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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRL2203NPBF IRL2203NPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 116A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 7MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 11 ns 1V 180W Tc 84 ns 116A SWITCHING 23 ns SILICON N-Channel 7m Ω @ 60A, 10V 1V @ 250μA 3290pF @ 25V 60nC @ 4.5V 160ns 66 ns 16V 30V 30V 1 V 75A 116A Tc 400A 290 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 6.5mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 170W 18 ns 4V 170W Tc 42 ns 75A SWITCHING 45 ns SILICON N-Channel 6.5m Ω @ 66A, 10V 4V @ 250μA 3450pF @ 25V 110nC @ 10V 95ns 67 ns 20V 55V 55V 4 V 75A Tc 440A 250 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 33A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm 44MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 130W 11 ns 4V 130W Tc 33A SWITCHING 39 ns SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 35ns 35 ns 20V 100V 4 V 33A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 19.8mm 4.82mm 9MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 1 FET General Purpose Power 1 TO-220AB DRAIN Single 230W 16 ns 2V 230W Tc 57 ns 96A 175°C SWITCHING 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 100V 4 V 97A 97A Tc 242 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free 140A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 16 ns 1V 200W Tc 140A SWITCHING 0.0055Ohm 29 ns SILICON N-Channel 5.5m Ω @ 71A, 10V 1V @ 250μA 3720pF @ 25V 76nC @ 4.5V 180ns 37 ns 16V 30V 75A 140A Tc 470A 400 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 1.95MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 36 ns 1.9V 230W Tc 36 ns 260A SWITCHING 33 ns SILICON N-Channel 1.95m Ω @ 60A, 10V 2.35V @ 150μA 8420pF @ 15V 86nC @ 4.5V 170ns 60 ns 20V 30V 30V 1.9 V 120A 260A Tc 1050A 520 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 89A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 12mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 12 ns 2V 170W Tc 140 ns 89A SWITCHING 37 ns SILICON N-Channel 10m Ω @ 46A, 10V 2V @ 250μA 3600pF @ 25V 98nC @ 5V 140ns 78 ns 16V 55V 55V 2 V 77A 89A Tc 4V 10V ±16V
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    		 download 20 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 8 ULTRA LOW RESISTANCE 8-PowerSFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FLAT NOT SPECIFIED NOT SPECIFIED R-PSSO-F2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 300W Tc 300A 0.00115Ohm SILICON N-Channel 1.15m Ω @ 100A, 10V 4V @ 125μA 12090pF @ 25V 151nC @ 10V 300A Tc 1200A 300 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6172mm ROHS3 Compliant Lead Free 30A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 38W 7.3 ns 4V 45W Tc 98 ns 31A SWITCHING 0.024Ohm 2.5kV 47 ns SILICON N-Channel 24m Ω @ 17A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 69ns 60 ns 20V 55V 55V 4 V 31A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 StrongIRFET™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 TO-252AA DRAIN Single 8.1 ns 3.7V 99W Tc 56A SWITCHING 0.0079Ohm 60V 36 ns SILICON N-Channel 7.9m Ω @ 43A, 10V 3.7V @ 100μA 3020pF @ 25V 87nC @ 10V 28ns 20 ns 20V 56A Tc 60V 280A 6V 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 136W 10 ns 250V 136W Tc 25A SWITCHING 0.06Ohm 22 ns SILICON N-Channel 60m Ω @ 25A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 8 ns 20V 25A Tc 10V ±20V
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    		 download 13 Weeks Tape & Reel (TR) 2013 OptiMOS™ 3 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc 0.011Ohm 200V SILICON N-Channel 11m Ω @ 88A, 10V 4.2V @ 260μA 650pF @ 100V 76nC @ 10V 11A 88A Tc 200V 352A 560 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.82mm 46MOhm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330mW 5V 330W Tc 290 ns 46A SWITCHING 30 ns SILICON N-Channel 46m Ω @ 26A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 31ns 21 ns 30V 250V 250V 5 V 46A Tc 10V ±30V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.699mm 9.65mm 3.3MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 1.3V DRAIN Single 130W 20 ns 4V 300W Tc 75A SWITCHING 87 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 20ns 87 ns 20V 55V 4 V 75A Tc 890A 940 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 95A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 20.7mm 5.3086mm 5.3Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 310W 12 ns 4V 310W Tc 95A SWITCHING 140 ns SILICON N-Channel 5.3m Ω @ 95A, 10V 4V @ 250μA 5600pF @ 25V 180nC @ 10V 160ns 150 ns 20V 55V 55V 4 V 95A Tc 640A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 3.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 340W 15 ns 4V 340W Tc 63 ns 120A SWITCHING 40 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 9400pF @ 50V 220nC @ 10V 76ns 77 ns 20V 75V 75V 4 V 200A 120A Tc 850A 200 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free Tin No 3 FAST SWITCHING TO-247-3 No SVHC 20.7mm 5.3086mm 25MOhm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 330W 33 ns 5V 330W Tc 150 ns 65A SWITCHING 21 ns SILICON N-Channel 25m Ω @ 46A, 10V 5V @ 250μA 4600pF @ 25V 98nC @ 10V 20ns 31 ns 30V 200V 240V 5 V 65A Tc 260A 10V ±30V
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    		 download 12 Weeks Through Hole Tube 2012 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.83mm 69MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 341W 18 ns 5V 341W Tc 38A 34 ns N-Channel 69m Ω @ 24A, 10V 5V @ 250μA 5168pF @ 50V 125nC @ 10V 23ns 20 ns 20V 300V 38A Tc 10V ±20V
    IPP120N08S403AKSA1 IPP120N08S403AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant 20.7mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 278W 30 ns 80V 278W Tc 120A 175°C 0.0028Ohm 60 ns SILICON N-Channel 2.8m Ω @ 100A, 10V 4V @ 223μA 11550pF @ 25V 167nC @ 10V 15ns 50 ns 20V 80V 120A Tc 480A 920 mJ 10V ±20V
    IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2013 CoolMOS™ yes Active Not Applicable 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 13W Tc 1.5A SWITCHING 4.5Ohm 800V SILICON N-Channel 1.4 Ω @ 1.4A, 10V 3.5V @ 200μA 250pF @ 500V 4nC @ 10V Super Junction 1.5A Tc 800V 2.6A 1 mJ 10V ±20V
    SPD15P10PGBTMA1 SPD15P10PGBTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2007 Automotive, AEC-Q101, SIPMOS® no Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Contains Lead, Lead Free 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant 2.41mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 TO-252AA DRAIN Not Halogen Free Single 128W 9.5 ns -100V 128W Tc 15A 0.24Ohm 33 ns SILICON P-Channel 240m Ω @ 10.6A, 10V 2.1V @ 1.54mA 1280pF @ 25V 48nC @ 10V 23ns 16 ns 20V -100V -3 V 15A Tc 100V 60A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.6mm ROHS3 Compliant Contains Lead, Lead Free 9.4A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 9.75mm 2.3mm 210mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power Not Qualified 1 DRAIN Single 48W 4.5 ns 4V 48W Tc 150 ns 9.4A 175°C SWITCHING 32 ns SILICON N-Channel 210m Ω @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 20V 100V 100V 4 V 7.7A 9.4A Tc 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 188W 35 ns 3V 188W Tc 120A SWITCHING 60V 62 ns SILICON N-Channel 2.9m Ω @ 100A, 10V 4V @ 118μA 13000pF @ 30V 165nC @ 10V 120ns 20 ns 20V 120A Tc 60V 480A 10V ±20V
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    		 download 18 Weeks Tube OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 125W Tc N-Channel 90m Ω @ 11.4A, 10V 4.5V @ 570μA 2103pF @ 400V 51nC @ 10V 25A Tc 600V 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 94W 9.2 ns 30V 94W Tc 80A SWITCHING 0.0047Ohm 35 ns SILICON N-Channel 3.4m Ω @ 30A, 10V 2.2V @ 250μA 5300pF @ 15V 51nC @ 10V 6.4ns 5.4 ns 20V 80A Tc 400A 70 mJ 4.5V 10V ±20V
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    		 download 26 Weeks Tape & Reel (TR) OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 3W Ta 43W Tc SWITCHING 0.0097Ohm 60V SILICON N-Channel 9.7m Ω @ 40A, 10V 3.3V @ 14μA 1075pF @ 30V 15nC @ 10V 12A 13A Ta 48A Tc 60V 184A 13 mJ 6V 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 69W 25V 2.5W Ta 69W Tc 29A SWITCHING 0.0023Ohm SILICON N-Channel 1.8m Ω @ 30A, 10V 2V @ 250μA 2800pF @ 12V 39nC @ 10V 4.4ns 20V 29A Ta 100A Tc 400A 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 2 EAR99 4.826mm ROHS3 Compliant Lead Free No 6 DirectFET™ Isometric SQ 506μm 3.95mm 4.9MOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 36W 11 ns 2.2W Ta 36W Tc 17A SWITCHING 14 ns SILICON N-Channel 4.9m Ω @ 17A, 10V 2.4V @ 50μA 1570pF @ 13V 18nC @ 4.5V 40ns 12 ns 20V 25V 17A Ta 68A Tc 4.5V 10V ±20V
    IPSA70R950CEAKMA1 IPSA70R950CEAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Stub Leads, IPak not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 94W Tc SWITCHING 0.95Ohm 700V SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 150μA 328pF @ 100V 15.3nC @ 10V 8.7A Tc 700V 12A 50 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.017mm 4.82mm 9MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 16 ns 4V 140W Tc 50 ns 80A SWITCHING 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A Tc 10V ±20V