All Products
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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Breakdown Voltage-Min | Polarity/Channel Type | Max Surge Current | Element Configuration | Power Dissipation | Turn On Delay Time | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage | Recovery Time | Reverse Test Voltage | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXBX25N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2010 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 300W | 300W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 1.6 μs | 55A | 2.5kV | 3.3V | POWER CONTROL | SILICON | 694 ns | 3.3V @ 15V, 25A | 650 ns | 20V | 2500V | 5V | 103nC | 180A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBK75N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2003 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXB*75N170 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 1.04kW | 1040W | 1 | COLLECTOR | N-CHANNEL | Single | 1.5 μs | 200A | 1.7kV | 3.1V | POWER CONTROL | SILICON | 277 ns | 3.1V @ 15V, 75A | 840 ns | 20V | 1700V | 5.5V | 350nC | 580A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH2N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 32W | 32W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 5.5A | 2.5kV | 3.1V | POWER CONTROL | SILICON | 115 ns | 3.1V @ 15V, 2A | 278 ns | 20V | 2500V | 5.5V | 10.5nC | 13.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXH50N60C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~175°C TJ | Standard | IXX*N60 | 3 | Insulated Gate BIP Transistors | 600W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 600W | 24 ns | 25 ns | 100A | 600V | 600V | POWER CONTROL | 62 ns | SILICON | 2.3V | 69 ns | 2.3V @ 15V, 36A | 170 ns | PT | 20V | 5.5V | 360V, 36A, 5 Ω, 15V | 64nC | 200A | 24ns/62ns | 720μJ (on), 330μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH24N170C | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Tube | 2016 | XPT™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 500W | 30ns | 3.8V @ 15V, 20A | 1700V | 58A | 960V, 30A, 15 Ω, 15V | 96nC | 145A | 12ns/160ns | 4.9mJ (on), 1.95mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT42N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2008 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXB*42N170 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 360W | 360W | 1 | COLLECTOR | N-CHANNEL | Single | 45 ns | 1.32 μs | 80A | 1.7kV | 1.7kV | POWER CONTROL | 560 ns | SILICON | 2.3V | 224 ns | 2.8V @ 15V, 42A | 1070 ns | 20V | 1700V | 5.5V | 188nC | 300A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGF25N250 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | UL RECOGNIZED | i4-Pac™-5 (3 Leads) | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*25N250 | 3 | Insulated Gate BIP Transistors | Not Qualified | 114W | 114W | 1 | ISOLATED | N-CHANNEL | Single | 30A | 2.5kV | 2.5kV | POWER CONTROL | SILICON | 301 ns | 5.2V @ 15V, 75A | 409 ns | NPT | 20V | 2500V | 5V | 75nC | 200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMIX1X200N60B3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 25.25mm | ROHS3 Compliant | 24 | 24-PowerSMD, 21 Leads | 5.7mm | 23.25mm | Surface Mount | -55°C~150°C TJ | Standard | IXG*200N60 | 520W | 520W | Single | 100 ns | 175A | 600V | 1.7V | 1.7V @ 15V, 100A | 360V, 100A, 1 Ω, 15V | 315nC | 1000A | 48ns/160ns | 2.85mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBT20N300HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2013 | BIMOSFET™ | Not For New Designs | 1 (Unlimited) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | Insulated Gate BIP Transistors | 250W | 250W | N-CHANNEL | 1.35 μs | 50A | 3kV | 3.2V | 3.2V @ 15V, 20A | 20V | 3000V | 5V | 105nC | 140A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT6N170 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2006 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*6N170 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 75W | 75W | 1 | COLLECTOR | N-CHANNEL | Single | 12A | 1.7kV | 1.7kV | MOTOR CONTROL | SILICON | 4V | 85 ns | 4V @ 15V, 6A | 600 ns | NPT | 20V | 1700V | 5V | 1360V, 6A, 33 Ω, 15V | 20nC | 24A | 40ns/250ns | 1.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBA14N300HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2016 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | 200W | 200W | 1.4 μs | 38A | 3kV | 2.7V | 2.7V @ 15V, 14A | NPT | 3000V | 960V, 14A, 20 Ω, 15V | 62nC | 120A | 40ns/166ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGK72N60C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | IXG*72N60 | TO-264 (IXGK) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX82N120A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 1.25kW | 1250W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 260A | 1.2kV | 2.05V | POWER CONTROL | SILICON | 109 ns | 2.05V @ 15V, 82A | 1590 ns | PT | 20V | 1200V | 5V | 600V, 80A, 2 Ω, 15V | 340nC | 580A | 34ns/265ns | 5.5mJ (on), 12.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA70C200HB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, FREEWHEELING DIODE, LOW NOISE | TO-247-3 | Through Hole | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 150°C | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | SOFT RECOVERY | 1 | TO-247AD | 70A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 640μA @ 200V | 930mV @ 35A | -55°C~175°C | 200V | 35A | 1 Pair Common Cathode | 0.25 °C/W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG120C300QB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2006 | HiPerFRED²™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | TO-3P-3, SC-65-3 | No SVHC | unknown | Through Hole | 8541.10.00.80 | e3 | PURE TIN | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Standard | FAST SOFT RECOVERY | 1 | 60A | 1.4V | 450A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 300V | 1.4V @ 60A | -55°C~175°C | 300V | 60A | 1μA | 300V | 1 Pair Common Cathode | 550A | 35 ns | 300V | 35 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEC120-12AK | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Radial, Through Hole | Tube | 2004 | HiPerFRED™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | FREE WHEELING DIODE, SNUBBER DIODE | TO-264-3, TO-264AA | unknown | Through Hole | 10.000011g | AVALANCHE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 230W | SILICON | 2 | Standard | SOFT RECOVERY | 1 | 2.66V | 500A | Common Cathode | 2.5mA | Fast Recovery =< 500ns, > 200mA (Io) | 650μA @ 1200V | 2.66V @ 60A | -55°C~175°C | 1.2kV | 60A | 500A | 1 Pair Common Cathode | 1200V | 40 ns | 40 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP2X101-04A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Panel, Screw | Tube | 2011 | yes | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | 38.23mm | ROHS3 Compliant | Lead Free | 4 | SNUBBER DIODE, FREE WHEELING DIODE | SOT-227-4, miniBLOC | 12.22mm | 25.42mm | Chassis Mount | AVALANCHE | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DSEP2X | 4 | Other Diodes | Not Qualified | SILICON | 2 | Standard | SOFT RECOVERY | 1 | 100A | 1.95V | ISOLATED | 1kA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 400V | 1.54V @ 100A | 400V | 100A | 1mA | 400V | 1kA | 2 Independent | 1kA | 30 ns | 200W | 400V | 30 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSSK40-008B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Radial, Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-3P-3 Full Pack | No SVHC | Through Hole | 6.500007g | 8541.10.00.80 | SINGLE | 3 | Rectifier Diodes | 115W | SILICON | 2 | Schottky | POWER | 1 | TO-247AD | 20A | 520mV | 500A | Common Cathode | 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 20mA @ 80V | 580mV @ 20A | -55°C~150°C | 80V | 20A | 20mA | 80V | 500A | 1 Pair Common Cathode | 500A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MDD312-16N1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Panel, Screw | Bulk | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | 115mm | ROHS3 Compliant | No | 3 | Y1-CU | No SVHC | 49mm | 50mm | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | MDD312 | Rectifier Diodes | SILICON | 2 | Standard | GENERAL PURPOSE | 1 | 310A | 1.32V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | 30mA @ 1600V | 1.32V @ 600A | 1.6kV | 310A | 30mA | 1.6kV | 11.2kA | 1 Pair Series Connection | 10.8kA | 1600V | 1.6kV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS2X160-01A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Screw | Tube | 2000 | yes | Active | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | No | 4 | FREE WHEELING DIODE | SOT-227-4, miniBLOC | No SVHC | Chassis Mount | 38.000013g | 100V | Nickel (Ni) | UPPER | DSS2X | 4 | R-XUFM-N2 | Other Diodes | 410W | SILICON | 2 | Schottky | GENERAL PURPOSE | 1 | 80A | 810mV | 1.4kA | Common Cathode | 4mA | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 100V | 980mV @ 160A | 100V | 160A | 4mA | 100V | 1.4kA | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP2X60-12A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Chassis Mount, Panel, Screw | Tube | 2002 | HiPerFRED™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | 38.23mm | ROHS3 Compliant | Lead Free | 4 | FREE WHEELING DIODE, SNUBBER DIODE | SOT-227-4, miniBLOC | 12.22mm | 25.42mm | Chassis Mount | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DSEP2X | 4 | Other Diodes | Not Qualified | SILICON | 2 | Standard | SOFT RECOVERY | 1 | 60A | 2.84V | ISOLATED | 800A | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 1200V | 2.42V @ 60A | 1.2kV | 60A | 1mA | 1.2kV | 800A | 2 Independent | 800A | 1200V | 40 ns | 200W | 1.2kV | 40 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DH40-18A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2006 | SONIC-FRD™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | No | 2 | LOW LEAKAGE CURRENT, PD-CASE | TO-247-2 | Through Hole | 6.500007g | AVALANCHE | 8541.10.00.80 | 3 | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | 40A | 2.7V | CATHODE | 1800V | 350A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1800V | 2.7V @ 40A | -40°C~150°C | 1.8kV | 40A | 100μA | 1.8kV | 350A | 1800V | 100 ns | 100 ns | 1800V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSS60-0045B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 16.26mm | ROHS3 Compliant | Lead Free | No | 2 | TO-247-2 | No SVHC | 21.46mm | 5.3mm | Through Hole | 8541.10.00.80 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | POWER | 1 | 60A | 600mV | CATHODE | 600A | Single | 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 10mA @ 45V | 600mV @ 60A | -55°C~150°C | 45V | 60A | 10mA | 45V | 600A | 600A | 155W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP30-12A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2000 | HiPerFRED™ | yes | Active | Not Applicable | 2 | EAR99 | 175°C | -55°C | 16.26mm | ROHS3 Compliant | Lead Free | 30A | No | 2 | FREE WHEELING DIODE, SNUBBER DIODE, UL REGISTERED | TO-247-2 | 21.46mm | 5.3mm | Through Hole | 1.2kV | SCHOTTKY | 8541.10.00.80 | 3 | Rectifier Diodes | SILICON | 1 | Standard | SOFT RECOVERY | 1 | 30A | 30A | 2.74V | CATHODE | 200A | Single | 165W | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 1200V | 2.74V @ 30A | -55°C~175°C | 1.2kV | 30A | 250μA | 1.2kV | 200A | 200A | 1200V | 40 ns | 1.2kV | 40 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DH60-18A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2004 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | No | 3 | FREE WHEELING DIODE, SNUBBER DIODE | TO-247-2 | No SVHC | Through Hole | 8541.10.00.80 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | 64A | FAST SOFT RECOVERY | 1 | TO-247AD | 60A | 2.7V | CATHODE | 650A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 1800V | 2.04V @ 60A | -55°C~150°C | 1.8kV | 60A | 200μA | 1.8kV | 700A | 650A | 1800V | 230 ns | 1.8kV | 150 ns | 32pF @ 1200V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA1-12D | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Bulk | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 1 | Radial | Through Hole | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Avalanche | GENERAL PURPOSE | 1 | 1.34V | 110A | Single | 700μA | Standard Recovery >500ns, > 200mA (Io) | 700μA @ 1200V | 1.34V @ 7A | -40°C~150°C | 1.2kV | 2.3A | 118A | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSAI75-16B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Chassis, Stud | Bulk | 2000 | yes | Obsolete | 1 (Unlimited) | 1 | EAR99 | 180°C | -40°C | ROHS3 Compliant | Lead Free | 2 | DO-203AB, DO-5, Stud | No SVHC | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1 | O-MUPM-D1 | Rectifier Diodes | Not Qualified | SILICON | 1 | Avalanche | GENERAL PURPOSE | 1 | 1400A | 1.17V | CATHODE | 1.4kA | Single | Standard Recovery >500ns, > 200mA (Io) | 6mA @ 1600V | 1.17V @ 150A | -40°C~180°C | 1.6kV | 110A | 6mA | 1.5kA | 1600V | 1.6kV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA300I100NA | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Chassis Mount, Screw | Tube | 2000 | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | UPPER | UNSPECIFIED | 4 | Rectifier Diodes | SILICON | 1 | Schottky | SOFT RECOVERY | 1 | 1.19V | ISOLATED | Common Cathode | 830W | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 100V | 990mV @ 300A | -40°C~150°C | 100V | 300A | 3mA | 100V | 4.8kA | 0.1 °C/W | 4.86nF @ 12V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA300I200NA | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Tube | 2012 | Active | 1 (Unlimited) | 4 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Lead Free | 4 | FREE WHEELING DIODE, HIGH RELIABILITY LOW NOISE, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | 750W | SILICON | 1 | Schottky | SOFT RECOVERY | 1 | 3500A | ISOLATED | 3.5kA | Common Cathode | 4mA | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 200V | 1.03V @ 300A | 200V | 300A | 3.5kA | 2220pF @ 24V 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30E2200PA | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 9.91mm | ROHS3 Compliant | LOW LEAKAGE CURRENT | TO-220-2 | 14.73mm | 4.32mm | Through Hole | 2.299997g | 8541.10.00.80 | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | HIGH VOLTAGE | 1 | TO-220AC | 340A | ANODE | 400A | Single | 40μA | Standard Recovery >500ns, > 200mA (Io) | 40μA @ 2200V | 1.26V @ 30A | -55°C~175°C | 2.2kV | 30A | 400A | 2200V | 0.5 °C/W | 7pF @ 700V 1MHz |