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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Output Current Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    BSZ0909NSATMA1 BSZ0909NSATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 4.5 ns 30V 2.1W Ta 25W Tc 36A SWITCHING 0.012Ohm 34V 16 ns SILICON N-Channel 12m Ω @ 20A, 10V 2V @ 250μA 1310pF @ 15V 17nC @ 10V 2.2ns 2 ns 20V 9A Ta 36A Tc 34V 144A 9 mJ 4.5V 10V ±20V
    IRFL024NTRPBF IRFL024NTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 4 SMD/SMT EAR99 6.6802mm ROHS3 Compliant Contains Lead, Lead Free 2.8A No 3 AVALANCHE RATED TO-261-4, TO-261AA No SVHC 1.4478mm 3.7mm 75mOhm Surface Mount -55°C~150°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 R-PDSO-G4 1 DRAIN Single 2.1W 8.1 ns 4V 1W Ta 53 ns 2.8A SWITCHING 22.2 ns SILICON N-Channel 75m Ω @ 2.8A, 10V 4V @ 250μA 400pF @ 25V 18.3nC @ 10V 13.4ns 17.7 ns 20V 55V 55V 4 V 0.0028A 2.8A Ta 10V ±20V
    BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2012 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free 6 AVALANCHE RATED SOT-23-6 Thin, TSOT-23-6 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 2W 60V 2W Ta 4.5A SILICON N-Channel 60m Ω @ 4.5A, 10V 2.3V @ 15μA 657pF @ 25V 5.6nC @ 5V 20V 4.5A Ta 4.5V 10V ±20V
    IRFH7914TRPBF IRFH7914TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 3 SMD/SMT EAR99 5.2324mm ROHS3 Compliant Lead Free No 8 8-PowerTDFN No SVHC 1.1684mm 6.1468mm 8.7MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 IRFH7914 R-PDSO-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W 11 ns 1.8V 3.1W Ta 35A SWITCHING 12 ns SILICON N-Channel 8.7m Ω @ 14A, 10V 2.35V @ 25μA 1160pF @ 15V 12nC @ 4.5V 11ns 4.6 ns 20V 30V 30V 1.8 V 15A Ta 35A Tc 4.5V 10V ±20V
    BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 ESD PROTECTED 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40W 11 ns -2.5V -30V 2.1W Ta 40W Tc 39.5A SWITCHING 20 ns SILICON P-Channel 18m Ω @ 20A, 10V 3.1V @ 48μA 2220pF @ 15V 30nC @ 10V 11ns 3 ns 25V 9A 9A Ta 39.5A Tc 30V 6V 10V ±25V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W Tc SWITCHING 0.21Ohm 100V SILICON N-Channel 210m Ω @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 9.4A 9.4A Tc 100V 38A 91 mJ 10V ±20V
    IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 6.1W Tc SWITCHING 800V SILICON N-Channel 3.3 Ω @ 590mA, 10V 3.5V @ 30μA 120pF @ 500V 5.8nC @ 10V 1.9A Tc 800V 10V ±20V
    IPD220N06L3GBTMA1 IPD220N06L3GBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Tin 3 LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Single 36W 9 ns 36W Tc 30A SWITCHING 0.022Ohm 19 ns SILICON N-Channel 22m Ω @ 30A, 10V 2.2V @ 11μA 1600pF @ 30V 10nC @ 4.5V 3ns 20V 60V 30A Tc 120A 4.5V 10V ±20V
    IRF7205TRPBF IRF7205TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free -5.3A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 70mOhm Surface Mount -55°C~150°C TJ -30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 Other Transistors 1 Single 2.5W 14 ns -3V 2.5W Tc 100 ns -4.6A SWITCHING 97 ns SILICON P-Channel 70m Ω @ 4.6A, 10V 3V @ 250μA 870pF @ 10V 40nC @ 10V 21ns 71 ns 20V -30V -30V -3 V 4.6A Ta 30V 4.5V 10V ±20V
    BSP322PH6327XTSA1 BSP322PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2012 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 DRAIN Halogen Free Single 1.8W 4.6 ns -100V 1.8W Ta 1A 0.8Ohm 21.2 ns SILICON P-Channel 800m Ω @ 1A, 10V 1V @ 380μA 372pF @ 25V 16.5nC @ 10V 4.3ns 8.3 ns 20V 1A 1A Tc 100V 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -5.3A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 60mOhm Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 5.3A Single 2.5W 14 ns -2.5V 2.5W Tc 100 ns -5.3A SWITCHING 100 ns SILICON P-Channel 60m Ω @ 5.3A, 10V 2.5V @ 250μA 860pF @ 10V 25nC @ 10V 26ns 68 ns 12V -20V -20V -2.5 V 5.3A Ta 20V 4.5V 10V ±12V
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    		 download 26 Weeks Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 YES R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W Ta 45W Tc SWITCHING 0.0072Ohm 30V SILICON N-Channel 5.7m Ω @ 30A, 10V 2V @ 250μA 3100pF @ 15V 40nC @ 10V 15A 15A Ta 71A Tc 30V 284A 25 mJ 4.5V 10V ±16V
    IPD30N03S4L14ATMA1 IPD30N03S4L14ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 3 ns 30V 31W Tc 30A 12 ns SILICON N-Channel 13.6m Ω @ 30A, 10V 2.2V @ 10μA 980pF @ 25V 14nC @ 10V 2ns 16V 30A Tc 120A 16 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 13 ns 2V 140W Tc 62A SWITCHING 28 ns SILICON N-Channel 13.5m Ω @ 37A, 10V 4V @ 100μA 3180pF @ 50V 87nC @ 10V 32ns 20V 2 V 62A Tc 100V 250A 10V ±20V
    IPP80N03S4L03AKSA1 IPP80N03S4L03AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2007 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 14 ns 30V 136W Tc 80A 0.0027Ohm 62 ns SILICON N-Channel 2.7m Ω @ 80A, 10V 2.2V @ 90μA 9750pF @ 25V 140nC @ 10V 9ns 13 ns 16V 80A Tc 260 mJ 4.5V 10V ±16V
    IPP60R360P7XKSA1 IPP60R360P7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 yes Active 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 41W Tc SWITCHING 0.36Ohm 600V SILICON N-Channel 360m Ω @ 2.7A, 10V 4V @ 140μA 555pF @ 400V 13nC @ 10V 9A Tc 650V 26A 27 mJ 10V ±20V
    IRFP150MPBF IRFP150MPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 16.129mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 21.1mm 4.826mm 36MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC Single 160W 11 ns 4V 160W Tc 42A SWITCHING 45 ns SILICON N-Channel 36m Ω @ 23A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 56ns 40 ns 20V 100V 4 V 42A Tc 140A 420 mJ 10V ±20V
    IPAW60R190CEXKSA1 IPAW60R190CEXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack No SVHC Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3V 34W Tc 26.7A N-Channel 190m Ω @ 9.5A, 10V 3.5V @ 630μA 1400pF @ 100V 63nC @ 10V Super Junction 26.7A Tc 600V 10V ±20V
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    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 32W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 4.6A, 10V 3.9V @ 250μA 790pF @ 25V 27nC @ 10V 7.3A 7.3A Tc 650V 21.9A 230 mJ 10V ±20V
    IPA057N08N3GXKSA1 IPA057N08N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 39W 17 ns 80V 39W Tc 60A SWITCHING 0.0057Ohm 36 ns SILICON N-Channel 5.7m Ω @ 60A, 10V 3.5V @ 90μA 4750pF @ 40V 69nC @ 10V 42ns 9 ns 20V 60A Tc 240A 290 mJ 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 80A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 15Ohm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 260W 15 ns 4V 260W Tc 150 ns 80A SWITCHING 61 ns SILICON N-Channel 15m Ω @ 45A, 10V 4V @ 250μA 3830pF @ 25V 120nC @ 10V 130ns 120 ns 20V 100V 100V 4 V 75A 80A Tc 10V ±20V
    IRFB3307ZPBF IRFB3307ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.66mm ROHS3 Compliant Lead Free Tin 120A No 3 TO-220-3 No SVHC 9.02mm 4.82mm 5.8MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230mW 15 ns 4V 230W Tc 33 ns 120A SWITCHING 38 ns SILICON N-Channel 5.8m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 64ns 65 ns 20V 75V 75V 4 V 120A Tc 480A 10V ±20V
    IRFB7434PBF IRFB7434PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 1.6MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 294W 24 ns 3V 294W Tc 38 ns 195A SWITCHING 115 ns SILICON N-Channel 1.6m Ω @ 100A, 10V 3.9V @ 250μA 10820pF @ 25V 324nC @ 10V 68ns 20V 40V 3 V 195A Tc 490 mJ 6V 10V ±20V
    IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 136W 19 ns 120V 136W Tc 75A SWITCHING 30 ns SILICON N-Channel 11.4m Ω @ 75A, 10V 4V @ 83μA 4310pF @ 60V 65nC @ 10V 36ns 7 ns 20V 75A Tc 300A 10V ±20V
    IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 11 ns 650V 104.2W Tc 11.4A SWITCHING 45 ns SILICON N-Channel 310m Ω @ 4.4A, 10V 4.5V @ 440μA 1100pF @ 100V 41nC @ 10V 7.5ns 7 ns 20V 11.4A Tc 290 mJ 10V ±20V
    IRL3803PBF IRL3803PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 140A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 6mOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 150W 14 ns 1V 200W Tc 180 ns 140A SWITCHING 29 ns SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 230ns 35 ns 16V 30V 30V 1 V 140A Tc 470A 4.5V 10V ±16V
    IPP80P03P4L04AKSA1 IPP80P03P4L04AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 17 ns -30V 137W Tc 80A 0.007Ohm 140 ns SILICON P-Channel 4.4m Ω @ 80A, 10V 2V @ 253μA 11300pF @ 25V 160nC @ 10V 11ns 40 ns 5V 80A Tc 30V 410 mJ 4.5V 10V +5V, -16V
    IRFP3710PBF IRFP3710PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Bulk 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free 57A No 3 AVALANCHE RATED TO-247-3 No SVHC 24.99mm 5.3mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 1 TO-247AC DRAIN Single 180W 14 ns 2V 200W Tc 320 ns 57A 175°C SWITCHING 0.025Ohm 58 ns SILICON N-Channel 25m Ω @ 28A, 10V 4V @ 250μA 3000pF @ 25V 190nC @ 10V 59ns 48 ns 20V 100V 100V 4 V 57A Tc 10V ±20V
    IRFB5620PBF IRFB5620PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 Active 1 (Unlimited) Through Hole 175°C -55°C 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 72.5MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 144W 8.6 ns 5V 72.5mOhm TO-220AB 144W Tc 25A 17.1 ns N-Channel 72.5mOhm @ 15A, 10V 5V @ 100μA 1710pF @ 50V 38nC @ 10V 14.6ns 9.9 ns 20V 200V 200V 5 V 25A Tc 200V 1.71nF 10V ±20V 72.5 mΩ
    IRFP9140NPBF IRFP9140NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Bulk 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Contains Lead, Lead Free -23A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 20.3mm 5.3mm 117mOhm Through Hole -55°C~175°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 Other Transistors 1 TO-247AC DRAIN Single 120W 15 ns -4V 140W Tc 220 ns -23A SWITCHING 51 ns SILICON P-Channel 117m Ω @ 13A, 10V 4V @ 250μA 1300pF @ 25V 97nC @ 10V 67ns 20V -100V -100V -4 V 23A Tc 100V 76A 10V ±20V