Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Input Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Diode Element Material | Number of Elements | Configuration | Diode Type | Application | Number of Phases | JEDEC-95 Code | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Power Dissipation | Turn On Delay Time | Max Reverse Leakage Current | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Rise Time | Input Capacitance | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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IXSP20N60B2D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2009 | yes | Obsolete | 1 (Unlimited) | 2 | 10.66mm | RoHS Compliant | Lead Free | 35A | 3 | LOW CONDUCTION LOSS | TO-220-3 | 9.15mm | 4.82mm | Through Hole | 2.299997g | -55°C~150°C TJ | 600V | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXS*20N60 | 4 | R-PSSO-G2 | Not Qualified | 190W | 1 | COLLECTOR | N-CHANNEL | Single | 190W | 30 ns | 35A | 600V | 600V | POWER CONTROL | SILICON | 30ns | 2.5V | 60 ns | 2.5V @ 15V, 16A | 390 ns | PT | 480V, 16A, 10 Ω, 15V | 33nC | 60A | 30ns/116ns | 380μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP2N100 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 25W | 25W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 4A | 1kV | 1kV | POWER CONTROL | SILICON | 100 ns | 2.7V @ 15V, 2A | 100 ns | 20V | 1000V | 8V | 800V, 2A, 150 Ω, 15V | 7.8nC | 8A | 15ns/300ns | 560μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYP15N65C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2014 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | Standard | 200W | 200W | 38A | 650V | 2.5V | 2.5V @ 15V, 15A | PT | 400V, 15A, 20 Ω, 15V | 19nC | 80A | 15ns/68ns | 270μJ (on), 230μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGA42N30C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 223W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 42A | 300V | 1.85V | POWER CONTROL | SILICON | 43 ns | 1.85V @ 15V, 42A | 229 ns | PT | 20V | 5V | 120ns | 200V, 21A, 10 Ω, 15V | 76nC | 250A | 21ns/113ns | 120μJ (on), 150μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGA48N60A3-TRL | IXYS | $0.00 |
Min: 1 Mult: 1 |
30 Weeks | GenX3™ | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | Standard | 300W | 30ns | 1.35V @ 15V, 32A | PT | 600V | 120A | 480V, 32A, 5 Ω, 15V | 110nC | 300A | 25ns/334ns | 950μJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYP10N65B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
24 Weeks | XPT™, GenX3™ | Active | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | Standard | 160W | 29ns | 1.95V @ 15V, 10A | PT | 650V | 32A | 400V, 10A, 50 Ω, 15V | 20nC | 62A | 17ns/125ns | 300μJ (on), 200μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP70N33TBM-A | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | 2001 | Active | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 | Through Hole | 2.299997g | Standard | 330V | 330V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP2N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | 8541.29.00.95 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 25W | 25W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 4A | 1kV | 1kV | POWER CONTROL | SILICON | 100 ns | 3.5V @ 15V, 2A | 100 ns | 20V | 1000V | 8V | 800V, 2A, 150 Ω, 15V | 7.8nC | 8A | 15ns/300ns | 260μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYA20N65C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | 2015 | XPT™, GenX3™ | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | Surface Mount | -55°C~175°C TJ | Standard | 200W | 34ns | 2.5V @ 15V, 20A | 650V | 50A | 400V, 20A, 20 Ω, 15V | 30nC | 105A | 19ns/80ns | 430μJ (on), 650μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP12N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2000 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | HIGH SPEED | TO-220-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*12N100 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 100W | 100W | 1 | SINGLE | TO-220AB | COLLECTOR | N-CHANNEL | 24A | 1kV | 4V | POWER CONTROL | SILICON | 100 ns | 4V @ 15V, 12A | 900 ns | 20V | 1000V | 5V | 700ns | 800V, 12A, 120 Ω, 15V | 65nC | 48A | 100ns/850ns | 2.5mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGP30N60C3D4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2011 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*30N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 220W | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | COLLECTOR | N-CHANNEL | 220W | 60 ns | 60A | 600V | 3V | POWER CONTROL | SILICON | 2.6V | 45 ns | 3V @ 15V, 20A | 160 ns | PT | 20V | 5.5V | 300V, 20A, 5 Ω, 15V | 38nC | 150A | 16ns/42ns | 270μJ (on), 90μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGH20N120IH | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | Standard | IXG*20N120 | 1.2kV | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYB82N120C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | EAR99 | 20.29mm | ROHS3 Compliant | Lead Free | 264 | AVALANCHE RATED | TO-264-3, TO-264AA | 26.59mm | 5.31mm | Through Hole | -55°C~150°C TJ | Standard | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | 1.04kW | 1040W | 1 | COLLECTOR | N-CHANNEL | Single | 1.04kW | 29 ns | 420 ns | 164A | 1.2kV | 1.2kV | POWER CONTROL | 192 ns | SILICON | 2.75V | 119 ns | 3.2V @ 15V, 82A | 295 ns | 20V | 1200V | 5V | 600V, 80A, 2 Ω, 15V | 215nC | 320A | 29ns/192ns | 4.95mJ (on), 2.78mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBA16N170AHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | BIMOSFET™ | Active | 1 (Unlimited) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 150W | 25ns | 6V @ 15V, 10A | 1700V | 16A | 1360V, 10A, 10 Ω, 15V | 65nC | 40A | 15ns/250ns | 2.5mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYX100N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2011 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 16.13mm | ROHS3 Compliant | Lead Free | 247 | AVALANCHE RATED | TO-247-3 | unknown | 21.34mm | 5.21mm | Through Hole | -55°C~175°C TJ | Standard | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | 1.15kW | 1150W | 1 | COLLECTOR | N-CHANNEL | Single | 1.15kW | 32 ns | 188A | 1.2kV | 1.2kV | POWER CONTROL | 123 ns | SILICON | 2.9V | 122 ns | 3.5V @ 15V, 100A | 265 ns | 20V | 1200V | 5V | 600V, 100A, 1 Ω, 15V | 270nC | 490A | 32ns/123ns | 6.5mJ (on), 2.9mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGH48N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*48N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | 300W | 1 | COLLECTOR | N-CHANNEL | Single | 300W | 75A | 600V | 600V | POWER CONTROL | SILICON | 1.96nF | 2.3V | 45 ns | 2.5V @ 15V, 30A | 187 ns | PT | 20V | 5.5V | 400V, 30A, 3 Ω, 15V | 77nC | 250A | 19ns/60ns | 410μJ (on), 230μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYL60N450 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2016 | XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | ISOPLUSi5-Pak™ | Through Hole | -55°C~150°C TJ | Standard | 417W | 417W | 90A | 4.5kV | 3.3V | 3.3V @ 15V, 60A | 4500V | 960V, 60A, 4.7 Ω, 15V | 366nC | 680A | 55ns/450ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBF50N360 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2014 | BIMOSFET™ | Not For New Designs | 1 (Unlimited) | ROHS3 Compliant | i4-Pac™-5 (3 Leads) | unknown | Through Hole | -55°C~150°C TJ | Standard | 290W | 290W | 1.7 μs | 70A | 3.6kV | 2.9V | 2.9V @ 15V, 50A | 3600V | 960V, 50A, 5 Ω, 15V | 210nC | 420A | 46ns/205ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXEL40N400 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 61 Weeks | Through Hole | Tube | 2012 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | UL RECOGNIZED | ISOPLUSi5-Pak™ | Through Hole | -40°C~150°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 380W | 1 | ISOLATED | N-CHANNEL | Single | 40A | 4kV | 4kV | GENERAL PURPOSE SWITCHING | SILICON | 3V | 260 ns | 3.2V @ 15V, 40A | 1170 ns | 20V | 4000V | 90A | 7V | 2800V, 40A, 33 Ω, 15V | 275nC | 400A | 160ns/630ns | 55mJ (on), 165mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXXK160N65B4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | Through Hole | Tube | 2013 | GenX4™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-264-3, TO-264AA | Through Hole | -55°C~175°C TJ | Standard | 160N65 | Insulated Gate BIP Transistors | 940W | N-CHANNEL | Single | 940W | 310A | 650V | 1.8V | 1.54V | 1.8V @ 15V, 160A | PT | 20V | 6.5V | 400V, 80A, 1 Ω, 15V | 425nC | 860A | 52ns/220ns | 3.3mJ (on), 1.88mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYH40N120C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | 16.26mm | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-247-3 | 21.46mm | 5.3mm | Through Hole | -55°C~175°C TJ | Standard | 3 | Insulated Gate BIP Transistors | 577W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 577W | 24 ns | 70A | 1.2kV | 1.2kV | POWER CONTROL | 125 ns | SILICON | 3.6V | 99 ns | 4V @ 15V, 40A | 178 ns | 20V | 1200V | 5V | 600V, 40A, 10 Ω, 15V | 85nC | 115A | 24ns/125ns | 3.9mJ (on), 660μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYX140N90C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | SINGLE | R-PSFM-T3 | Insulated Gate BIP Transistors | 1.63kW | 1630W | 1 | SINGLE | COLLECTOR | N-CHANNEL | 310A | 900V | 2.7V | POWER CONTROL | SILICON | 122 ns | 2.7V @ 15V, 140A | 300 ns | 20V | 5.5V | 450V, 100A, 1 Ω, 15V | 330nC | 840A | 40ns/145ns | 4.3mJ (on), 4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGT16N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2014 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*16N170 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 190W | 1 | COLLECTOR | N-CHANNEL | Single | 190W | 230 ns | 16A | 1.7kV | 1.7kV | MOTOR CONTROL | SILICON | 4.2V | 97 ns | 5V @ 15V, 11A | 330 ns | NPT | 20V | 1700V | 5V | 150ns | 850V, 16A, 10 Ω, 15V | 65nC | 40A | 36ns/160ns | 900μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXGX120N120A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | Insulated Gate BIP Transistors | Not Qualified | 830W | 1 | COLLECTOR | N-CHANNEL | Single | 830W | 40 ns | 240A | 1.2kV | 2.2V | POWER CONTROL | 490 ns | SILICON | 1.85V | 105 ns | 2.2V @ 15V, 100A | 1365 ns | PT | 20V | 1200V | 5V | 960V, 100A, 1 Ω, 15V | 420nC | 600A | 40ns/490ns | 10mJ (on), 33mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBT42N300HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tube | 2014 | BIMOSFET™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 500W | 500W | N-CHANNEL | 1.7 μs | 104A | 3kV | 3V | 3V @ 15V, 42A | 25V | 3000V | 5V | 1500V, 42A, 20 Ω, 15V | 200nC | 400A | 72ns/445ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBH42N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2010 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXB*42N170 | 3 | Insulated Gate BIP Transistors | Not Qualified | 357W | 357W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 330 ns | 42A | 1.7kV | 1.7kV | MOTOR CONTROL | SILICON | 5.2V | 63 ns | 6V @ 15V, 21A | 420 ns | 20V | 1700V | 5.5V | 850V, 21A, 1 Ω, 15V | 188nC | 265A | 19ns/200ns | 3.43mJ (on), 430μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXYH40N90C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2013 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | Insulated Gate BIP Transistors | 500W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 500W | 100ns | 90A | 900V | 900V | POWER CONTROL | SILICON | 2.2V | 81 ns | 2.5V @ 15V, 40A | 237 ns | 20V | 5.5V | 450V, 40A, 5 Ω, 15V | 74nC | 180A | 27ns/78ns | 1.9mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DSA70C200HB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2010 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, FREEWHEELING DIODE, LOW NOISE | TO-247-3 | Through Hole | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 150°C | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | SOFT RECOVERY | 1 | TO-247AD | 70A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 640μA @ 200V | 930mV @ 35A | -55°C~175°C | 200V | 35A | 1 Pair Common Cathode | 0.25 °C/W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DPG120C300QB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2006 | HiPerFRED²™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | TO-3P-3, SC-65-3 | No SVHC | unknown | Through Hole | 8541.10.00.80 | e3 | PURE TIN | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Rectifier Diodes | Not Qualified | SILICON | 2 | Standard | FAST SOFT RECOVERY | 1 | 60A | 1.4V | 450A | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 300V | 1.4V @ 60A | -55°C~175°C | 300V | 60A | 1μA | 300V | 1 Pair Common Cathode | 550A | 35 ns | 300V | 35 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
DSEC120-12AK | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Radial, Through Hole | Tube | 2004 | HiPerFRED™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | FREE WHEELING DIODE, SNUBBER DIODE | TO-264-3, TO-264AA | unknown | Through Hole | 10.000011g | AVALANCHE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 230W | SILICON | 2 | Standard | SOFT RECOVERY | 1 | 2.66V | 500A | Common Cathode | 2.5mA | Fast Recovery =< 500ns, > 200mA (Io) | 650μA @ 1200V | 2.66V @ 60A | -55°C~175°C | 1.2kV | 60A | 500A | 1 Pair Common Cathode | 1200V | 40 ns | 40 ns |
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