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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFR3704ZPBF IRFR3704ZPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm RoHS Compliant Lead Free Tin 60A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 48W 41 ns 2.1V 48W Tc 19 ns 60A SWITCHING 0.0084Ohm 4.9 ns SILICON N-Channel 8.4m Ω @ 15A, 10V 2.55V @ 250μA 1190pF @ 10V 14nC @ 4.5V 8.9ns 12 ns 20V 20V 60A Tc 240A 4.5V 10V ±20V
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    		 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 9.4mOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 18 ns 4V 170W Tc 75A SWITCHING 40 ns SILICON N-Channel 9.4m Ω @ 53A, 10V 4V @ 250μA 3270pF @ 25V 110nC @ 10V 79ns 45 ns 20V 75V 75V 4 V 89A 75A Tc 10V ±20V
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    		 download 14 Weeks Tube 2003 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 200W Tc N-Channel 26m Ω @ 29A, 10V 2V @ 250μA 3700pF @ 25V 140nC @ 5V 55A Tc 100V 4V 10V ±16V
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.6172mm RoHS Compliant Lead Free 67A No 3 TO-220-3 Full Pack No SVHC 16.12mm 4.826mm 6MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 48W 14 ns 9mOhm TO-220AB Full-Pak 63W Tc 76A 29 ns N-Channel 6mOhm @ 40A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 230ns 35 ns 16V 30V 1 V 76A Tc 30V 5nF 4.5V 10V ±16V 6 mΩ
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.004Ohm 40V SILICON N-Channel 4m Ω @ 95A, 10V 3V @ 250μA 6600pF @ 25V 140nC @ 5V 160A 160A Tc 40V 640A 520 mJ 4.3V 10V ±20V
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    		 download 20 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.295Ohm 150V SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 44A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.3876mm 27mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 69W 7.3 ns 107W Tc 44A SWITCHING 47 ns SILICON N-Channel 27m Ω @ 26A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 69ns 60 ns 20V 55V 20A 44A Tc 160A 210 mJ 10V ±20V
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    		 download 14 Weeks Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 86W Tc SWITCHING 0.38Ohm 200V SILICON N-Channel 380m Ω @ 5.6A, 10V 5.5V @ 250μA 560pF @ 25V 27nC @ 10V 9.4A 9.4A Tc 200V 38A 100 mJ 10V ±30V
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    		 download 14 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 17 ns 4V 140W Tc 42A SWITCHING 0.0075Ohm 42 ns SILICON N-Channel 7.5m Ω @ 42A, 10V 4V @ 100μA 2840pF @ 25V 95nC @ 10V 76ns 48 ns 20V 55V 55V 4 V 42A Tc 220 mJ 10V ±20V
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    		 download 20 Weeks Tube 1999 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED TO-261-4, TO-261AA not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W Ta SWITCHING 0.075Ohm 55V SILICON N-Channel 75m Ω @ 2.8A, 10V 4V @ 250μA 400pF @ 25V 18.3nC @ 10V 2.8A 2.8A Ta 55V 10V ±20V
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    		 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.8W Ta N-Channel 185m Ω @ 1.6A, 10V 5V @ 250μA 420pF @ 25V 19nC @ 10V 2.6A Ta 150V 10V ±30V
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    		 download 16 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 42A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA 6.223mm 2.3876mm 8MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 130W 17 ns 130W Tc 42A SWITCHING 33 ns SILICON N-Channel 8m Ω @ 42A, 10V 3V @ 250μA 2900pF @ 25V 66nC @ 5V 150ns 70 ns 16V 55V 89A 42A Tc 4.5V 10V ±16V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 170W Tc SWITCHING 0.012Ohm 55V SILICON N-Channel 10m Ω @ 46A, 10V 2V @ 250μA 3600pF @ 25V 98nC @ 5V 89A 89A Tc 55V 310A 340 mJ 4V 10V ±16V
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    		 download 20 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3W Ta 110W Tc N-Channel 39m Ω @ 18A, 10V 4V @ 250μA 1690pF @ 25V 56nC @ 10V 31A Tc 100V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) EAR99 4.9784mm ROHS3 Compliant Lead Free 19A No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm 4.5MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) FET General Purpose Power 1 Single 2.5W 13.7 ns 2.5W Ta 19A 18 ns N-Channel 4.5m Ω @ 19A, 10V 2.25V @ 250μA 3710pF @ 15V 44nC @ 4.5V 14.3ns 5 ns 20V 30V 19A Ta 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 6.2A 6.2A Ta 40V 4.5V 10V ±20V
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    		 download Through Hole Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 80A AVALANCHE RATED TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN 260 40 3 R-PSIP-T3 FET General Purpose Power Not Qualified 1 Single 105W 105W Tc 80A SWITCHING 0.0079Ohm 39 ns SILICON N-Channel 7.9m Ω @ 43A, 10V 2.2V @ 55μA 6475pF @ 25V 134nC @ 10V 35ns 25 ns 16V 55V 80A Tc 320A 5V 10V ±16V
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    		 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free 75A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 6.5MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 170W 18 ns 6.5mOhm D2PAK 170W Tc 75A 45 ns N-Channel 6.5mOhm @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 95ns 67 ns 20V 55V 75A Tc 55V 3.45nF 10V ±20V 6.5 mΩ
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    		 download Surface Mount Tape & Reel (TR) 2003 OptiMOS™ Obsolete 1 (Unlimited) RoHS Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 300W Tc 80A N-Channel 3.1m Ω @ 80A, 10V 4V @ 250μA 7020pF @ 25V 150nC @ 10V 80A Tc 30V 10V ±20V
    SPI08N80C3XKSA1 SPI08N80C3XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 8A 3 AVALANCHE RATED, HIGH VOLTAGE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 104W 25 ns 800V 104W Tc 8A SWITCHING 0.65Ohm 65 ns SILICON N-Channel 650m Ω @ 5.1A, 10V 3.9V @ 470μA 1100pF @ 100V 60nC @ 10V 15ns 7 ns 20V 8A 8A Tc 24A 10V ±20V
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    		 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 417W Tc 0.07Ohm 500V SILICON N-Channel 70m Ω @ 30A, 10V 3.9V @ 2.7mA 6800pF @ 25V 290nC @ 10V 52A 52A Tc 560V 156A 1800 mJ 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2004 CoolMOS™ Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant Contains Lead 700mA 3 TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 1.8W Ta 700mA SWITCHING 64 ns SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3ns 3 ns 20V 650V 3 V 0.7A 700mA Ta 3A 10V ±20V
    BSO119N03S BSO119N03S Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) 8 SMD/SMT EAR99 RoHS Compliant Lead Free 9A 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 16.3mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN DUAL GULL WING 260 40 8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 1.56W 1.6V 1.56W Ta 9A SWITCHING 18 ns SILICON N-Channel 11.9m Ω @ 11A, 10V 2V @ 25μA 1730pF @ 15V 13nC @ 5V 3.8ns 3.8 ns 20V 30V 30V 1.6 V 9A 9A Ta 93 pF 4.5V 10V ±20V
    BSP171PL6327HTSA1 BSP171PL6327HTSA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 SIPMOS® yes Obsolete 1 (Unlimited) 4 EAR99 RoHS Compliant No 4 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 4 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 6 ns 1.8W Ta 1.9A SWITCHING 0.3Ohm 60V 208 ns SILICON P-Channel 300m Ω @ 1.9A, 10V 2V @ 460μA 460pF @ 25V 20nC @ 10V 25ns 87 ns 20V 1.9A Ta 60V 55 pF 4.5V 10V ±20V
    SPB16N50C3ATMA1 SPB16N50C3ATMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2005 CoolMOS™ no Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 160W Tc SWITCHING 0.28Ohm 500V SILICON N-Channel 280m Ω @ 10A, 10V 3.9V @ 675μA 1600pF @ 25V 66nC @ 10V 16A 16A Tc 560V 48A 460 mJ 10V ±20V
    IRFB3407ZPBF IRFB3407ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Single 230W Tc 120A N-Channel 6.4m Ω @ 75A, 10V 4V @ 150μA 4750pF @ 50V 110nC @ 10V 120A Tc 75V 10V ±20V
    IPB050N06NGATMA1 IPB050N06NGATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2007 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE GULL WING 260 40 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 300W Tc 100A SWITCHING 0.0047Ohm 60V SILICON N-Channel 4.7m Ω @ 100A, 10V 4V @ 270μA 6100pF @ 30V 167nC @ 10V 20V 100A Tc 60V 400A 10V ±20V
    IPD65R380E6ATMA1 IPD65R380E6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ E6 Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 10 ns 650V 83W Tc 10.6A SWITCHING 57 ns SILICON N-Channel 380m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V 7ns 8 ns 20V 10.6A Tc 29A 215 mJ 10V ±20V
    IPD90N04S304ATMA1 IPD90N04S304ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 136W Tc 0.0036Ohm 40V SILICON N-Channel 3.6m Ω @ 80A, 10V 4V @ 90μA 5200pF @ 25V 80nC @ 10V 90A 90A Tc 40V 360A 260 mJ 10V ±20V
    IRL3713STRRPBF IRL3713STRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 330W 16 ns 330W Tc 260A SWITCHING 40 ns SILICON N-Channel 3m Ω @ 38A, 10V 2.5V @ 250μA 5890pF @ 15V 110nC @ 4.5V 160ns 57 ns 20V 30V 75A 260A Tc 4.5V 10V ±20V