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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Power - Max Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    SPP80P06PHXKSA1 SPP80P06PHXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 1999 SIPMOS® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 340W 24 ns -60V 340W Tc 80A 56 ns SILICON P-Channel 23m Ω @ 64A, 10V 4V @ 5.5mA 5033pF @ 25V 173nC @ 10V 18ns 30 ns 20V 80A Tc 60V 10V ±20V
    IRFB4710PBF IRFB4710PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 ROHS3 Compliant Lead Free 75A No 3 TO-220-3 No SVHC 8.77mm 14mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 200W 35 ns 5.5V 3.8W Ta 200W Tc 110 ns 75A SWITCHING 41 ns SILICON N-Channel 14m Ω @ 45A, 10V 5.5V @ 250μA 6160pF @ 25V 170nC @ 10V 130ns 38 ns 20V 100V 100V 5.5 V 75A Tc 10V ±20V
    IRF1404LPBF IRF1404LPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 162A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.652mm 4.826mm 4mOhm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power 1 DRAIN Single 200W 17 ns 4V 3.8W Ta 200W Tc 162A SWITCHING 72 ns SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 140ns 26 ns 20V 40V 4 V 75A 162A Tc 650A 10V ±20V
    IPB200N25N3GATMA1 IPB200N25N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 300W 18 ns 250V 300W Tc 64A SWITCHING 0.02Ohm 45 ns SILICON N-Channel 20m Ω @ 64A, 10V 4V @ 270μA 7100pF @ 100V 86nC @ 10V 20ns 12 ns 20V 64A Tc 256A 10V ±20V
    IRF7504TRPBF IRF7504TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Not For New Designs 2 (1 Year) 8 3mm ROHS3 Compliant Lead Free Tin -1.7A No 8 LOGIC LEVEL COMPATIBLE 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) No SVHC 860μm 3mm 270mOhm Surface Mount -55°C~150°C TJ -20V ENHANCEMENT MODE e3 GULL WING IRF7504PBF 1.25W 2 Dual 1.25W 9.1 ns -700mV -1.7A SWITCHING METAL-OXIDE SEMICONDUCTOR 38 ns SILICON 2 P-Channel (Dual) 270m Ω @ 1.2A, 4.5V 700mV @ 250μA 240pF @ 15V 8.2nC @ 4.5V 35ns 43 ns 12V -20V Logic Level Gate 1.7A 20V 9.6A
    IRF7907TRPBF IRF7907TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING 260 30 IRF7907PBF FET General Purpose Power 2W 2 Dual 2W 11A METAL-OXIDE SEMICONDUCTOR SILICON 2 N-Channel (Dual) 16.4m Ω @ 9.1A, 10V 2.35V @ 25μA 850pF @ 15V 10nC @ 4.5V 20V 30V Logic Level Gate 9.1A 11A 15 mJ
    IPG20N04S4L07ATMA1 IPG20N04S4L07ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Contains Lead 8 LOGIC LEVEL COMPATIBLE 8-PowerVDFN not_compliant Surface Mount -55°C~175°C TJ ENHANCEMENT MODE e3 Tin (Sn) FLAT NOT SPECIFIED NOT SPECIFIED 65W 65W 2 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE Halogen Free 9 ns 40V 20A 0.0072Ohm METAL-OXIDE SEMICONDUCTOR 50 ns SILICON 2 N-Channel (Dual) 7.2m Ω @ 17A, 10V 2.2V @ 30μA 3980pF @ 25V 50nC @ 10V 4ns 25 ns 16V Logic Level Gate 230 mJ
    IRF7342TRPBF IRF7342TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -3.4A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 105mOhm Surface Mount -55°C~150°C TJ -55V ENHANCEMENT MODE GULL WING IRF7342PBF 2 2W 2 6.3 mm Dual 2W 14 ns -1V 80 ns -3.4A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 43 ns SILICON 2 P-Channel (Dual) 105m Ω @ 3.4A, 10V 1V @ 250μA 690pF @ 25V 38nC @ 10V 10ns 22 ns 20V -55V Logic Level Gate -1 V 3.4A 55V 114 mJ
    IRF7105TRPBF IRF7105TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 3.5A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 100mOhm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING IRF7105PBF 2 2W 2 N-CHANNEL AND P-CHANNEL 2W 7 ns 1V 3.5A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 45 ns SILICON N and P-Channel 100m Ω @ 1A, 10V 3V @ 250μA 330pF @ 15V 27nC @ 10V 13ns 37 ns 20V 25V Standard 3 V 3.5A 2.3A 14A
    IRF7306TRPBF IRF7306TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free Tin -3.6A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 4.05mm 100mOhm Surface Mount -55°C~150°C TJ -30V ENHANCEMENT MODE e3 GULL WING IRF7306PBF 2 2W 2 6.3 mm Dual 2W 11 ns -1V 80 ns -3.6A 150°C SWITCHING METAL-OXIDE SEMICONDUCTOR 25 ns SILICON 2 P-Channel (Dual) 100m Ω @ 1.8A, 10V 1V @ 250μA 440pF @ 25V 25nC @ 10V 17ns 18 ns 20V -30V Logic Level Gate -1 V 3.6A 30V 14A
    IRLML6246TRPBF IRLML6246TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 3.0226mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.016mm 1.397mm 46MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 1.3W 3.6 ns 12V 1.3W Ta 13 ns 4.1A SWITCHING 11 ns SILICON N-Channel 46m Ω @ 4.1A, 4.5V 1.1V @ 5μA 290pF @ 16V 3.5nC @ 4.5V 4.9ns 6 ns 12V 20V 4.1A Ta 2.5V 4.5V ±12V
    BSS315PH6327XTSA1 BSS315PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 No SVHC 1mm 1.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 3 1 Halogen Free Single 500mW 5 ns -30V 500mW Ta 1.18A 14.3 ns SILICON P-Channel 150m Ω @ 1.5A, 10V 2V @ 11μA 282pF @ 15V 2.3nC @ 5V 6.5ns 20V 1.5A Ta 30V 84 pF 4.5V 10V ±20V
    BSS123NH6327XTSA1 BSS123NH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2012 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free No 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 1.1mm 1.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 260 30 3 1 1 Halogen Free Single 500mW 2.3 ns 100V 500mW Ta 190mA 150°C 6Ohm 7.4 ns SILICON N-Channel 6 Ω @ 190mA, 10V 1.8V @ 13μA 20.9pF @ 25V 0.9nC @ 10V 3.2ns 22 ns 20V 100V 190mA Ta 4.5V 10V ±20V
    IPB180N08S402ATMA1 IPB180N08S402ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30 ns 80V 277W Tc 180A 0.0022Ohm 50 ns SILICON N-Channel 2.2m Ω @ 100A, 10V 4V @ 220μA 11550pF @ 25V 167nC @ 10V 15ns 20V 180A Tc 640 mJ 10V ±20V
    IPP100N08S2L07AKSA1 IPP100N08S2L07AKSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Tube 2006 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 19 ns 75V 300W Tc 100A 0.0068Ohm 85 ns SILICON N-Channel 6.8m Ω @ 80A, 10V 2V @ 250μA 5400pF @ 25V 246nC @ 10V 56ns 22 ns 20V 100A Tc 400A 810 mJ 4.5V 10V ±20V
    IPB65R095C7ATMA2 IPB65R095C7ATMA2 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) CoolMOS™ C7 Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 128W Tc N-Channel 95m Ω @ 11.8A, 10V 4V @ 590μA 2140pF @ 400V 45nC @ 10V 24A Tc 650V 10V ±20V
    IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2013 CoolMOS™ yes Active Not Applicable 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 13W Tc 1.5A SWITCHING 4.5Ohm 800V SILICON N-Channel 1.4 Ω @ 1.4A, 10V 3.5V @ 200μA 250pF @ 500V 4nC @ 10V Super Junction 1.5A Tc 800V 2.6A 1 mJ 10V ±20V
    SPD15P10PGBTMA1 SPD15P10PGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2007 Automotive, AEC-Q101, SIPMOS® no Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Contains Lead, Lead Free 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant 2.41mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Not Halogen Free Single 128W 9.5 ns -100V 128W Tc 15A 0.24Ohm 33 ns SILICON P-Channel 240m Ω @ 10.6A, 10V 2.1V @ 1.54mA 1280pF @ 25V 48nC @ 10V 23ns 16 ns 20V -100V -3 V 15A Tc 100V 60A 10V ±20V
    IRFU120NPBF IRFU120NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.6mm ROHS3 Compliant Contains Lead, Lead Free 9.4A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 9.75mm 2.3mm 210mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power Not Qualified 1 DRAIN Single 48W 4.5 ns 4V 48W Tc 150 ns 9.4A 175°C SWITCHING 32 ns SILICON N-Channel 210m Ω @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 20V 100V 100V 4 V 7.7A 9.4A Tc 10V ±20V
    IPB029N06N3GATMA1 IPB029N06N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 188W 35 ns 3V 188W Tc 120A SWITCHING 60V 62 ns SILICON N-Channel 2.9m Ω @ 100A, 10V 4V @ 118μA 13000pF @ 30V 165nC @ 10V 120ns 20 ns 20V 120A Tc 60V 480A 10V ±20V
    IPB60R280C6ATMA1 IPB60R280C6ATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 104W 13 ns 600V 104W Tc 13.8A SWITCHING 0.28Ohm 100 ns SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 11ns 12 ns 20V 13.8A Tc 40A 284 mJ 10V ±20V
    IRFU6215PBF IRFU6215PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free -13A No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 580MOhm Through Hole -55°C~175°C TJ -150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 Other Transistors 1 DRAIN Single 110W 14 ns -4V 110W Tc -13A SWITCHING 53 ns SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V -150V -4 V 13A Tc 150V 44A 10V ±20V
    IPA80R650CEXKSA2 IPA80R650CEXKSA2 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 800V 33W Tc 8A SWITCHING 0.65Ohm SILICON N-Channel 650m Ω @ 5.1A, 10V 3.9V @ 470μA 1100pF @ 100V 45nC @ 10V 8A 8A Ta 24A 340 mJ 10V ±20V
    IPB108N15N3GATMA1 IPB108N15N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 214W 17 ns 3V 150V 214W Tc 83A SWITCHING 32 ns SILICON N-Channel 10.8m Ω @ 83A, 10V 4V @ 160μA 3230pF @ 75V 55nC @ 10V 35ns 9 ns 20V 83A Tc 8V 10V ±20V
    IRF2204PBF IRF2204PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free Tin 210A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 3.6Ohm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-220AB DRAIN Single 330W 15 ns 4V 330W Tc 210A SWITCHING 62 ns SILICON N-Channel 3.6m Ω @ 130A, 10V 4V @ 250μA 5890pF @ 25V 200nC @ 10V 140ns 110 ns 20V 40V 40V 4 V 75A 210A Tc 850A 460 mJ 10V ±20V
    IPP60R090CFD7XKSA1 IPP60R090CFD7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 125W Tc N-Channel 90m Ω @ 11.4A, 10V 4.5V @ 570μA 2103pF @ 400V 51nC @ 10V 25A Tc 600V 10V ±20V
    IPP034N03LGXKSA1 IPP034N03LGXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 94W 9.2 ns 30V 94W Tc 80A SWITCHING 0.0047Ohm 35 ns SILICON N-Channel 3.4m Ω @ 30A, 10V 2.2V @ 250μA 5300pF @ 15V 51nC @ 10V 6.4ns 5.4 ns 20V 80A Tc 400A 70 mJ 4.5V 10V ±20V
    BSC097N06NSTATMA1 BSC097N06NSTATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 3W Ta 43W Tc SWITCHING 0.0097Ohm 60V SILICON N-Channel 9.7m Ω @ 40A, 10V 3.3V @ 14μA 1075pF @ 30V 15nC @ 10V 12A 13A Ta 48A Tc 60V 184A 13 mJ 6V 10V ±20V
    IRFB3607PBF IRFB3607PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.017mm 4.82mm 9MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 16 ns 4V 140W Tc 50 ns 80A SWITCHING 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A Tc 10V ±20V
    SPD50P03LGBTMA1 SPD50P03LGBTMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2007 OptiMOS™ no Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-5, DPak (4 Leads + Tab), TO-252AD not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc 0.007Ohm 30V SILICON P-Channel 7m Ω @ 50A, 10V 2V @ 250μA 6880pF @ 25V 126nC @ 10V 50A 50A Tc 30V 200A 256 mJ 10V ±20V