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Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code RoHS Status Lead Free Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Number of Drivers Resistance Mounting Type Operating Temperature Technology Operating Mode HTS Code Nominal Supply Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Output Voltage Number of Elements Configuration JEDEC-95 Code Output Current Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Voltage - Off State Current - On State (It (RMS)) (Max) Current - Hold (Ih) (Max) Voltage - Gate Trigger (Vgt) (Max) Current - Non Rep. Surge 50, 60Hz (Itsm) Current - Gate Trigger (Igt) (Max) SCR Type Voltage - On State (Vtm) (Max) Current - Off State (Max) Current - On State (It (AV)) (Max)
IXFH42N50P2 IXFH42N50P2 IXYS $0.00
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download 30 Weeks Through Hole Tube 2011 HiPerFET™, PolarHV™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 830W 830W Tc 42A SWITCHING 0.145Ohm SILICON N-Channel 145m Ω @ 500mA, 10V 4.5V @ 4mA 5300pF @ 25V 92nC @ 10V 30V 500V 42A Tc 126A 1400 mJ 10V ±30V
IXFK44N80P IXFK44N80P IXYS $0.00
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download 30 Weeks Through Hole Tube 2006 HiPerFET™, PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA No SVHC 190MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 1 DRAIN Single 1.04kW 5V 1040W Tc 44A SWITCHING 75 ns SILICON N-Channel 190m Ω @ 22A, 10V 5V @ 8mA 12000pF @ 25V 198nC @ 10V 22ns 27 ns 30V 800V 44A Tc 10V ±30V
IXFK120N65X2 IXFK120N65X2 IXYS $0.00
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IXFT24N90P IXFT24N90P IXYS $0.00
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IXFK520N075T2 IXFK520N075T2 IXYS $0.00
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IXFN420N10T IXFN420N10T IXYS $0.00
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IXFX360N15T2 IXFX360N15T2 IXYS $0.00
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IXFA6N120P IXFA6N120P IXYS $0.00
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download 30 Weeks Surface Mount Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.90.00.00 e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc 6A SWITCHING 0.0024Ohm 1200V SILICON N-Channel 2.4 Ω @ 500mA, 10V 5V @ 1mA 2830pF @ 25V 92nC @ 10V 6A 6A Tc 1200V 18A 10V ±30V
IXTP4N80P IXTP4N80P IXYS $0.00
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IXFX120N25P IXFX120N25P IXYS $0.00
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IXFH20N100P IXFH20N100P IXYS $0.00
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download 30 Weeks Through Hole Tube 2008 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 R-PSFM-T3 FET General Purpose Power 1 TO-247AD DRAIN Single 660W 660W Tc 20A SWITCHING 0.57Ohm 56 ns SILICON N-Channel 570m Ω @ 10A, 10V 6.5V @ 1mA 7300pF @ 25V 126nC @ 10V 37ns 45 ns 30V 1kV 20A Tc 1000V 50A 800 mJ 10V ±30V
IXFH46N65X2 IXFH46N65X2 IXYS $0.00
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download 19 Weeks Through Hole Tube 2013 HiPerFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-247-3 unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 660W Tc 46A N-Channel 76m Ω @ 23A, 10V 5.5V @ 4mA 4810pF @ 25V 75nC @ 10V 46A Tc 650V 10V ±30V
IXKH70N60C5 IXKH70N60C5 IXYS $0.00
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download 20 Weeks Through Hole Tube 2009 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-247-3 45MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 TO-247AD DRAIN Single 625W 70A SWITCHING 100 ns SILICON N-Channel 45m Ω @ 44A, 10V 3.5V @ 3mA 6800pF @ 100V 190nC @ 10V 20ns 10 ns 20V 600V Super Junction 70A Tc 10V ±20V
IXFH9N80 IXFH9N80 IXYS $0.00
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IXFH230N075T2 IXFH230N075T2 IXYS $0.00
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download 30 Weeks Through Hole Tube 2010 TrenchT2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-247-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 480W Tc 230A SWITCHING 0.0042Ohm 75V SILICON N-Channel 4.2m Ω @ 50A, 10V 4V @ 250μA 10500pF @ 25V 178nC @ 10V 230A Tc 75V 700A 850 mJ 10V ±20V
IXFH230N10T IXFH230N10T IXYS $0.00
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download Through Hole Tube 2009 HiPerFET™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE 3 R-PSFM-T3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 650W 650W Tc 230A SWITCHING 0.0047Ohm SILICON N-Channel 4.7m Ω @ 500mA, 10V 4.5V @ 1mA 15300pF @ 25V 250nC @ 10V 230A Tc 100V 500A 10V ±20V
IXTK170N10P IXTK170N10P IXYS $0.00
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download 28 Weeks Through Hole Tube 2010 Polar™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-264-3, TO-264AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 714W 715W Tc 170A SWITCHING 0.009Ohm 90 ns SILICON N-Channel 9m Ω @ 500mA, 10V 5V @ 250μA 6000pF @ 25V 198nC @ 10V 50ns 33 ns 20V 100V 170A Tc 350A 2000 mJ 10V ±20V
IXFH12N90P IXFH12N90P IXYS $0.00
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download 30 Weeks Through Hole Tube 2001 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-247-3 No SVHC Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 380W 3.5V 380W Tc 12A SWITCHING 0.9Ohm 50 ns SILICON N-Channel 900m Ω @ 6A, 10V 6.5V @ 1mA 3080pF @ 25V 56nC @ 10V 34ns 68 ns 30V 900V 3.5 V 12A Tc 24A 500 mJ 10V ±30V
IXFK120N30T IXFK120N30T IXYS $0.00
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download 30 Weeks Through Hole Tube 2009 GigaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 960W Tc 120A SWITCHING 0.024Ohm 300V SILICON N-Channel 24m Ω @ 60A, 10V 5V @ 4mA 20000pF @ 25V 265nC @ 10V 120A Tc 300V 330A 2500 mJ 10V ±20V
IXFK180N15P IXFK180N15P IXYS $0.00
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download 20 Weeks Through Hole Bulk 2006 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA No SVHC 11MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 1 DRAIN Single 830W 5V 830W Tc 180A SWITCHING 150 ns SILICON N-Channel 11m Ω @ 90A, 10V 5V @ 4mA 7000pF @ 25V 240nC @ 10V 32ns 36 ns 20V 150V 180A Tc 4000 mJ 10V ±20V
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download 30 Weeks Through Hole Tube 2008 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-264-3, TO-264AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.25kW 1250W Tc 170A SWITCHING 200V SILICON N-Channel 14m Ω @ 500mA, 10V 5V @ 1mA 11400pF @ 25V 185nC @ 10V 20V 170A Tc 200V 400A 4000 mJ 10V ±20V
IXFK100N10 IXFK100N10 IXYS $0.00
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download Through Hole Tube 2000 HiPerFET™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA 12MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 DRAIN Single 500W 500W Tc 100A SWITCHING 100 ns SILICON N-Channel 12m Ω @ 75A, 10V 4V @ 8mA 9000pF @ 25V 360nC @ 10V 60ns 60 ns 20V 100V 100A Tc 560A 10V ±20V
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download 30 Weeks Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 960W 960W Tc 40A SWITCHING 0.21Ohm 77 ns SILICON N-Channel 230m Ω @ 20A, 10V 6.5V @ 1mA 14000pF @ 25V 230nC @ 10V 50ns 46 ns 900V 40A Tc 80A 1500 mJ 10V ±30V
IXFX50N50 IXFX50N50 IXYS $0.00
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download 6 Weeks Through Hole Tube 2002 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-247-3 100MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 DRAIN Single 520W 520W Tc 50A SWITCHING 120 ns SILICON N-Channel 100m Ω @ 25A, 10V 4.5V @ 8mA 9400pF @ 25V 330nC @ 10V 60ns 45 ns 20V 500V 50A Tc 200A 10V ±20V
IXFK24N100F IXFK24N100F IXYS $0.00
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N1140LN140 N1140LN140 IXYS $0.00
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8 Weeks Active 1 (Unlimited) ROHS3 Compliant TO-200AB, B-PuK Chassis Mount -60°C~130°C 1.4kV 2565A 300mA 2.5V 19500A @ 50Hz 250mA Standard Recovery 1.87V 100mA 1315A