Products
Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Number of Drivers | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Mode | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Output Voltage | Diode Element Material | Number of Elements | Configuration | Diode Type | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | On-State Current-Max | Repetitive Peak Off-state Voltage | Leakage Current (Max) | Non-Repetitive Pk On-state Cur | Critical Rate of Rise of Off-State Voltage-Min | Holding Current-Max | DC Gate Trigger Current-Max | DC Gate Trigger Voltage-Max | Max Surge Current | Element Configuration | Power Dissipation | Turn On Delay Time | Max Reverse Leakage Current | Threshold Voltage | Input | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Peak Non-Repetitive Surge Current | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage | Recovery Time | Forward Voltage-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Hold Current | Collector Emitter Voltage (VCEO) | RMS Current (Irms) | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Trigger Device Type | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Collector Emitter Saturation Voltage | Turn On Time | Turn Off Time-Nom (toff) | NTC Thermistor | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Repetitive Peak Reverse Voltage | RMS On-state Current-Max | Circuit Commutated Turn-off Time-Nom |
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IXFH230N10T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | R-PSFM-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | DRAIN | 650W | 650W Tc | 230A | SWITCHING | 0.0047Ohm | SILICON | N-Channel | 4.7m Ω @ 500mA, 10V | 4.5V @ 1mA | 15300pF @ 25V | 250nC @ 10V | 230A Tc | 100V | 500A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTK170N10P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2010 | Polar™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 714W | 715W Tc | 170A | SWITCHING | 0.009Ohm | 90 ns | SILICON | N-Channel | 9m Ω @ 500mA, 10V | 5V @ 250μA | 6000pF @ 25V | 198nC @ 10V | 50ns | 33 ns | 20V | 100V | 170A Tc | 350A | 2000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFH12N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2001 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | AVALANCHE RATED | TO-247-3 | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 380W | 3.5V | 380W Tc | 12A | SWITCHING | 0.9Ohm | 50 ns | SILICON | N-Channel | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 3080pF @ 25V | 56nC @ 10V | 34ns | 68 ns | 30V | 900V | 3.5 V | 12A Tc | 24A | 500 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFK120N30T | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 960W Tc | 120A | SWITCHING | 0.024Ohm | 300V | SILICON | N-Channel | 24m Ω @ 60A, 10V | 5V @ 4mA | 20000pF @ 25V | 265nC @ 10V | 120A Tc | 300V | 330A | 2500 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFK180N15P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Bulk | 2006 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | No SVHC | 11MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | 1 | DRAIN | Single | 830W | 5V | 830W Tc | 180A | SWITCHING | 150 ns | SILICON | N-Channel | 11m Ω @ 90A, 10V | 5V @ 4mA | 7000pF @ 25V | 240nC @ 10V | 32ns | 36 ns | 20V | 150V | 180A Tc | 4000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFK170N20P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.25kW | 1250W Tc | 170A | SWITCHING | 200V | SILICON | N-Channel | 14m Ω @ 500mA, 10V | 5V @ 1mA | 11400pF @ 25V | 185nC @ 10V | 20V | 170A Tc | 200V | 400A | 4000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFK100N10 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2000 | HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-264-3, TO-264AA | 12MOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | FET General Purpose Power | 1 | DRAIN | Single | 500W | 500W Tc | 100A | SWITCHING | 100 ns | SILICON | N-Channel | 12m Ω @ 75A, 10V | 4V @ 8mA | 9000pF @ 25V | 360nC @ 10V | 60ns | 60 ns | 20V | 100V | 100A Tc | 560A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFK40N90P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2011 | HiPerFET™, PolarP2™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-264-3, TO-264AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 960W | 960W Tc | 40A | SWITCHING | 0.21Ohm | 77 ns | SILICON | N-Channel | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 14000pF @ 25V | 230nC @ 10V | 50ns | 46 ns | 900V | 40A Tc | 80A | 1500 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFX50N50 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2002 | HiPerFET™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-247-3 | 100MOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | FET General Purpose Power | 1 | DRAIN | Single | 520W | 520W Tc | 50A | SWITCHING | 120 ns | SILICON | N-Channel | 100m Ω @ 25A, 10V | 4.5V @ 8mA | 9400pF @ 25V | 330nC @ 10V | 60ns | 45 ns | 20V | 500V | 50A Tc | 200A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXA20PG1200DHGLB-TRR | IXYS | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | SMD/SMT | Standard | 130W | 32A | 1.2kV | 2.1V | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXA12IF1200TC | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | yes | 2 | EAR99 | 150°C | -55°C | 16.05mm | RoHS Compliant | 3 | TO-268-3 | No SVHC | 5.1mm | 14mm | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 1 | TO-268AA | N-CHANNEL | Single | 85W | 350 ns | 85W | 20A | 1.2kV | 2.1V | POWER CONTROL | 1.8V | 110 ns | 350 ns | 20V | 6.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTQ52P10P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2008 | PolarP™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | unknown | 50MOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE TIN | NOT SPECIFIED | NOT SPECIFIED | 3 | Other Transistors | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 52A | SWITCHING | 38 ns | SILICON | P-Channel | 50m Ω @ 500mA, 10V | 4.5V @ 250μA | 2845pF @ 25V | 60nC @ 10V | 29ns | 22 ns | 20V | -100V | 52A Tc | 100V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFN520N075T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Chassis Mount, Screw | Tube | 2009 | GigaMOS™, HiPerFET™, TrenchT2™ | yes | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED, UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 200A | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | FET General Purpose Power | 75V | 1 | 480A | ISOLATED | Single | 940W | 48 ns | 940W Tc | 480A | SWITCHING | 80 ns | SILICON | N-Channel | 1.9m Ω @ 100A, 10V | 5V @ 8mA | 41000pF @ 25V | 545nC @ 10V | 36ns | 35 ns | 5V | 75V | 480A Tc | 3000 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CS20-25MOT1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | yes | 2 | 70°C | -10°C | RoHS Compliant | TO-268-3 | 8541.30.00.80 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE | TO-268AA | ANODE | 2500V | 250mA | 300mA | SCR | 2500V | 30A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXA20PG1200DHGLB | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | 9 | 150°C | -55°C | 25mm | RoHS Compliant | 9 | HIGH RELIABILITY, UL RECOGNIZED | SMD/SMT | 5.5mm | 23mm | DUAL | GULL WING | 9 | Insulated Gate BIP Transistors | 2 | ISOLATED | N-CHANNEL | Single | Standard | 130W | 32A | 1.2kV | 2.1V | POWER CONTROL | 110 ns | 350 ns | No | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DSI30-12AS | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | yes | 2 | EAR99 | 150°C | -40°C | RoHS Compliant | Lead Free | No | 3 | UL RECOGNIZED | TO-263-3 | AVALANCHE | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | Rectifier Diodes | SILICON | 1 | RECTIFIER DIODE | GENERAL PURPOSE | 1 | 1.45V | CATHODE | 300A | Single | 1.2kV | 30A | 1mA | 330A | 1.2kV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLA50E1200TC | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | yes | 2 | 150°C | -40°C | RoHS Compliant | HIGH RELIABILITY | TO-268 | 4.500005g | 8541.30.00.80 | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Silicon Controlled Rectifiers | Not Qualified | 1 | SINGLE | ANODE | 50000A | 1200V | 4mA | 595 A | 1000V/us | 100mA | 50mA | 1.6V | 75mA | 80A | SCR | 1200V | 79A | 200 μs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTQ52N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 400W | 400W Tc | 52A | SWITCHING | 0.066Ohm | 60 ns | SILICON | N-Channel | 66m Ω @ 26A, 10V | 5V @ 250μA | 3490pF @ 25V | 110nC @ 10V | 22ns | 20 ns | 20V | 300V | 52A Tc | 150A | 1000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXTQ36N30P | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Through Hole | Tube | 2006 | PolarHT™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-3P-3, SC-65-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | DRAIN | Single | 300W | 300W Tc | 36A | SWITCHING | 0.11Ohm | 97 ns | SILICON | N-Channel | 110m Ω @ 18A, 10V | 5.5V @ 250μA | 2250pF @ 25V | 70nC @ 10V | 30ns | 28 ns | 30V | 300V | 36A Tc | 90A | 1000 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXFX320N17T2 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2009 | GigaMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 247 | AVALANCHE RATED | TO-247-3 | 1 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 170V | 1 | SINGLE WITH BUILT-IN DIODE | 320A | DRAIN | 46 ns | 1670W Tc | 320A | SWITCHING | 0.0052Ohm | 115 ns | SILICON | N-Channel | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 45000pF @ 25V | 640nC @ 10V | 170ns | 230 ns | 320A Tc | 800A | 5000 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DPG30C300PC | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | yes | 3 | 2 | EAR99 | 175°C | -55°C | RoHS Compliant | Lead Free | No | FREEWHEELING DIODE, SNUBBER DIODE, LOW LEAKAGE CURRENT | TO-263 | 1.59999g | AVALANCHE | 8541.10.00.80 | Pure Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | Rectifier Diodes | SILICON | 2 | RECTIFIER DIODE | FAST SOFT RECOVERY | 1 | 150A | 1.51V | 240A | Common Cathode | 80μA | 300V | 15A | 240A | 35 ns | 90W | 35 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLA5E1200UC | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | 2 | 150°C | -40°C | RoHS Compliant | TO-252-3 | 8541.30.00.80 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Silicon Controlled Rectifiers | 1 | SINGLE | TO-252AA | ANODE | 5000A | 1200V | 54 A | 20mA | 1.9V | 30mA | 7.8A | SCR | 1200V | 150 μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLA60MT1200NTZ | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | 150°C | -40°C | RoHS Compliant | 60A | TO-268-3 | Single | 60mA | 66A | TRIAC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXA40PG1200DHGLB-TRR | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | RoHS Compliant | Lead Free | SMD/SMT | 150°C | Insulated Gate BIP Transistors | 1 | Standard | 230W | 63A | 1.2kV | 2.15V | No | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CLA30MT1200NPZ | IXYS | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | RoHS Compliant | TO-263-3 | Single | 50mA | 33A | TRIAC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CS20-16IO1-DIE COATSN | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Active | RoHS Compliant | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CS19-08HO1S | IXYS | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | yes | 2 | 125°C | -40°C | RoHS Compliant | 3 | TO-263-3 | unknown | 1.59999g | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Silicon Controlled Rectifiers | Not Qualified | 1 | SINGLE | ANODE | 19000A | 800V | 5mA | 180 A | 500V/us | 28mA | 1.5V | 50mA | 29A | SCR | 800V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBOD2-06 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | RoHS Compliant | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IXBL60N360 | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | RoHS Compliant | unknown | 1.95 μs | 417W | 92A | 3.6kV | 3.4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMA90U1800LB | IXYS | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | EAR99 | RoHS Compliant | Lead Free | SMD/SMT | 8541.10.00.80 | 175°C | Bridge Rectifier Diodes | 6 | BRIDGE, 6 ELEMENTS | BRIDGE RECTIFIER DIODE | 1800V | 90A | 1.2V |
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