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Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Number of Drivers Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code Nominal Supply Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Output Voltage Diode Element Material Number of Elements Configuration Diode Type Application Number of Phases Rep Pk Reverse Voltage-Max JEDEC-95 Code Non-rep Pk Forward Current-Max Output Current Forward Current Forward Voltage Case Connection Polarity/Channel Type On-State Current-Max Repetitive Peak Off-state Voltage Leakage Current (Max) Non-Repetitive Pk On-state Cur Critical Rate of Rise of Off-State Voltage-Min Holding Current-Max DC Gate Trigger Current-Max DC Gate Trigger Voltage-Max Max Surge Current Element Configuration Power Dissipation Turn On Delay Time Max Reverse Leakage Current Threshold Voltage Input Max Reverse Voltage (DC) Average Rectified Current Peak Reverse Current Peak Non-Repetitive Surge Current Reverse Recovery Time Power Dissipation-Max Reverse Voltage Recovery Time Forward Voltage-Max Max Collector Current Collector Emitter Breakdown Voltage Hold Current Collector Emitter Voltage (VCEO) RMS Current (Irms) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Trigger Device Type Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Nominal Vgs Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Collector Emitter Saturation Voltage Turn On Time Turn Off Time-Nom (toff) NTC Thermistor Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Repetitive Peak Reverse Voltage RMS On-state Current-Max Circuit Commutated Turn-off Time-Nom
IXFH230N10T IXFH230N10T IXYS $0.00
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download Through Hole Tube 2009 HiPerFET™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE 3 R-PSFM-T3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-247AD DRAIN 650W 650W Tc 230A SWITCHING 0.0047Ohm SILICON N-Channel 4.7m Ω @ 500mA, 10V 4.5V @ 1mA 15300pF @ 25V 250nC @ 10V 230A Tc 100V 500A 10V ±20V
IXTK170N10P IXTK170N10P IXYS $0.00
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download 28 Weeks Through Hole Tube 2010 Polar™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-264-3, TO-264AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 714W 715W Tc 170A SWITCHING 0.009Ohm 90 ns SILICON N-Channel 9m Ω @ 500mA, 10V 5V @ 250μA 6000pF @ 25V 198nC @ 10V 50ns 33 ns 20V 100V 170A Tc 350A 2000 mJ 10V ±20V
IXFH12N90P IXFH12N90P IXYS $0.00
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download 30 Weeks Through Hole Tube 2001 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 AVALANCHE RATED TO-247-3 No SVHC Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 380W 3.5V 380W Tc 12A SWITCHING 0.9Ohm 50 ns SILICON N-Channel 900m Ω @ 6A, 10V 6.5V @ 1mA 3080pF @ 25V 56nC @ 10V 34ns 68 ns 30V 900V 3.5 V 12A Tc 24A 500 mJ 10V ±30V
IXFK120N30T IXFK120N30T IXYS $0.00
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download 30 Weeks Through Hole Tube 2009 GigaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 TIN SILVER COPPER SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 960W Tc 120A SWITCHING 0.024Ohm 300V SILICON N-Channel 24m Ω @ 60A, 10V 5V @ 4mA 20000pF @ 25V 265nC @ 10V 120A Tc 300V 330A 2500 mJ 10V ±20V
IXFK180N15P IXFK180N15P IXYS $0.00
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download 20 Weeks Through Hole Bulk 2006 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA No SVHC 11MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 1 DRAIN Single 830W 5V 830W Tc 180A SWITCHING 150 ns SILICON N-Channel 11m Ω @ 90A, 10V 5V @ 4mA 7000pF @ 25V 240nC @ 10V 32ns 36 ns 20V 150V 180A Tc 4000 mJ 10V ±20V
IXFK170N20P IXFK170N20P IXYS $0.00
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download 30 Weeks Through Hole Tube 2008 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free AVALANCHE RATED TO-264-3, TO-264AA unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.25kW 1250W Tc 170A SWITCHING 200V SILICON N-Channel 14m Ω @ 500mA, 10V 5V @ 1mA 11400pF @ 25V 185nC @ 10V 20V 170A Tc 200V 400A 4000 mJ 10V ±20V
IXFK100N10 IXFK100N10 IXYS $0.00
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download Through Hole Tube 2000 HiPerFET™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-264-3, TO-264AA 12MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 DRAIN Single 500W 500W Tc 100A SWITCHING 100 ns SILICON N-Channel 12m Ω @ 75A, 10V 4V @ 8mA 9000pF @ 25V 360nC @ 10V 60ns 60 ns 20V 100V 100A Tc 560A 10V ±20V
IXFK40N90P IXFK40N90P IXYS $0.00
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download 30 Weeks Through Hole Tube 2011 HiPerFET™, PolarP2™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED TO-264-3, TO-264AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 DRAIN Single 960W 960W Tc 40A SWITCHING 0.21Ohm 77 ns SILICON N-Channel 230m Ω @ 20A, 10V 6.5V @ 1mA 14000pF @ 25V 230nC @ 10V 50ns 46 ns 900V 40A Tc 80A 1500 mJ 10V ±30V
IXFX50N50 IXFX50N50 IXYS $0.00
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download 6 Weeks Through Hole Tube 2002 HiPerFET™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-247-3 100MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) 3 FET General Purpose Power 1 DRAIN Single 520W 520W Tc 50A SWITCHING 120 ns SILICON N-Channel 100m Ω @ 25A, 10V 4.5V @ 8mA 9400pF @ 25V 330nC @ 10V 60ns 45 ns 20V 500V 50A Tc 200A 10V ±20V
IXA20PG1200DHGLB-TRR IXA20PG1200DHGLB-TRR IXYS $0.00
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Surface Mount RoHS Compliant SMD/SMT Standard 130W 32A 1.2kV 2.1V No
IXA12IF1200TC IXA12IF1200TC IXYS $0.00
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download Surface Mount yes 2 EAR99 150°C -55°C 16.05mm RoHS Compliant 3 TO-268-3 No SVHC 5.1mm 14mm e3 PURE TIN GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Insulated Gate BIP Transistors Not Qualified 1 TO-268AA N-CHANNEL Single 85W 350 ns 85W 20A 1.2kV 2.1V POWER CONTROL 1.8V 110 ns 350 ns 20V 6.5V
IXTQ52P10P IXTQ52P10P IXYS $0.00
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download 24 Weeks Through Hole Tube 2008 PolarP™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-3P-3, SC-65-3 unknown 50MOhm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 PURE TIN NOT SPECIFIED NOT SPECIFIED 3 Other Transistors Not Qualified 1 DRAIN Single 300W 300W Tc 52A SWITCHING 38 ns SILICON P-Channel 50m Ω @ 500mA, 10V 4.5V @ 250μA 2845pF @ 25V 60nC @ 10V 29ns 22 ns 20V -100V 52A Tc 100V 10V ±20V
IXFN520N075T2 IXFN520N075T2 IXYS $0.00
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download 20 Weeks Chassis Mount, Screw Tube 2009 GigaMOS™, HiPerFET™, TrenchT2™ yes Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant Lead Free No 4 AVALANCHE RATED, UL RECOGNIZED SOT-227-4, miniBLOC Chassis Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 200A Nickel (Ni) UPPER UNSPECIFIED 4 FET General Purpose Power 75V 1 480A ISOLATED Single 940W 48 ns 940W Tc 480A SWITCHING 80 ns SILICON N-Channel 1.9m Ω @ 100A, 10V 5V @ 8mA 41000pF @ 25V 545nC @ 10V 36ns 35 ns 5V 75V 480A Tc 3000 mJ 10V ±20V
CS20-25MOT1 CS20-25MOT1 IXYS $0.00
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Surface Mount yes 2 70°C -10°C RoHS Compliant TO-268-3 8541.30.00.80 e3 PURE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE TO-268AA ANODE 2500V 250mA 300mA SCR 2500V 30A
IXA20PG1200DHGLB IXA20PG1200DHGLB IXYS $0.00
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download Surface Mount 9 150°C -55°C 25mm RoHS Compliant 9 HIGH RELIABILITY, UL RECOGNIZED SMD/SMT 5.5mm 23mm DUAL GULL WING 9 Insulated Gate BIP Transistors 2 ISOLATED N-CHANNEL Single Standard 130W 32A 1.2kV 2.1V POWER CONTROL 110 ns 350 ns No 20V
DSI30-12AS DSI30-12AS IXYS $0.00
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download Surface Mount Tape & Reel (TR) yes 2 EAR99 150°C -40°C RoHS Compliant Lead Free No 3 UL RECOGNIZED TO-263-3 AVALANCHE 8541.10.00.80 e3 Matte Tin (Sn) GULL WING 4 R-PSSO-G2 Rectifier Diodes SILICON 1 RECTIFIER DIODE GENERAL PURPOSE 1 1.45V CATHODE 300A Single 1.2kV 30A 1mA 330A 1.2kV
CLA50E1200TC CLA50E1200TC IXYS $0.00
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download Surface Mount yes 2 150°C -40°C RoHS Compliant HIGH RELIABILITY TO-268 4.500005g 8541.30.00.80 e3 PURE TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Silicon Controlled Rectifiers Not Qualified 1 SINGLE ANODE 50000A 1200V 4mA 595 A 1000V/us 100mA 50mA 1.6V 75mA 80A SCR 1200V 79A 200 μs
IXTQ52N30P IXTQ52N30P IXYS $0.00
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download 24 Weeks Through Hole Tube 2006 PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 DRAIN Single 400W 400W Tc 52A SWITCHING 0.066Ohm 60 ns SILICON N-Channel 66m Ω @ 26A, 10V 5V @ 250μA 3490pF @ 25V 110nC @ 10V 22ns 20 ns 20V 300V 52A Tc 150A 1000 mJ 10V ±20V
IXTQ36N30P IXTQ36N30P IXYS $0.00
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download 24 Weeks Through Hole Tube 2006 PolarHT™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-3P-3, SC-65-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 DRAIN Single 300W 300W Tc 36A SWITCHING 0.11Ohm 97 ns SILICON N-Channel 110m Ω @ 18A, 10V 5.5V @ 250μA 2250pF @ 25V 70nC @ 10V 30ns 28 ns 30V 300V 36A Tc 90A 1000 mJ 10V ±30V
IXFX320N17T2 IXFX320N17T2 IXYS $0.00
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download 30 Weeks Through Hole Tube 2009 GigaMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 247 AVALANCHE RATED TO-247-3 1 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 100A e1 Tin/Silver/Copper (Sn/Ag/Cu) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSIP-T3 FET General Purpose Power Not Qualified 170V 1 SINGLE WITH BUILT-IN DIODE 320A DRAIN 46 ns 1670W Tc 320A SWITCHING 0.0052Ohm 115 ns SILICON N-Channel 5.2m Ω @ 60A, 10V 5V @ 8mA 45000pF @ 25V 640nC @ 10V 170ns 230 ns 320A Tc 800A 5000 mJ 10V ±20V
DPG30C300PC DPG30C300PC IXYS $0.00
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download Surface Mount yes 3 2 EAR99 175°C -55°C RoHS Compliant Lead Free No FREEWHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT TO-263 1.59999g AVALANCHE 8541.10.00.80 Pure Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 Rectifier Diodes SILICON 2 RECTIFIER DIODE FAST SOFT RECOVERY 1 150A 1.51V 240A Common Cathode 80μA 300V 15A 240A 35 ns 90W 35 ns
CLA5E1200UC CLA5E1200UC IXYS $0.00
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download Surface Mount 2 150°C -40°C RoHS Compliant TO-252-3 8541.30.00.80 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 Silicon Controlled Rectifiers 1 SINGLE TO-252AA ANODE 5000A 1200V 54 A 20mA 1.9V 30mA 7.8A SCR 1200V 150 μs
CLA60MT1200NTZ CLA60MT1200NTZ IXYS $0.00
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download Surface Mount 150°C -40°C RoHS Compliant 60A TO-268-3 Single 60mA 66A TRIAC
IXA40PG1200DHGLB-TRR IXA40PG1200DHGLB-TRR IXYS $0.00
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download Surface Mount RoHS Compliant Lead Free SMD/SMT 150°C Insulated Gate BIP Transistors 1 Standard 230W 63A 1.2kV 2.15V No 20V
CLA30MT1200NPZ CLA30MT1200NPZ IXYS $0.00
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Surface Mount RoHS Compliant TO-263-3 Single 50mA 33A TRIAC
CS20-16IO1-DIE COATSN CS20-16IO1-DIE COATSN IXYS $0.00
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download Active RoHS Compliant 3
CS19-08HO1S CS19-08HO1S IXYS $0.00
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Surface Mount yes 2 125°C -40°C RoHS Compliant 3 TO-263-3 unknown 1.59999g e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Silicon Controlled Rectifiers Not Qualified 1 SINGLE ANODE 19000A 800V 5mA 180 A 500V/us 28mA 1.5V 50mA 29A SCR 800V
IXBOD2-06 IXBOD2-06 IXYS $0.00
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download RoHS Compliant 2
IXBL60N360 IXBL60N360 IXYS $0.00
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Through Hole RoHS Compliant unknown 1.95 μs 417W 92A 3.6kV 3.4V
DMA90U1800LB DMA90U1800LB IXYS $0.00
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Surface Mount EAR99 RoHS Compliant Lead Free SMD/SMT 8541.10.00.80 175°C Bridge Rectifier Diodes 6 BRIDGE, 6 ELEMENTS BRIDGE RECTIFIER DIODE 1800V 90A 1.2V