJ 10V ±20V
    BSC440N10NS3GATMA1 BSC440N10NS3GATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Contains Lead No 8 8-PowerTDFN 1.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 1 Halogen Free 29W 9 ns 2.7mV 100V 44mOhm PG-TDSON-8-1 29W Tc 18A 150°C 13 ns N-Channel 44mOhm @ 12A, 10V 3.5V @ 12μA 810pF @ 50V 10.8nC @ 10V 3ns 20V 100V 5.3A Ta 18A Tc 100V 810pF 6V 10V ±20V 44 mΩ
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    		 download 18 Weeks Through Hole Tube 1997 CoolMOS™ CE yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Full Pack 19.6mm Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 32W 25 ns 800V 32W Tc 5.7A 150°C SWITCHING 0.95Ohm 72 ns SILICON N-Channel 950m Ω @ 3.6A, 10V 3.9V @ 250μA 785pF @ 100V 31nC @ 10V 20V 800V 5.7A Tc 230 mJ 10V ±20V
    IRFHS8342TRPBF IRFHS8342TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No 6 6-PowerVDFN No SVHC 16MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W 5.9 ns 1.8V 2.1W Ta 8.8A SWITCHING 5.2 ns SILICON N-Channel 16m Ω @ 8.5A, 10V 2.35V @ 25μA 600pF @ 25V 8.7nC @ 10V 15ns 5 ns 20V 30V 1.8 V 8.5A 8.8A Ta 19A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8 8-PowerTDFN No SVHC 92mOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED S-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 4V 2.8W Ta 29W Tc 20A SWITCHING 100V SILICON N-Channel 115m Ω @ 6.3A, 10V 4V @ 35μA 760pF @ 50V 26nC @ 10V 3.2A 3.2A Ta 20A Tc 100V 36A 41 mJ 10V ±20V
    IPD50R650CEAUMA1 IPD50R650CEAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 yes Active 3 (168 Hours) 2 EAR99 150°C -55°C ROHS3 Compliant 3 TO-252-3 3.949996g ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 47W 1 DRAIN N-CHANNEL Single 47W 6 ns 650mOhm 6.1A SWITCHING METAL-OXIDE SEMICONDUCTOR 27 ns 5ns 13 ns 20V 500V 500V 342pF 650 mΩ
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    		 download Tape & Reel (TR) 2000 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.08Ohm 55V SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 17A 17A Tc 55V 72A 68 mJ 4V 10V ±16V
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    		 download 12 Weeks Tape & Reel (TR) 2000 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.08Ohm 55V SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 17A 17A Tc 55V 72A 68 mJ 4V 10V ±16V
    BSZ058N03MSGATMA1 BSZ058N03MSGATMA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Not For New Designs 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 30V 2.1W Ta 45W Tc 14A SWITCHING 0.0064Ohm SILICON N-Channel 5m Ω @ 20A, 10V 2V @ 250μA 3100pF @ 15V 40nC @ 10V 3.8ns 20V 40A 14A Ta 40A Tc 55 mJ 4.5V 10V ±20V
    IPD60R2K0C6ATMA1 IPD60R2K0C6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 yes Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 7 ns 600V 22.3W Tc 2.4A SWITCHING 2Ohm 30 ns SILICON N-Channel 2 Ω @ 760mA, 10V 3.5V @ 60μA 140pF @ 100V 6.7nC @ 10V 50 ns 20V 2.4A Tc 6A 10V ±20V
    IRFHM8329TRPBF IRFHM8329TRPBF Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Not For New Designs 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT S-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.6W 14 ns 1.7V 2.6W Ta 33W Tc 16A SWITCHING 14 ns SILICON N-Channel 6.1m Ω @ 20A, 10V 2.2V @ 25μA 1710pF @ 10V 26nC @ 10V 74ns 14 ns 20V 30V 16A Ta 57A Tc 230A 43 mJ 4.5V 10V ±20V
    BSP316PH6327XTSA1 BSP316PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2002 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 4 Other Transistors 1 DRAIN Halogen Free Single 1.8W 4.7 ns -100V 1.8W Ta 680mA 67.4 ns SILICON P-Channel 1.8 Ω @ 680mA, 10V 2V @ 170μA 146pF @ 25V 6.4nC @ 10V 7.5ns 25.9 ns 20V 0.68A 680mA Ta 100V 2.72A 4.5V 10V ±20V
    IPD350N06LGBTMA1 IPD350N06LGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 29A 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Not Halogen Free 68W 1.6V 60V 68W Tc 29A SWITCHING SILICON N-Channel 35m Ω @ 29A, 10V 2V @ 28μA 800pF @ 30V 13nC @ 5V 20V 29A Tc 80 mJ 4.5V 10V ±20V