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IXYS(3783)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Operating Temperature | Input Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Max Breakdown Voltage | Supplier Device Package | Reverse Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Transistor Application | Turn-Off Delay Time | Transistor Element Material | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | Gate-Emitter Voltage-Max | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Gate-Emitter Thr Voltage-Max | Fall Time-Max (tf) | Test Condition | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXYT30N65C3H1HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2014 | GenX3™, XPT™ | Active | 1 (Unlimited) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | 270W | 270W | Single | 120 ns | 60A | 650V | 2.7V | 2.35V | 2.7V @ 15V, 30A | PT | 400V, 30A, 10 Ω, 15V | 44nC | 118A | 21ns/75ns | 1mJ (on), 270μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXGT28N120BD1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Surface Mount | Bulk | 2009 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*28N120 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | COLLECTOR | N-CHANNEL | Single | 40 ns | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 63 ns | 3.5V @ 15V, 28A | 590 ns | PT | 20V | 1200V | 5V | 320ns | 960V, 28A, 5 Ω, 15V | 92nC | 150A | 30ns/210ns | 2.2mJ (off) | |||||||||||||||||||||||||||
| IXXH75N60C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | Through Hole | Tube | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | Standard | SINGLE | 3 | R-PSFM-T3 | 175°C | Insulated Gate BIP Transistors | Not Qualified | 750W | 750W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 150A | 600V | 2.3V | POWER CONTROL | SILICON | 105 ns | 2.3V @ 15V, 60A | 185 ns | PT | 20V | 5.5V | 400V, 60A, 5 Ω, 15V | 107nC | 300A | 35ns/90ns | 1.6mJ (on), 800μJ (off) | ||||||||||||||||||||||||||||||||||||||
| IXGR60N60C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2010 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 247 | ISOPLUS247™ | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | IXG*60N60 | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 170W | 1 | ISOLATED | N-CHANNEL | Single | 170W | 25 ns | 75A | 600V | 2.5V | POWER CONTROL | SILICON | 2.5V | 54 ns | 2.5V @ 15V, 40A | 198 ns | PT | 20V | 5V | 480V, 40A, 3 Ω, 15V | 115nC | 260A | 21ns/70ns | 800μJ (on), 450μJ (off) | ||||||||||||||||||||||||||||
| IXGH17N100 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | IXG*17N100 | 3 | Insulated Gate BIP Transistors | 150W | 150W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 34A | 1kV | 1kV | POWER CONTROL | SILICON | 300 ns | 3.5V @ 15V, 17A | 1900 ns | 20V | 1000V | 5V | 800V, 17A, 82 Ω, 15V | 100nC | 68A | 100ns/500ns | 3mJ (off) | |||||||||||||||||||||||||||||||||
| IXGT20N100 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2000 | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | 4.500005g | -55°C~150°C TJ | Standard | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXG*20N100 | 3 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 1kV | 1kV | POWER CONTROL | SILICON | 3V | 30 ns | 3V @ 15V, 20A | 700 ns | PT | 20V | 1000V | 5V | 700ns | 800V, 20A, 47 Ω, 15V | 73nC | 80A | 30ns/350ns | 3.5mJ (off) | |||||||||||||||||||||||||||
| IXYT20N120C3D1HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Tube | XPT™, GenX3™ | Active | 1 | 2 | RoHS Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | not_compliant | Surface Mount | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | SINGLE | GULL WING | YES | R-PSSO-G2 | Insulated Gate BIP Transistors | 230W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 230W | 29ns | POWER CONTROL | SILICON | 60 ns | 3.4V @ 15V, 20A | 220 ns | 20V | 1200V | 36A | 5V | 600V, 20A, 10 Ω, 15V | 53nC | 88A | 20ns/90ns | 1.3mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||||||||||
| FID60-06D | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 32 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Lead Free | 5 | HIGH RELIABILITY | i4-Pac™-5 | Through Hole | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 5 | Insulated Gate BIP Transistors | Not Qualified | 200W | 1 | ISOLATED | N-CHANNEL | Single | 200W | 50 ns | 70ns | 65A | 600V | 600V | POWER CONTROL | 300 ns | SILICON | 1.6V | 110 ns | 2V @ 15V, 30A | 330 ns | NPT | 20V | 300V, 30A, 22 Ω, 15V | 120nC | 1mJ (on), 1.4mJ (off) | |||||||||||||||||||||||||||||||
| IXGR24N120C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
8 Weeks | Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | ISOPLUS247™ | Through Hole | Standard | IXG*24N120 | 48A | 1.2kV | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGX64N60B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
30 Weeks | Through Hole | Tube | 2012 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 460W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 35ns | 64A | 600V | 1.8V | POWER CONTROL | SILICON | 64 ns | 1.8V @ 15V, 50A | 326 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 168nC | 400A | 25ns/138ns | 1.5mJ (on), 1mJ (off) | ||||||||||||||||||||||||||||||||
| IXGH30N120C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | -55°C~150°C TJ | Standard | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*30N120 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 250W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | COLLECTOR | N-CHANNEL | 70 ns | 48A | 1.2kV | 4.2V | POWER CONTROL | SILICON | 60 ns | 4.2V @ 15V, 24A | 415 ns | PT | 20V | 1200V | 5V | 600V, 24A, 5 Ω, 15V | 80nC | 115A | 18ns/106ns | 1.45mJ (on), 470μJ (off) | |||||||||||||||||||||||||||||
| IXGK64N60B3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-264-3, TO-264AA | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 460W | 1 | COLLECTOR | N-CHANNEL | Single | 460W | 35 ns | 400A | 600V | 600V | POWER CONTROL | SILICON | 600V | 64 ns | 1.8V @ 15V, 50A | 326 ns | PT | 20V | 5V | 480V, 50A, 3 Ω, 15V | 168nC | 25ns/138ns | 1.5mJ (on), 1mJ (off) | |||||||||||||||||||||||||||||
| IXYA8N250CHV | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | XPT™ | Active | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | Surface Mount | -55°C~175°C TJ | Standard | 280W | 5ns | 4V @ 15V, 8A | 2500V | 29A | 1250V, 8A, 15 Ω, 15V | 45nC | 70A | 11ns/180ns | 2.6mJ (on), 1.07mJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYH40N120B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 28 Weeks | Through Hole | Tube | 2012 | GenX3™, XPT™ | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | SINGLE | 3 | R-PSFM-T3 | 577W | 577W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 22 ns | 96A | 1.2kV | 2.9V | POWER CONTROL | 177 ns | SILICON | 84 ns | 2.9V @ 15V, 40A | 411 ns | 1200V | 600V, 40A, 10 Ω, 15V | 87nC | 200A | 22ns/177ns | 2.7mJ (on), 1.6mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXGH20N120 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2002 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*20N120 | 3 | R-PSFM-T3 | Not Qualified | 150W | 150W | 1 | COLLECTOR | N-CHANNEL | Single | 40A | 1.2kV | 1.2kV | MOTOR CONTROL | SILICON | 57 ns | 2.5V @ 15V, 20A | 1250 ns | PT | 1200V | 800V, 20A, 47 Ω, 15V | 63nC | 80A | 28ns/400ns | 6.5mJ (off) | ||||||||||||||||||||||||||||||||||||
| IXYH75N65C3D1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
28 Weeks | XPT™, GenX3™ | Active | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | Standard | 750W | 65ns | 2.3V @ 15V, 60A | PT | 650V | 175A | 400V, 60A, 3 Ω, 15V | 122nC | 360A | 26ns/93ns | 2mJ (on), 950μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH24N120IH | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | 6.500007g | Standard | IXG*24N120 | 1.2kV | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP20N120B3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | 10.66mm | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-220-3 | unknown | 16mm | 4.83mm | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | e3 | PURE TIN | NOT SPECIFIED | NOT SPECIFIED | IXG*20N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 180W | 180W | 1 | TO-220AB | COLLECTOR | N-CHANNEL | Single | 36A | 1.2kV | 3.1V | POWER CONTROL | SILICON | 61 ns | 3.1V @ 15V, 16A | 720 ns | PT | 20V | 1200V | 5V | 600V, 16A, 15 Ω, 15V | 51nC | 80A | 16ns/150ns | 920μJ (on), 560μJ (off) | ||||||||||||||||||||||||
| IXXA30N65C3HV | IXYS | $0.00 |
Min: 1 Mult: 1 |
24 Weeks | XPT™, GenX3™ | Active | 2 | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | Standard | e3 | Matte Tin (Sn) | 230W | 33ns | 2.2V @ 15V, 24A | 650V | 52A | 400V, 24A, 10 Ω, 15V | 37nC | 113A | 33ns/125ns | 500μJ (on), 450μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH10N100A | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | HIGH SPEED | TO-247-3 | Through Hole | Standard | SINGLE | IXG*10N100 | R-PSFM-T3 | 150°C | Insulated Gate BIP Transistors | Not Qualified | 100W | 100W | 1 | SINGLE | TO-247AD | COLLECTOR | N-CHANNEL | 20A | 1kV | 4V | POWER CONTROL | SILICON | 300 ns | 4V @ 15V, 10A | 1550 ns | 20V | 4 V | 1000V | 5V | ||||||||||||||||||||||||||||||||||||||||||
| IXGR55N120A3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | ULTRA FAST, LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AD | ISOLATED | N-CHANNEL | 200 ns | 70A | 1.2kV | 2.35V | POWER CONTROL | SILICON | 70 ns | 2.35V @ 15V, 55A | 1253 ns | PT | 20V | 1200V | 5V | 960V, 55A, 3 Ω, 15V | 185nC | 330A | 23ns/365ns | 5.1mJ (on), 13.3mJ (off) | |||||||||||||||||||||||||||
| IXGX72N60C3H1 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | LOW CONDUCTION LOSS | TO-247-3 | unknown | Through Hole | -55°C~150°C TJ | Standard | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | NOT SPECIFIED | IXG*72N60 | 3 | R-PSFM-T3 | Insulated Gate BIP Transistors | Not Qualified | 540W | 540W | 1 | SINGLE WITH BUILT-IN DIODE | COLLECTOR | N-CHANNEL | 27 ns | 140 ns | 75A | 600V | 2.5V | POWER CONTROL | 77 ns | SILICON | 62 ns | 2.5V @ 15V, 50A | 244 ns | PT | 20V | 5.5V | 110ns | 480V, 50A, 2 Ω, 15V | 174nC | 360A | 27ns/77ns | 1.03mJ (on), 480μJ (off) | ||||||||||||||||||||||||
| IXGH25N120 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e3 | Matte Tin (Sn) | 260 | 35 | 3 | Insulated Gate BIP Transistors | Not Qualified | 200W | 200W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 50A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 350 ns | 3V @ 15V, 25A | 1920 ns | 20V | 3 V | 1200V | 6V | 960V, 25A, 33 Ω, 15V | 130nC | 100A | 100ns/650ns | 11mJ (off) | |||||||||||||||||||||||||||||||
| IXBT42N170A | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount, Through Hole | Tube | 2010 | BIMOSFET™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | unknown | Surface Mount | -55°C~150°C TJ | Standard | e3 | PURE TIN | GULL WING | NOT SPECIFIED | NOT SPECIFIED | IXB*42N170 | 4 | R-PSSO-G2 | Insulated Gate BIP Transistors | Not Qualified | 357W | 357W | 1 | COLLECTOR | N-CHANNEL | Single | 1.7kV | 330 ns | 42A | 1.2kV | 1.7kV | MOTOR CONTROL | SILICON | 5.2V | 63 ns | 6V @ 15V, 21A | 420 ns | 20V | 1700V | 5.5V | 850V, 21A, 1 Ω, 15V | 188nC | 265A | 19ns/200ns | 3.43mJ (on), 430μJ (off) | |||||||||||||||||||||||||||
| IXGH30N120IH | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | Standard | IXG*30N120 | TO-247AD (IXGH) | 50A | 1.2kV | 1200V | 50A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH28N60A3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Tube | 2016 | GenX3™ | Active | TO-247-3 | compliant | Through Hole | -55°C~150°C TJ | Standard | 190W | 26ns | 1.4V @ 15V, 24A | PT | 600V | 75A | 480V, 24A, 10 Ω, 15V | 66nC | 170A | 18ns/300ns | 700μJ (on), 2.4mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGH22N140IH | IXYS | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | Standard | 1.4kV | 1400V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP15N120B | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2000 | HiPerFAST™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Through Hole | 2.299997g | -55°C~150°C TJ | Standard | NOT SPECIFIED | NOT SPECIFIED | IXG*15N120 | 3 | Insulated Gate BIP Transistors | Not Qualified | 150W | 150W | 1 | TO-220AB | N-CHANNEL | Single | 30A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 3.2V | 43 ns | 3.2V @ 15V, 15A | 660 ns | PT | 20V | 1200V | 5V | 960V, 15A, 10 Ω, 15V | 69nC | 60A | 25ns/180ns | 1.75mJ (off) | |||||||||||||||||||||||||||||||
| IXGH100N30C3 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 16.26mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | 21.46mm | 5.3mm | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | 460W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 460W | 75A | 300V | 300V | POWER CONTROL | SILICON | 1.53V | 61 ns | 1.85V @ 15V, 100A | 244 ns | PT | 200V, 50A, 2 Ω, 15V | 162nC | 500A | 23ns/105ns | 230μJ (on), 520μJ (off) | ||||||||||||||||||||||||||||||
| IXGH36N60B3D4 | IXYS | $0.00 |
Min: 1 Mult: 1 |
download | 30 Weeks | Through Hole | Tube | 2008 | GenX3™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOW CONDUCTION LOSS | TO-247-3 | Through Hole | 6.500007g | -55°C~150°C TJ | Standard | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | IXG*36N60 | 3 | Insulated Gate BIP Transistors | Not Qualified | 250W | 1 | TO-247AD | COLLECTOR | N-CHANNEL | Single | 60ns | 36A | 600V | 600V | POWER CONTROL | SILICON | 45 ns | 1.8V @ 15V, 30A | 350 ns | PT | 20V | 5V | 400V, 30A, 5 Ω, 15V | 80nC | 200A | 19ns/125ns | 540μJ (on), 800μJ (off) |